STP26NM60ND STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP26NM60ND is an N-channel power MOSFET in TO-220 package, rated 21 A and 600 V. It features ultra-low on-resistance of 0.175 Ω and integrated fast recovery body diode. Available from stock worldwide with competitive pricing.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP26NM60ND Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $3.1125(MOQ 1000)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 21 A continuous drain current with 600 V breakdown voltage for high-power switching
- Ultra-low RDS(on) of 0.175 Ω minimizes conduction losses in power conversion circuits
- Built-in fast recovery body diode enables reliable half-bridge and full-bridge topologies
Applications
The STP26NM60ND is suited for switch-mode power supplies, motor drive inverters, and PFC boost converters operating from rectified mains up to 600 V. Its low on-resistance and rugged avalanche rating of 100 mJ make it a reliable choice for industrial power modules. The TO-220 package allows direct heatsinking for high-dissipation applications requiring continuous 21 A operation.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 100mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 21A |
| Drain-source On Resistance-Max | 0.175Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 190W |
| Pulsed Drain Current-Max (IDM) | 84A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and voltage rating of the STP26NM60ND?
The STP26NM60ND is rated for 21 A continuous drain current and 600 V drain-source breakdown voltage, making it suitable for demanding power switching applications in mains-connected circuits. The 100 mJ avalanche energy rating further enhances its ruggedness under inductive switching conditions.
How does the STP26NM60ND's RDS(on) compare for switch-mode power supply efficiency?
With a maximum RDS(on) of 0.175 Ω, the STP26NM60ND exhibits relatively low conduction losses at its rated 21 A current, improving converter efficiency in flyback and forward topologies operating at 100 kHz or above. Lower RDS(on) directly reduces I²R heating in the TO-220 package at full load.
Which package does the STP26NM60ND use and what heatsinking options are available?
The STP26NM60ND uses the industry-standard TO-220AB (3-pin) package with a tab connected to the drain, allowing direct bolt-down mounting to standard TO-220 heatsinks. Thermal resistance junction-to-case enables operation at ambient temperatures up to 100°C with appropriate heatsink selection for 21 A load current.
In which industrial motor-drive designs can the STP26NM60ND replace higher-cost alternatives?
For 3-phase inverter bridges operating at 400 V AC input (equivalent to 560 V DC bus), the 600 V rating of STP26NM60ND provides the required 10% safety margin while the 21 A rating covers motor currents up to 15 A RMS with derating. This makes it a cost-effective drop-in for medium-power servo and pump drives.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1000+ | $3.1125 | $3112.50 |
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