STP24NM60N STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STP24NM60N is an N-channel power MOSFET from STMicroelectronics rated at 600 V and 17 A with a maximum on-resistance of 190 mΩ. Features TO-220 package with integrated body diode and 300 mJ avalanche energy rating. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP24NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.0222(MOQ 5)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP24NM60N?
- 600 V drain-source breakdown voltage and 17 A continuous drain current handle high-power switching up to hundreds of watts
- Low 190 mΩ maximum Rds(on) reduces conduction losses and heat dissipation in hard-switching topologies
- 300 mJ avalanche energy rating (Eas) provides robust tolerance to unclamped inductive switching events, improving reliability
What is STP24NM60N used for?
The STP24NM60N is ideal for switched-mode power supplies, motor drive circuits, and industrial inverters requiring 600 V blocking capability. Its low on-resistance and high avalanche energy rating make it a reliable choice for flyback and half-bridge converter topologies. The TO-220 package enables easy heatsinking in medium-power designs up to several hundred watts.
What are the specifications of STP24NM60N?
| Factory Lead Time | 14Weeks |
| YTEOL | 5.95 |
| Avalanche Energy Rating (Eas) | 300mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 17A |
| Drain-source On Resistance-Max | 0.19Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125W |
| Pulsed Drain Current-Max (IDM) | 68A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP24NM60N datasheet?
STP24NM60N Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP24NM60N?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Can the STP24NM60N handle inductive spikes in a flyback converter operating from a 400 V DC bus?
Yes. The STP24NM60N has a 600 V drain-source breakdown voltage and a 300 mJ avalanche energy rating (Eas), providing substantial margin above the 400 V bus for resonant and unclamped inductive spikes. At 17 A maximum drain current and 190 mΩ Rds(on), it sustains safe operation across typical flyback operating points with adequate headroom.
What gate drive voltage is needed to fully enhance the STP24NM60N and minimize its on-resistance?
The STP24NM60N is a standard-threshold N-channel MOSFET that reaches its specified 190 mΩ maximum Rds(on) at a Vgs of 10 V. A gate drive voltage between 10 V and 15 V is recommended for full enhancement, which is readily supplied by dedicated gate driver ICs commonly used in 600 V power-conversion stages.
How does the TO-220 package of STP24NM60N simplify thermal management in a 200 W power supply design?
The TO-220AB package features a large exposed metal tab directly connected to the drain, providing a low thermal resistance path to an external heatsink. For a 200 W supply with typical switching losses, attaching a 1–2 °C/W heatsink keeps junction temperature below 125 °C even at a 40 °C ambient, making the STP24NM60N a thermally practical choice compared to surface-mount alternatives.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $2.8200 | $14.10 |
| 10+ | $2.0100 | $20.10 |
| 25+ | $1.7200 | $43.00 |
| 50+ | $1.1173 | $55.86 |
| 150+ | $1.0697 | $160.46 |
| 250+ | $1.0222 | $255.55 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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