STP7LN80K5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STP7LN80K5 from STMicroelectronics is an 800V N-channel MDmesh K5 Power MOSFET rated at 5A with a typical on-resistance of 0.95 Ohm. It delivers 200mJ avalanche energy rating and an ultra-low feedback capacitance of 0.5pF in a TO-220 package. Available worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP7LN80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.7810(MOQ 500)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800V drain-source breakdown voltage with 200mJ avalanche energy rating for robust high-voltage switching reliability
- 0.95 Ohm typical on-resistance at 5A drain current minimizes conduction losses in power conversion stages
- Ultra-low 0.5pF feedback capacitance reduces gate drive losses and improves switching speed in resonant topologies
Applications
The STP7LN80K5 is designed for high-voltage power conversion circuits including flyback converters, LLC resonant converters, and offline switching power supplies operating from 400V DC bus rails. Its MDmesh K5 superjunction technology achieves low on-resistance for its 800V rating, making it competitive in energy-efficient industrial power supplies and solar micro-inverters. The TO-220 through-hole package simplifies thermal management with standard heatsink mounting in designs targeting 50W to 150W output power.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 200mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 1.15Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.5pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 85W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the STP7LN80K5 perform in a 400V bus flyback converter compared to a standard 800V MOSFET?
The STP7LN80K5 uses STMicroelectronics MDmesh K5 superjunction technology to achieve a typical 0.95 Ohm on-resistance at 800V, which is significantly lower than conventional planar 800V MOSFETs of the same current rating. In a 400V bus flyback running at 5A peak drain current, this lower on-resistance reduces conduction losses, improving converter efficiency by 1 to 2 percentage points in typical 50W to 100W designs.
What is the avalanche energy rating of the STP7LN80K5 and why does it matter for unclamped inductive switching?
The STP7LN80K5 is rated for 200mJ single-pulse avalanche energy (Eas), allowing it to safely absorb transient overvoltage spikes caused by transformer leakage inductance without avalanche breakdown failure. This 200mJ rating provides a comfortable margin in offline converters where snubber circuits may not fully clamp the drain voltage, reducing the risk of catastrophic device failure during load transients.
Which package does the STP7LN80K5 use, and how does that simplify thermal management in a 100W power supply?
The device uses a TO-220 through-hole package, which attaches directly to a standard aluminum heatsink using a single M3 screw and a thermal pad. In a 100W switching power supply with a 400V DC bus, the TO-220 case-to-heatsink thermal resistance path keeps junction temperature below 150°C even at ambient temperatures up to 70°C when using a heatsink with 5°C/W thermal resistance.
Can STP7LN80K5 replace an older 7N80 MOSFET in an existing 800V power supply design?
Yes, the STP7LN80K5 is a pin-compatible TO-220 800V N-channel MOSFET with 5A continuous drain current, matching the ratings of many legacy 7N80-type devices. Its improved 0.95 Ohm typical on-resistance and 0.5pF feedback capacitance are better than most older generation 800V MOSFETs, so it can be substituted as a drop-in replacement that also reduces switching losses without any circuit redesign.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 500+ | $1.0900 | $545.00 |
| 1000+ | $0.9121 | $912.10 |
| 2000+ | $0.8590 | $1718.00 |
| 4000+ | $0.8099 | $3239.52 |
| 8000+ | $0.7952 | $6361.20 |
| 16000+ | $0.7810 | $12495.20 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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