STP8NM50N STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP8NM50N is an N-channel MDmesh II Power MOSFET rated at 500 V and 5 A with 0.79 Ω (max) on-resistance and 140 mJ avalanche energy, available in TO-220AB and DPAK packages. Designed for efficient high-voltage switching in SMPS and motor drive applications. From $1.20 in stock worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP8NM50N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- MDmesh II superjunction technology delivers 500 V breakdown with 0.73 Ω typical on-resistance, offering superior figure-of-merit for high-voltage offline SMPS topologies
- 140 mJ avalanche energy rating (Eas) provides robust protection against voltage spikes in unclamped inductive switching scenarios up to 500 V
- Dual package availability in both TO-220AB (through-hole) and DPAK (SMD) enables flexible PCB layout for either convection-cooled or heatsink-mounted high-voltage designs
Applications
The STP8NM50N is optimized for flyback, forward, and half-bridge SMPS converters operating from 230 V AC mains, where its 500 V drain voltage and low on-resistance enable efficient power conversion at switching frequencies up to several hundred kHz. It is also well suited for electronic lamp ballasts, motor speed controllers, and industrial power supplies requiring high-voltage N-channel switching capability. The DPAK package variant supports compact adapter and charger PCB designs where board area and thermal performance are both constrained.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5.9 |
| Avalanche Energy Rating (Eas) | 140mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 0.79Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 45W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) - immersion |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What makes STP8NM50N suitable for 230 V AC offline power supply designs?
The STP8NM50N features a 500 V minimum drain-source breakdown voltage, which comfortably exceeds the 400 V DC bus voltage seen in rectified 230 V AC inputs. Combined with a typical on-resistance of 0.73 Ω and a 5 A continuous drain current rating, it delivers efficient switching in flyback and forward converter topologies without requiring voltage derating for transient spikes.
How does the MDmesh II technology in STP8NM50N improve efficiency compared to standard 500 V MOSFETs?
ST's MDmesh II superjunction technology achieves a significantly lower RDS(on) × Qg figure-of-merit than conventional planar 500 V MOSFETs of equivalent die size. The typical 0.73 Ω on-resistance at a 5 A drain current reduces conduction losses, while the optimized gate charge minimizes switching losses at frequencies from 50 kHz to 300 kHz, improving converter efficiency by 1 to 3 percentage points in typical SMPS designs.
When should a designer select the DPAK package of STP8NM50N over the TO-220AB for a compact charger design?
The DPAK (R-PSFM-T3) surface-mount package is preferred when PCB space is limited and reflow soldering is used in automated assembly for adapter or charger products. At 5 A and 500 V, the DPAK's thermal pad can dissipate sufficient heat to a copper poured area without requiring a separate clip-on heatsink, whereas the TO-220AB package is better suited to designs using external heatsinks for higher continuous power dissipation above 15 W.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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