STP16NF06L STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP16NF06L is an N-channel MOSFET rated at 60 V and 16 A with a maximum on-resistance of 0.1 Ω in a standard TO-220 package. It features a built-in body diode and 127 mJ avalanche energy rating for rugged switching applications. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP16NF06L Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.7900(MOQ 100)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP16NF06L?
- 60 V, 16 A N-channel MOSFET with 0.1 Ω maximum R_DS(on), enabling low conduction losses in high-current switching circuits
- 127 mJ avalanche energy rating (Eas) provides robust protection against inductive kickback in motor-drive and relay-control designs
- TO-220AB package with drain-connected tab for easy heatsinking, supporting high-power applications without additional thermal interface complexity
What is STP16NF06L used for?
The STP16NF06L is widely used as a high-side or low-side switch in DC motor drivers, synchronous rectifiers, and solenoid or relay drivers operating from 12 V to 48 V supplies. Its low 0.1 Ω on-resistance minimizes I²R losses at 16 A load currents, and the TO-220 package allows direct mounting to a heatsink or chassis for efficient thermal management in power-supply and automotive-adjacent applications.
What are the specifications of STP16NF06L?
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 127mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 16A |
| Drain-source On Resistance-Max | 0.1Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 45W |
| Pulsed Drain Current-Max (IDM) | 64A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP16NF06L datasheet?
STP16NF06L Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP16NF06L?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the drain-source breakdown voltage and continuous drain current ratings of the STP16NF06L?
The STP16NF06L is rated for a minimum 60 V drain-source breakdown voltage and a maximum continuous drain current of 16 A at room temperature. The maximum drain-source on-resistance is 0.1 Ω, which keeps conduction losses below 25.6 W at full 16 A load — an important consideration for thermal budget in compact power stages.
For a 12 V brushed DC motor controller running up to 10 A, how does STP16NF06L's 0.1 Ω R_DS(on) affect efficiency?
At 10 A, the voltage drop across the 0.1 Ω R_DS(on) is approximately 1 V, resulting in 10 W of conduction loss in the MOSFET alone. For a 12 V supply this represents roughly 8% of input power, which is manageable in half-bridge or H-bridge motor drivers. Using proper gate drive to ensure V_GS reaches at least 10 V keeps R_DS(on) at its datasheet minimum, improving efficiency further.
How does the 127 mJ avalanche energy rating protect STP16NF06L in inductive load switching?
When switching inductive loads such as solenoids or relay coils, the stored energy E = 0.5 × L × I² can exceed the supply voltage and appear as a voltage spike at the drain. The STP16NF06L can absorb 127 mJ of this energy in a single avalanche event, preventing destructive breakdown. For a 100 µH inductor at 16 A peak current, the stored energy is approximately 12.8 mJ — well within the 127 mJ rating, providing a safety margin of 10×.
What thermal considerations apply when mounting STP16NF06L in a TO-220 package on a PCB heatsink?
The TO-220AB package has a drain-connected metal tab that can be bolted directly to a heatsink or chassis ground plane. With a typical junction-to-case thermal resistance of about 1.25 °C/W, dissipating 10 W raises junction temperature by only 12.5 °C above the case, allowing operation up to 150 °C junction in most industrial environments. An electrically isolating thermal pad rated for 60 V is required if the heatsink is not at drain potential.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.9600 | $96.00 |
| 250+ | $0.9400 | $235.00 |
| 500+ | $0.7900 | $395.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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