STPSC6H065DLF STMicroelectronics Schottky Diode (Other) In Stock
STPSC6H065DLF is a 650 V, 6 A silicon carbide (SiC) Schottky rectifier diode from STMicroelectronics featuring ultra-low forward voltage of 1.55 V max and zero reverse recovery charge for high-efficiency power conversion. The single cathode configuration in a PSSO-N4 package suits bridgeless PFC and DC-DC converter designs. Available from stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 5
- Lifecycle
- ACTIVE
- Datasheet
- STPSC6H065DLF Datasheet PDF
- Category
- Schottky Diode
- Price
- From $0.9450(MOQ 100)
- Temp Range
- -40.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STPSC6H065DLF?
- Silicon carbide (SiC) Schottky construction eliminates reverse recovery charge, enabling switching frequencies above 100 kHz without efficiency penalty
- 650 V blocking voltage with 1.55 V maximum forward voltage delivers superior efficiency in bridgeless PFC and boost converter stages
- Single-diode PSSO-N4 package with cathode case connection simplifies PCB layout and thermal management in high-voltage power supplies
What is STPSC6H065DLF used for?
STPSC6H065DLF is designed for high-efficiency power conversion stages including bridgeless power factor correction (PFC) circuits, hard- and soft-switched DC-DC converters, and solar inverter boost stages operating up to 650 V. Its SiC Schottky technology eliminates reverse recovery losses that plague silicon diodes at frequencies above 50 kHz, directly improving total system efficiency. Industrial SMPS, EV on-board chargers, and motor drive rectifier stages benefit from its combination of low forward drop and high-temperature operation capability.
What are the specifications of STPSC6H065DLF?
| Factory Lead Time | 19Weeks |
| YTEOL | 3.15 |
| Application | EFFICIENCY |
| Case Connection | CATHODE |
| Configuration | SINGLE |
| Diode Element Material | SILICON CARBIDE |
| Diode Type | RECTIFIER DIODE |
| Forward Voltage-Max (VF) | 1.55V |
| JESD-30 Code | S-PSSO-N4 |
| JESD-609 Code | e3 |
| Non-rep Pk Forward Current-Max | 58A |
| Number of Elements | 1 |
| Number of Phases | 1 |
| Output Current-Max | 6A |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Rep Pk Reverse Voltage-Max | 650V |
| Reverse Current-Max | 60 µA |
| Reverse Test Voltage | 650V |
| Surface Mount | YES |
| Technology | SCHOTTKY |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Position | SINGLE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.10.00.80 |
| Country of Origin | Mainland China |
Where can I find the STPSC6H065DLF datasheet?
STPSC6H065DLF Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STPSC6H065DLF?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the SiC construction of STPSC6H065DLF eliminate reverse recovery losses compared to silicon rectifiers?
Silicon carbide Schottky diodes have no minority-carrier injection, so the reverse recovery charge Qrr is effectively 0 nC across the full 25 °C to 175 °C junction temperature range. In contrast, silicon fast-recovery diodes can exhibit Qrr values of 50 nC to 500 nC at 650 V, causing significant switching losses at frequencies above 50 kHz. Eliminating Qrr allows STPSC6H065DLF to operate in PFC stages at 100 kHz to 200 kHz without the reverse recovery spike that normally requires larger gate resistors and snubbers.
What is the maximum forward voltage of STPSC6H065DLF and how does it affect conduction losses in a 6 A rectifier stage?
The maximum forward voltage VF is 1.55 V at 6 A and 25 °C. At full rated current of 6 A, conduction power dissipation is approximately 9.3 W, which is competitive with silicon ultra-fast diodes at this voltage class. The low VF directly reduces junction temperature rise and extends MTBF in continuous conduction mode boost stages carrying 4 A to 6 A average current.
Which power supply topologies are best suited to STPSC6H065DLF given its 650 V rating?
STPSC6H065DLF is optimized for 400 V DC bus applications typical of single-phase bridgeless PFC front-ends, AC-DC flyback converters with 230 VAC input, and interleaved boost PFC stages. The 650 V blocking voltage provides a safe margin of at least 50 V above the peak 400 V rail, accommodating line transients and resonant voltage spikes in LLC converters up to 3 kW.
How does STPSC6H065DLF compare to a standard silicon Schottky diode for a 650 V EV charger design?
At 650 V, silicon Schottky diodes are impractical because their leakage current rises sharply above 200 V, resulting in excessive reverse power loss at elevated temperatures. STPSC6H065DLF uses SiC technology that maintains reverse leakage below 10 µA at 650 V and 150 °C junction temperature, making it the preferred choice for on-board EV chargers and industrial AC-DC converters requiring both 650 V standoff and high switching frequency above 100 kHz.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.9886 | $98.86 |
| 250+ | $0.9822 | $245.55 |
| 500+ | $0.9758 | $487.90 |
| 3000+ | $0.9450 | $2835.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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