STP4N150 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

STP4N150 is a single N-channel power MOSFET from STMicroelectronics rated at 1500 V drain-source breakdown voltage and 4 A continuous drain current with 7 Ω on-resistance in a TO-220AB package.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STP4N150Transistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $2.0058(MOQ 3)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 1500 V drain-source breakdown voltage enabling use in high-voltage offline power conversion and industrial motor drives
  • Low gate charge design with built-in body diode, eliminating external freewheeling diode in bridge topologies
  • 350 mJ avalanche energy rating (Eas) for robust single-pulse protection in inductive switching applications

Applications

STP4N150 is suited for high-voltage switching applications including offline switch-mode power supplies, industrial motor drives, and flyback converters operating from mains up to 1000 V AC. Its 1500 V breakdown rating provides adequate margin for surge events in line-powered equipment. The isolated TO-220AB package simplifies heat sinking on standard PCB designs without additional insulation hardware.

Specifications

Factory Lead Time13Weeks
YTEOL6.2
Avalanche Energy Rating (Eas)350mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min1500V
Drain Current-Max (ID)4A
Drain-source On Resistance-Max7Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)160W
Pulsed Drain Current-Max (IDM)12A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMatte Tin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STP4N150 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the drain-source breakdown voltage of STP4N150 and why does that matter for mains-powered designs?

STP4N150 is rated at 1500 V minimum drain-source breakdown (BVDSS). In offline power supplies powered from 230 V AC mains, the rectified bus can reach 325 V DC, and switching transients can add another 2–3× depending on leakage inductance. A 1500 V device provides a comfortable safety margin, reducing field failures from voltage spikes in flyback and forward converters.

How does the 350 mJ avalanche energy rating of STP4N150 protect inductive loads during switch-off?

When an inductive load is switched off, stored energy in the inductance must be dissipated. STP4N150's 350 mJ single-pulse avalanche energy rating (Eas) means it can absorb that energy internally without breakdown. For a 4 A drain current application, this covers most small motor and relay drive scenarios without requiring an external transient-suppression diode, simplifying the BOM.

What drain current and on-resistance should designers expect from STP4N150 in a resistive load application?

STP4N150 supports a maximum continuous drain current (ID) of 4 A with a drain-source on-resistance (RDS(on)-max) of 7 Ω. At 4 A, the conduction loss is approximately 112 mW per ohm — so 784 mW total — meaning the TO-220AB package must be heat-sinked appropriately. Designers targeting lower conduction losses may consider paralleling two devices.

Which package does STP4N150 use and what are its thermal and mechanical characteristics?

STP4N150 comes in a TO-220AB (JEDEC-95 code) through-hole package with an isolated tab, meaning the drain pad is electrically isolated from the metal tab. This allows direct mounting to a chassis or heat sink without an insulating washer in most designs. The 3-pin vertical outline fits standard TO-220 clip or screw mounting hardware, and it is RoHS-compliant with lead-free solder terminations.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $2.0058
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
3+$3.9099$11.73
4+$2.0654$8.26
8+$2.0356$16.28
16+$2.0058$32.09
pcs
Unit price: $3.9099 · Total: $11.73

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy