STPSC12065-Y STMicroelectronics Schottky Diode (Other) In Stock
STMicroelectronics STPSC12065-Y is an automotive-grade 650 V, 12 A silicon carbide (SiC) power Schottky diode in TO-220AC / D2PAK package with 1.30 V typical forward voltage and 175°C maximum junction temperature. AEC-Q101 qualified for automotive power conversion with zero reverse recovery charge. From $3.80, in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 2
- Lifecycle
- ACTIVE
- Datasheet
- STPSC12065-Y Datasheet PDF
- Category
- Schottky Diode
- Temp Range
- -40.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V blocking voltage and 12 A average forward current in a TO-220AC package, rated for 50 A non-repetitive peak surge current
- Silicon carbide (SiC) Schottky structure eliminates reverse recovery charge, enabling switching frequencies above 100 kHz with negligible switching losses
- AEC-Q101 automotive qualified with 175°C maximum junction temperature for reliable operation in underhood and harsh-environment automotive power modules
- 1.30 V typical and 1.45 V maximum forward voltage (VF) with cathode-case connection simplifies heatsinking in single-diode boost and PFC circuit topologies
Applications
The STPSC12065-Y is used in automotive on-board chargers (OBC), DC-DC converters, and power factor correction (PFC) stages in electric vehicle (EV) powertrains where 650 V SiC Schottky diodes with AEC-Q101 qualification are required. Its zero reverse recovery loss enables high-efficiency operation in bridge rectifiers and boost converters switching at 50-200 kHz, reducing heatsink size and improving overall system efficiency by 1-2% compared to silicon diodes. The 175°C junction temperature rating also suits industrial solar inverters, UPS systems, and motor drive power stages operating in elevated ambient temperature environments.
Specifications
| YTEOL | 6 |
| Application | POWER |
| Case Connection | CATHODE |
| Configuration | SINGLE |
| Diode Element Material | SILICON CARBIDE |
| Diode Type | RECTIFIER DIODE |
| Forward Voltage-Max (VF) | 1.45V |
| JEDEC-95 Code | TO-220AC |
| JESD-30 Code | R-PSFM-T2 |
| Non-rep Pk Forward Current-Max | 50A |
| Number of Elements | 1 |
| Number of Phases | 1 |
| Output Current-Max | 12A |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| Rep Pk Reverse Voltage-Max | 650V |
| Reverse Current-Max | 150 µA |
| Reverse Test Voltage | 650V |
| Surface Mount | NO |
| Technology | SCHOTTKY |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.10.00.80 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STPSC12065-Y:
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide, TO-220AC
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide, TO-220AC
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide
Frequently Asked Questions
Why choose a SiC Schottky diode like STPSC12065-Y over a silicon ultrafast diode in a 650 V boost PFC stage?
The STPSC12065-Y eliminates reverse recovery charge (Qrr = 0) thanks to its silicon carbide Schottky structure, whereas silicon ultrafast diodes typically exhibit Qrr of 50-200 nC at 12 A. This zero Qrr reduces switching losses in boost PFC converters operating at 65-200 kHz by up to 80%, lowering junction temperature rise and enabling smaller inductors and heatsinks compared to silicon diode alternatives.
What does AEC-Q101 qualification mean for STPSC12065-Y and which automotive applications benefit most from it?
AEC-Q101 qualification means the STPSC12065-Y has passed standardized automotive reliability stress tests including high-temperature reverse bias (HTRB) at 175°C, temperature cycling from -55°C to 175°C, and electrostatic discharge (ESD) testing exceeding 2 kV human body model. Automotive OBC systems, 48 V to 800 V DC-DC converters, and EV charging station power modules benefit most, as AEC-Q101 ensures the diode meets the zero-defect reliability targets mandated by Tier 1 automotive suppliers.
How does the cathode-to-case connection on STPSC12065-Y simplify thermal management in a boost converter design?
The STPSC12065-Y has its cathode connected to the TO-220AC metal tab, meaning the case is at the highest voltage rail potential (up to 650 V) when the diode is in circuit. This allows the cathode to be bolted directly to a bus-connected heatsink rail without an insulating pad, eliminating the approximately 0.2-0.5°C/W thermal resistance added by mica or Kapton insulators and improving heat dissipation for a 12 A diode dissipating 15-18 W in continuous operation.
What is the non-repetitive peak forward current of STPSC12065-Y, and how does this rating affect inrush protection design?
The STPSC12065-Y is rated for 50 A non-repetitive peak forward current (IFSM), which is approximately 4.2 times the 12 A average rating. In rectifier input stages, this 50 A surge tolerance allows the diode to survive the typical 20-40 A capacitor inrush current at turn-on without requiring series negative temperature coefficient (NTC) thermistors or soft-start circuits, simplifying the BOM and reducing component count in automotive 12 V and 48 V power distribution systems.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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