STP13NM60N STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

STP13NM60N is an N-channel MDmesh II Power MOSFET rated at 600 V and 11 A with a 280 mΩ typical on-resistance, housed in a TO-220 through-hole package for robust thermal dissipation. Its superjunction technology enables high efficiency in flyback and PFC topologies. Available from STMicroelectronics with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STP13NM60NTransistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.9188(MOQ 1)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • N-channel 600 V / 11 A MDmesh II MOSFET with 280 mΩ typical RDS(on) for high-voltage power conversion efficiency
  • 200 mJ avalanche energy rating (Eas) provides robust protection against inductive switching transients
  • TO-220AB through-hole package with low 0.36 Ω maximum on-resistance simplifies thermal management with standard heatsinks

Applications

STP13NM60N is designed for high-voltage offline power supplies, PFC boost stages, and flyback converters operating from rectified mains at 600 V. Its MDmesh II superjunction structure offers lower specific on-resistance than conventional MOSFETs, boosting efficiency in AC/DC adapters and industrial SMPS designs. The TO-220 package provides easy heatsinking for continuous 11 A operation in motor drives and lighting ballasts.

Specifications

Factory Lead Time14Weeks
YTEOL5.95
Avalanche Energy Rating (Eas)200mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)11A
Drain-source On Resistance-Max0.36Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)90W
Pulsed Drain Current-Max (IDM)44A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMatte Tin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STP13NM60N Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What breakdown voltage and continuous drain current does STP13NM60N support?

The STP13NM60N is rated for a 600 V minimum drain-source breakdown voltage and 11 A maximum continuous drain current (ID), making it suitable for offline power supplies, PFC stages, and flyback converters operating from 230 V AC mains after rectification.

How does the MDmesh II structure of STP13NM60N improve efficiency in a 600 V PFC stage?

The MDmesh II superjunction technology reduces the specific on-resistance of STP13NM60N to a typical 280 mΩ at 11 A, which is 2–3× lower than comparable non-superjunction 600 V MOSFETs. This cuts I²R conduction losses in a PFC boost stage, improving overall power supply efficiency above 90 % at full load.

What avalanche energy capability does STP13NM60N offer for inductive switching circuits?

STP13NM60N has a single-pulse avalanche energy rating (Eas) of 200 mJ, meaning it can absorb high inductive energy spikes without damage. This makes it reliable in unclamped inductive switching applications such as motor drives and flyback converters where parasitic inductance can generate voltage overshoots above the 600 V rail.

Is STP13NM60N a suitable long-term procurement option given its supply status?

STP13NM60N carries a YTEOL (years to end-of-life) value of approximately 5.95 years, indicating it remains in active production with a 14-week factory lead time. Designers can confidently adopt it for new board designs without near-term obsolescence risk, and standard TO-220AB footprints ensure easy second-source qualification if needed.

Related Guides

Why Buy from FindMyChip

Authorized Source
Verified supply chain with full traceability & inspection
$
Competitive Pricing
Factory-direct from China distributors, low MOQ
Fast Shipping
DHL Express 3–5 days · FedEx/UPS 5–7 days worldwide
Quality Guaranteed
30-day replacement for defective parts, no questions asked

About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.9188
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$2.9400$2.94
10+$2.8100$28.10
100+$2.5600$256.00
293+$0.9555$279.96
629+$0.9188$577.93
pcs
Unit price: $2.9400 · Total: $2.94

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy