STP13NM60N STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STP13NM60N is an N-channel MDmesh II Power MOSFET rated at 600 V and 11 A with a 280 mΩ typical on-resistance, housed in a TO-220 through-hole package for robust thermal dissipation. Its superjunction technology enables high efficiency in flyback and PFC topologies. Available from STMicroelectronics with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP13NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.9188(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP13NM60N?
- N-channel 600 V / 11 A MDmesh II MOSFET with 280 mΩ typical RDS(on) for high-voltage power conversion efficiency
- 200 mJ avalanche energy rating (Eas) provides robust protection against inductive switching transients
- TO-220AB through-hole package with low 0.36 Ω maximum on-resistance simplifies thermal management with standard heatsinks
What is STP13NM60N used for?
STP13NM60N is designed for high-voltage offline power supplies, PFC boost stages, and flyback converters operating from rectified mains at 600 V. Its MDmesh II superjunction structure offers lower specific on-resistance than conventional MOSFETs, boosting efficiency in AC/DC adapters and industrial SMPS designs. The TO-220 package provides easy heatsinking for continuous 11 A operation in motor drives and lighting ballasts.
What are the specifications of STP13NM60N?
| Factory Lead Time | 14Weeks |
| YTEOL | 5.95 |
| Avalanche Energy Rating (Eas) | 200mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 11A |
| Drain-source On Resistance-Max | 0.36Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 90W |
| Pulsed Drain Current-Max (IDM) | 44A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP13NM60N datasheet?
STP13NM60N Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP13NM60N?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What breakdown voltage and continuous drain current does STP13NM60N support?
The STP13NM60N is rated for a 600 V minimum drain-source breakdown voltage and 11 A maximum continuous drain current (ID), making it suitable for offline power supplies, PFC stages, and flyback converters operating from 230 V AC mains after rectification.
How does the MDmesh II structure of STP13NM60N improve efficiency in a 600 V PFC stage?
The MDmesh II superjunction technology reduces the specific on-resistance of STP13NM60N to a typical 280 mΩ at 11 A, which is 2–3× lower than comparable non-superjunction 600 V MOSFETs. This cuts I²R conduction losses in a PFC boost stage, improving overall power supply efficiency above 90 % at full load.
What avalanche energy capability does STP13NM60N offer for inductive switching circuits?
STP13NM60N has a single-pulse avalanche energy rating (Eas) of 200 mJ, meaning it can absorb high inductive energy spikes without damage. This makes it reliable in unclamped inductive switching applications such as motor drives and flyback converters where parasitic inductance can generate voltage overshoots above the 600 V rail.
Is STP13NM60N a suitable long-term procurement option given its supply status?
STP13NM60N carries a YTEOL (years to end-of-life) value of approximately 5.95 years, indicating it remains in active production with a 14-week factory lead time. Designers can confidently adopt it for new board designs without near-term obsolescence risk, and standard TO-220AB footprints ensure easy second-source qualification if needed.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.9400 | $2.94 |
| 10+ | $2.8100 | $28.10 |
| 100+ | $2.5600 | $256.00 |
| 293+ | $0.9555 | $279.96 |
| 629+ | $0.9188 | $577.93 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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