STP40NF20 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STP40NF20 is an N-channel STripFET Power MOSFET rated at 200 V and 40 A with a low on-resistance of 0.045 Ω and low gate charge for high-efficiency switching. Available in D2PAK, TO-220, TO-220FP, and TO-247 packages from STMicroelectronics.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP40NF20 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.3824(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 200 V drain-source breakdown voltage with 40 A continuous drain current for high-power switching
- Ultra-low 0.045 Ω drain-source on-resistance minimizes conduction losses
- Low gate charge STripFET technology enables fast switching at high frequencies
- Avalanche energy rating of 230 mJ provides robust protection in unclamped inductive switching
- Available in D2PAK, TO-220, TO-220FP, and TO-247 package options for flexible thermal management
Applications
The STP40NF20 is well-suited for switching power supplies, motor drives, and industrial power converters where high-voltage, high-current handling is required. Its low gate charge and on-resistance make it ideal for synchronous rectification and DC-DC converter topologies operating at elevated switching frequencies. The device is commonly used in automotive auxiliary power systems, battery chargers, and server power stages.
Specifications
| Factory Lead Time | 13Weeks |
| YTEOL | 5.92 |
| Avalanche Energy Rating (Eas) | 230mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200V |
| Drain Current-Max (ID) | 40A |
| Drain-source On Resistance-Max | 0.045Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 160W |
| Pulsed Drain Current-Max (IDM) | 160A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum continuous drain current the STP40NF20 can handle?
The STP40NF20 supports a maximum continuous drain current (ID) of 40 A at rated conditions, with a drain-source breakdown voltage of 200 V, making it suitable for high-power switching applications such as motor drives and switching power supplies.
How does the STP40NF20's on-resistance affect power dissipation in a DC-DC converter?
With a maximum drain-source on-resistance of 0.045 Ω at gate drive conditions, conduction losses at 40 A are approximately 72 mW per milliohm-amp-squared, helping maintain efficiency above 90% in many switching converter designs operating at 12 V to 48 V bus rails.
Which package variants of the STP40NF20 are available for different thermal and board-space requirements?
The STP40NF20 is offered in four package options: D2PAK for surface-mount high-power applications, TO-220 and TO-220FP for through-hole designs with or without a mounting flange, and TO-247 for the highest thermal dissipation capability, all supporting junction temperatures up to 150°C.
What is the avalanche energy rating of the STP40NF20 and why does it matter?
The STP40NF20 has an avalanche energy rating (Eas) of 230 mJ, which indicates the device can safely absorb energy during unclamped inductive switching events without damage, providing robustness in motor control and relay-switching circuits where voltage spikes are common.
When would a designer choose the STP40NF20 over a 150 V rated MOSFET?
A designer would select the STP40NF20's 200 V rating over a 150 V device when the application involves bus voltages of 100 V to 120 V, requiring at least a 1.5× safety margin. Typical scenarios include 110 VAC rectified rails (approximately 155 V peak) or 48 V telecom systems with high transient spikes exceeding 150 V.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.7100 | $3.71 |
| 10+ | $3.0400 | $30.40 |
| 100+ | $1.8800 | $188.00 |
| 200+ | $1.3968 | $279.36 |
| 400+ | $1.3896 | $555.84 |
| 800+ | $1.3824 | $1105.92 |
In Stock · 24h Response · Worldwide Shipping
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