STP4N150 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STP4N150 is a single N-channel power MOSFET from STMicroelectronics rated at 1500 V drain-source breakdown voltage and 4 A continuous drain current with 7 Ω on-resistance in a TO-220AB package.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP4N150 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $2.0058(MOQ 3)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP4N150?
- 1500 V drain-source breakdown voltage enabling use in high-voltage offline power conversion and industrial motor drives
- Low gate charge design with built-in body diode, eliminating external freewheeling diode in bridge topologies
- 350 mJ avalanche energy rating (Eas) for robust single-pulse protection in inductive switching applications
What is STP4N150 used for?
STP4N150 is suited for high-voltage switching applications including offline switch-mode power supplies, industrial motor drives, and flyback converters operating from mains up to 1000 V AC. Its 1500 V breakdown rating provides adequate margin for surge events in line-powered equipment. The isolated TO-220AB package simplifies heat sinking on standard PCB designs without additional insulation hardware.
What are the specifications of STP4N150?
| Factory Lead Time | 13Weeks |
| YTEOL | 6.2 |
| Avalanche Energy Rating (Eas) | 350mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1500V |
| Drain Current-Max (ID) | 4A |
| Drain-source On Resistance-Max | 7Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 160W |
| Pulsed Drain Current-Max (IDM) | 12A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP4N150 datasheet?
STP4N150 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP4N150?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source breakdown voltage of STP4N150 and why does that matter for mains-powered designs?
STP4N150 is rated at 1500 V minimum drain-source breakdown (BVDSS). In offline power supplies powered from 230 V AC mains, the rectified bus can reach 325 V DC, and switching transients can add another 2–3× depending on leakage inductance. A 1500 V device provides a comfortable safety margin, reducing field failures from voltage spikes in flyback and forward converters.
How does the 350 mJ avalanche energy rating of STP4N150 protect inductive loads during switch-off?
When an inductive load is switched off, stored energy in the inductance must be dissipated. STP4N150's 350 mJ single-pulse avalanche energy rating (Eas) means it can absorb that energy internally without breakdown. For a 4 A drain current application, this covers most small motor and relay drive scenarios without requiring an external transient-suppression diode, simplifying the BOM.
What drain current and on-resistance should designers expect from STP4N150 in a resistive load application?
STP4N150 supports a maximum continuous drain current (ID) of 4 A with a drain-source on-resistance (RDS(on)-max) of 7 Ω. At 4 A, the conduction loss is approximately 112 mW per ohm — so 784 mW total — meaning the TO-220AB package must be heat-sinked appropriately. Designers targeting lower conduction losses may consider paralleling two devices.
Which package does STP4N150 use and what are its thermal and mechanical characteristics?
STP4N150 comes in a TO-220AB (JEDEC-95 code) through-hole package with an isolated tab, meaning the drain pad is electrically isolated from the metal tab. This allows direct mounting to a chassis or heat sink without an insulating washer in most designs. The 3-pin vertical outline fits standard TO-220 clip or screw mounting hardware, and it is RoHS-compliant with lead-free solder terminations.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3+ | $3.9099 | $11.73 |
| 4+ | $2.0654 | $8.26 |
| 8+ | $2.0356 | $16.28 |
| 16+ | $2.0058 | $32.09 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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