STP4N150 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STP4N150 is a single N-channel power MOSFET from STMicroelectronics rated at 1500 V drain-source breakdown voltage and 4 A continuous drain current with 7 Ω on-resistance in a TO-220AB package.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP4N150 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $2.0058(MOQ 3)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1500 V drain-source breakdown voltage enabling use in high-voltage offline power conversion and industrial motor drives
- Low gate charge design with built-in body diode, eliminating external freewheeling diode in bridge topologies
- 350 mJ avalanche energy rating (Eas) for robust single-pulse protection in inductive switching applications
Applications
STP4N150 is suited for high-voltage switching applications including offline switch-mode power supplies, industrial motor drives, and flyback converters operating from mains up to 1000 V AC. Its 1500 V breakdown rating provides adequate margin for surge events in line-powered equipment. The isolated TO-220AB package simplifies heat sinking on standard PCB designs without additional insulation hardware.
Specifications
| Factory Lead Time | 13Weeks |
| YTEOL | 6.2 |
| Avalanche Energy Rating (Eas) | 350mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1500V |
| Drain Current-Max (ID) | 4A |
| Drain-source On Resistance-Max | 7Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 160W |
| Pulsed Drain Current-Max (IDM) | 12A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source breakdown voltage of STP4N150 and why does that matter for mains-powered designs?
STP4N150 is rated at 1500 V minimum drain-source breakdown (BVDSS). In offline power supplies powered from 230 V AC mains, the rectified bus can reach 325 V DC, and switching transients can add another 2–3× depending on leakage inductance. A 1500 V device provides a comfortable safety margin, reducing field failures from voltage spikes in flyback and forward converters.
How does the 350 mJ avalanche energy rating of STP4N150 protect inductive loads during switch-off?
When an inductive load is switched off, stored energy in the inductance must be dissipated. STP4N150's 350 mJ single-pulse avalanche energy rating (Eas) means it can absorb that energy internally without breakdown. For a 4 A drain current application, this covers most small motor and relay drive scenarios without requiring an external transient-suppression diode, simplifying the BOM.
What drain current and on-resistance should designers expect from STP4N150 in a resistive load application?
STP4N150 supports a maximum continuous drain current (ID) of 4 A with a drain-source on-resistance (RDS(on)-max) of 7 Ω. At 4 A, the conduction loss is approximately 112 mW per ohm — so 784 mW total — meaning the TO-220AB package must be heat-sinked appropriately. Designers targeting lower conduction losses may consider paralleling two devices.
Which package does STP4N150 use and what are its thermal and mechanical characteristics?
STP4N150 comes in a TO-220AB (JEDEC-95 code) through-hole package with an isolated tab, meaning the drain pad is electrically isolated from the metal tab. This allows direct mounting to a chassis or heat sink without an insulating washer in most designs. The 3-pin vertical outline fits standard TO-220 clip or screw mounting hardware, and it is RoHS-compliant with lead-free solder terminations.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3+ | $3.9099 | $11.73 |
| 4+ | $2.0654 | $8.26 |
| 8+ | $2.0356 | $16.28 |
| 16+ | $2.0058 | $32.09 |
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