STP18N60M6Alternatives & Equivalent Parts
About STP18N60M6
STP18N60M6 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STP18N60M6Source | STP18N60M2 | STP18N65M5 |
|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Transistor Outline, Vertical | Transistor Outline, Vertical |
| Pin Count | 3 | 3 | 3 |
| Temperature Range | — | -55.0°C ~ 150.0°C | ~ 150.0°C |
| Price | $1.1020 | $0.8203 | $1.1832 |
| Stock | In Stock | In Stock | In Stock |
| Lifecycle | OBSOLETE | ACTIVE | ACTIVE |
| Electrical Parameters | |||
| YTEOL | 0 | 4 | 6 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Factory Lead Time | — | 14 Weeks | 14 Weeks |
| Avalanche Energy Rating (Eas) | — | 135 mJ | 210 mJ |
| Case Connection | — | DRAIN | DRAIN |
| Configuration | — | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | — | 600 V | 650 V |
| Drain Current-Max (ID) | — | 13 A | 15 A |
| Drain-source On Resistance-Max | — | 0.28 Ω | 0.22 Ω |
| FET Technology | — | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | — | TO-220AB | TO-220AB |
| JESD-30 Code | — | R-PSFM-T3 | R-PSFM-T3 |
| Number of Elements | — | 1 | 1 |
| Operating Mode | — | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | — | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | — | RECTANGULAR | RECTANGULAR |
| Package Style | — | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/Channel Type | — | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | — | 110 W | 110 W |
| Pulsed Drain Current-Max (IDM) | — | 52 A | 60 A |
| Surface Mount | — | NO | NO |
| Terminal Form | — | THROUGH-HOLE | THROUGH-HOLE |
| Terminal Position | — | SINGLE | SINGLE |
| Transistor Application | — | SWITCHING | SWITCHING |
| Transistor Element Material | — | SILICON | SILICON |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 2 alternatives for STP18N60M6 — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Why Look for Alternatives?
Finding alternatives for STP18N60M6 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STP18N60M6 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STP18N60M6?
Known equivalents for STP18N60M6 include STP18N60M2, STP18N65M5. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STP18N60M6?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STP18N60M6 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.