STP33N60M6 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP33N60M6 is an N-channel 600 V MDmesh M6 Power MOSFET with 25 A drain current and 105 mΩ typical on-resistance. It features superior switching performance in a TO-220 package. Available in stock worldwide with competitive pricing.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP33N60M6 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.9666(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP33N60M6?
- 600 V drain-source breakdown voltage with MDmesh M6 superjunction technology for reduced switching losses
- Ultra-low 105 mΩ typical RDS(on) enabling high efficiency in power conversion applications
- 25 A continuous drain current rating with 500 mJ avalanche energy capability for robust operation
What is STP33N60M6 used for?
The STP33N60M6 is well-suited for high-voltage switch-mode power supplies, PFC boost converters, and motor drive inverters. Its low RDS(on) of 105 mΩ and 600 V breakdown voltage make it ideal for industrial power adapters and EV battery chargers. The TO-220 package provides excellent thermal dissipation for demanding power conversion designs.
What are the specifications of STP33N60M6?
| Factory Lead Time | 14Weeks |
| Date Of Intro | 2018-07-26 |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 500mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 25A |
| Drain-source On Resistance-Max | 0.125Ω |
| FET Technology | SUPERJUNCTION MOSFET |
| Feedback Cap-Max (Crss) | 4.2pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 190W |
| Pulsed Drain Current-Max (IDM) | 78A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP33N60M6 datasheet?
STP33N60M6 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP33N60M6?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current the STP33N60M6 can handle continuously?
The STP33N60M6 supports a maximum continuous drain current (ID) of 25 A at 25°C, with a drain-source breakdown voltage of 600 V. This combination makes it highly suitable for power conversion circuits operating at high voltages.
How does the MDmesh M6 technology in STP33N60M6 improve switching efficiency?
MDmesh M6 superjunction technology reduces the figure of merit (RDS(on) × Qg) compared to standard MOSFETs, resulting in lower switching losses at 600 V. The typical RDS(on) is 105 mΩ and the gate threshold voltage is approximately 3 V to 5 V, enabling fast, efficient switching in PFC and resonant converter designs.
In which industrial applications is the STP33N60M6 most commonly used?
The STP33N60M6 is commonly used in switch-mode power supplies (SMPS), PFC boost converters operating at 400 V DC bus, motor drive inverters, and industrial battery chargers. Its 500 mJ avalanche energy rating and 25 A current capacity make it robust for demanding loads up to several kilowatts.
What is the avalanche energy rating of STP33N60M6 and why does it matter for circuit protection?
The STP33N60M6 has an avalanche energy rating (EAS) of 500 mJ, meaning it can safely absorb unclamped inductive switching energy without device failure. This is critical in motor drives and relay switching circuits where inductive spikes may exceed the 600 V drain-source voltage rating.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.8800 | $4.88 |
| 10+ | $3.3000 | $33.00 |
| 30+ | $3.1000 | $93.00 |
| 100+ | $2.5500 | $255.00 |
| 500+ | $2.2200 | $1110.00 |
| 1000+ | $1.9666 | $1966.60 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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