STP80N10F7 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP80N10F7 is a single N-channel power MOSFET with 100 V breakdown voltage, 80 A drain current, and ultra-low 10 mΩ on-resistance in a leaded TO-220AB package with built-in body diode. Designed for high-current switching in motor drives, DC-DC converters, and battery management systems. From $0.80 in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP80N10F7 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.8300(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low 10 mΩ (max) drain-source on-resistance minimizes conduction losses in high-current switching stages
- 80 A maximum drain current rating supports demanding motor-drive and battery-switch applications
- 100 V breakdown voltage provides safe operating margin in 48 V and 60 V bus automotive and industrial power systems
- Built-in body diode enables synchronous rectification without an external freewheeling diode, reducing BOM
- TO-220AB through-hole package allows easy heatsinking and robust thermal management in high-power designs
Applications
The STP80N10F7 is a strong choice for brushed DC motor drives and electric-scooter power stages operating on 12 V to 48 V battery buses, where its 80 A current rating and 10 mΩ on-resistance keep junction temperatures well within limits during continuous high-torque operation. It is equally applicable in synchronous buck converters and battery-protection circuits for lithium-ion packs, where the built-in body diode supports bidirectional current paths. Industrial solenoid drivers and load switches that must sustain large surge currents without expensive external crowbar circuits also benefit from its rugged TO-220AB construction.
Specifications
| YTEOL | 0 |
| Additional Feature | ULTRA LOW-ON RESISTANCE |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 0.01Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 110W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain current and breakdown voltage does the STP80N10F7 support, and how do these specs fit a 48 V motor-drive system?
The STP80N10F7 is rated for 80 A maximum drain current and a minimum 100 V drain-source breakdown voltage. In a 48 V electric-scooter or industrial brushed-motor drive, the 100 V rating provides a safe 2x margin over the nominal bus voltage to absorb inductive kickback transients, while the 80 A current capacity comfortably handles peak stall currents without triggering thermal shutdown in a properly heatsinked TO-220AB configuration.
How does the 10 mΩ on-resistance of the STP80N10F7 impact power dissipation in a high-current switching converter?
With a maximum RDS(on) of 10 mΩ, the STP80N10F7 dissipates only 6.4 W of conduction loss at a continuous 80 A drain current (P = I² × RDS(on) = 80² × 0.01). This ultra-low resistance is critical in synchronous buck converters and battery switches where conduction losses dominate efficiency, allowing designers to meet 95%+ efficiency targets without oversizing the device or requiring forced-air cooling at moderate current levels.
Does the STP80N10F7 include a body diode, and how does this benefit synchronous rectifier or reverse-battery protection designs?
Yes. The STP80N10F7 has a built-in body diode as part of its single N-channel MOSFET structure. In synchronous buck converter designs, this diode provides a freewheeling path during dead-time intervals, eliminating the need for an external Schottky diode and reducing BOM cost. In battery-management systems, the body diode also enables reverse-polarity protection topologies where two MOSFETs are placed back-to-back to block current in either direction when the gate is off.
For a board-level assembly requiring easy heatsink attachment, why is the TO-220AB package of STP80N10F7 advantageous over SMD MOSFET packages?
The TO-220AB (R-PSFM-T3) package exposes a metal drain tab that can be bolted directly to an aluminum heatsink with thermal resistance as low as 1°C/W using a standard TO-220 clip or screw. SMD DPAK or D2PAK packages transfer heat primarily through the PCB copper, which typically yields thermal resistance of 5–15°C/W. In applications dissipating more than 10 W continuously, the TO-220AB's superior heatsinking path keeps junction temperature below the 175°C limit with a much smaller and cheaper external thermal solution.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8300 | $1.83 |
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