STP24N60M2 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP24N60M2 is an N-channel power MOSFET in TO-220 package rated at 600 V and 18 A maximum drain current with 0.19 Ω on-resistance. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP24N60M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.6800(MOQ 3)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V drain-source breakdown voltage for high-voltage power conversion
- 18 A maximum drain current with 0.19 Ω low on-resistance for efficient switching
- Single N-channel MOSFET with built-in body diode in compact TO-220AB package
Applications
The STP24N60M2 is well-suited for switched-mode power supplies, motor drives, and high-voltage DC-DC converters requiring reliable 600 V blocking capability. Its low on-resistance of 0.19 Ω minimizes conduction losses in bridge rectifier and inverter topologies. Industrial power adapters and solar inverters benefit from its 18 A current rating and 180 mJ avalanche energy rating.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 180mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 18A |
| Drain-source On Resistance-Max | 0.19Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 72A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and voltage rating of the STP24N60M2?
The STP24N60M2 supports a maximum drain current of 18 A and a drain-source breakdown voltage of at least 600 V, making it suitable for high-voltage switching applications in power supplies and motor drives operating from mains-level inputs.
How does the STP24N60M2's on-resistance affect efficiency in a 400 V DC bus converter?
With a maximum drain-source on-resistance of 0.19 Ω at rated gate drive, the STP24N60M2 produces low conduction losses even at 18 A, limiting I²R dissipation to under 62 W worst-case and helping maintain converter efficiency above 95% in typical designs.
What avalanche energy rating does the STP24N60M2 provide for unclamped inductive switching?
The STP24N60M2 is rated for an avalanche energy (Eas) of 180 mJ, giving designers confidence in unclamped inductive switching scenarios such as motor drives where load dump transients can momentarily exceed the 600 V blocking voltage.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3+ | $2.8600 | $8.58 |
| 10+ | $2.1500 | $21.50 |
| 50+ | $1.9900 | $99.50 |
| 500+ | $1.8400 | $920.00 |
| 1000+ | $1.7500 | $1750.00 |
| 2500+ | $1.6800 | $4200.00 |
In Stock · 24h Response · Worldwide Shipping
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