STP12NM50 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STP12NM50 is an N-channel power MOSFET rated at 500 V and 12 A in a TO-220 package, featuring 0.35 Ω on-resistance and 400 mJ avalanche energy rating for robust switching applications. Suitable for industrial motor drives and power supplies with worldwide stocking.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP12NM50 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.4877(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP12NM50?
- 500 V / 12 A N-channel MOSFET with 0.35 Ω max drain-source on-resistance for low conduction losses
- 400 mJ avalanche energy rating (Eas) for high ruggedness in inductive switching applications
- TO-220AB package with built-in body diode enabling simplified synchronous rectification circuit design
What is STP12NM50 used for?
The STP12NM50 is designed for offline switching power supplies, motor speed controllers, and industrial relay drivers requiring 500 V blocking capability. Its avalanche-rated construction ensures reliability in inductive load environments such as solenoid drivers and buck converters. The TO-220AB package provides excellent thermal dissipation when mounted to a heatsink, supporting continuous drain currents up to 12 A.
What are the specifications of STP12NM50?
| Factory Lead Time | 14Weeks |
| YTEOL | 5.95 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 400mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 0.35Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 110W |
| Pulsed Drain Current-Max (IDM) | 48A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP12NM50 datasheet?
STP12NM50 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP12NM50?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source on-resistance of the STP12NM50 and how does it affect power dissipation at 12 A?
The STP12NM50 has a maximum drain-source on-resistance (RDS(on)) of 0.35 Ω at VGS = 10 V. At full 12 A drain current, conduction losses are approximately 50 W (I² × R = 144 × 0.35), so adequate heatsinking is required to stay within the junction temperature limit. Derating to 8 A reduces losses to about 22 W, significantly easing thermal management.
How does the 400 mJ avalanche energy rating of STP12NM50 protect inductive load circuits?
The STP12NM50 is avalanche rated to absorb 400 mJ of energy when the drain voltage exceeds 500 V during inductive turn-off transients. This built-in ruggedness allows the MOSFET to survive occasional unclamped inductive switching events without external snubbers in many motor drive designs, reducing BOM complexity while maintaining reliable 500 V operation.
In which industrial power supply topologies can the STP12NM50 replace a 450 V rated MOSFET?
The STP12NM50 at 500 V rating provides additional headroom versus 450 V devices in flyback, forward, and half-bridge converters operating from 230 VAC mains, where drain voltage spikes can reach 450–480 V. Replacing a 450 V MOSFET with STP12NM50 improves margin against voltage stress-induced failures without requiring a gate driver change, since VGS drive requirements remain at 10 V.
What package does the STP12NM50 use and what mounting considerations apply for thermal management?
The STP12NM50 uses the TO-220AB through-hole package with a metal tab exposed for heatsink attachment. Maximum junction temperature is 150°C, and thermal resistance junction-to-case is typically around 1.5°C/W, meaning at 50 W dissipation a heatsink keeping case temperature below 75°C is necessary to stay within limits. Insulating pads reduce but do not eliminate the need for adequate airflow.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2300 | $3.23 |
| 5+ | $3.0600 | $15.30 |
| 10+ | $1.8025 | $18.02 |
| 20+ | $1.6530 | $33.06 |
| 50+ | $1.5538 | $77.69 |
| 150+ | $1.4877 | $223.16 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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