STP12NM50 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

The STP12NM50 is an N-channel power MOSFET rated at 500 V and 12 A in a TO-220 package, featuring 0.35 Ω on-resistance and 400 mJ avalanche energy rating for robust switching applications. Suitable for industrial motor drives and power supplies with worldwide stocking.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STP12NM50Transistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $1.4877(MOQ 1)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 500 V / 12 A N-channel MOSFET with 0.35 Ω max drain-source on-resistance for low conduction losses
  • 400 mJ avalanche energy rating (Eas) for high ruggedness in inductive switching applications
  • TO-220AB package with built-in body diode enabling simplified synchronous rectification circuit design

Applications

The STP12NM50 is designed for offline switching power supplies, motor speed controllers, and industrial relay drivers requiring 500 V blocking capability. Its avalanche-rated construction ensures reliability in inductive load environments such as solenoid drivers and buck converters. The TO-220AB package provides excellent thermal dissipation when mounted to a heatsink, supporting continuous drain currents up to 12 A.

Specifications

Factory Lead Time14Weeks
YTEOL5.95
Additional FeatureAVALANCHE RATED
Avalanche Energy Rating (Eas)400mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500V
Drain Current-Max (ID)12A
Drain-source On Resistance-Max0.35Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)110W
Pulsed Drain Current-Max (IDM)48A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STP12NM50 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the drain-source on-resistance of the STP12NM50 and how does it affect power dissipation at 12 A?

The STP12NM50 has a maximum drain-source on-resistance (RDS(on)) of 0.35 Ω at VGS = 10 V. At full 12 A drain current, conduction losses are approximately 50 W (I² × R = 144 × 0.35), so adequate heatsinking is required to stay within the junction temperature limit. Derating to 8 A reduces losses to about 22 W, significantly easing thermal management.

How does the 400 mJ avalanche energy rating of STP12NM50 protect inductive load circuits?

The STP12NM50 is avalanche rated to absorb 400 mJ of energy when the drain voltage exceeds 500 V during inductive turn-off transients. This built-in ruggedness allows the MOSFET to survive occasional unclamped inductive switching events without external snubbers in many motor drive designs, reducing BOM complexity while maintaining reliable 500 V operation.

In which industrial power supply topologies can the STP12NM50 replace a 450 V rated MOSFET?

The STP12NM50 at 500 V rating provides additional headroom versus 450 V devices in flyback, forward, and half-bridge converters operating from 230 VAC mains, where drain voltage spikes can reach 450–480 V. Replacing a 450 V MOSFET with STP12NM50 improves margin against voltage stress-induced failures without requiring a gate driver change, since VGS drive requirements remain at 10 V.

What package does the STP12NM50 use and what mounting considerations apply for thermal management?

The STP12NM50 uses the TO-220AB through-hole package with a metal tab exposed for heatsink attachment. Maximum junction temperature is 150°C, and thermal resistance junction-to-case is typically around 1.5°C/W, meaning at 50 W dissipation a heatsink keeping case temperature below 75°C is necessary to stay within limits. Insulating pads reduce but do not eliminate the need for adequate airflow.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $1.4877
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$3.2300$3.23
5+$3.0600$15.30
10+$1.8025$18.02
20+$1.6530$33.06
50+$1.5538$77.69
150+$1.4877$223.16
pcs
Unit price: $3.2300 · Total: $3.23

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy