STP12N65M2 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

STMicroelectronics STP12N65M2 is an N-channel MDmesh M2 Power MOSFET rated at 650 V and 8 A continuous drain current with 0.42 Ohm on-resistance in a TO-220 package. Ideal for flyback, PFC, and LLC resonant converters. Available from stock with worldwide shipping.

OBSOLETEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STP12N65M2Transistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
OBSOLETE
Category
MOSFET (N-Channel)
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650 V breakdown voltage with 0.42 Ohm typical Rds(on) for efficient high-voltage switching
  • MDmesh M2 technology reducing Qg and switching losses in resonant and hard-switching topologies
  • TO-220 package rated for 8 A continuous drain current with excellent thermal conductivity

Applications

The STP12N65M2 is widely deployed in AC/DC flyback converters, power factor correction boost stages, and LLC resonant converters operating from 85 V to 265 V AC mains input. Its 650 V rating and low 0.42 Ohm on-resistance make it an efficient choice for 50 W to 200 W power supply designs in home appliances, industrial equipment, and lighting drivers.

Specifications

YTEOL0
Peak Reflow Temperature (Cel)NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STP12N65M2 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of STP12N65M2 for power supply designs?

The STP12N65M2 is rated at 650 V drain-source breakdown voltage and 8 A continuous drain current with a typical on-resistance of 0.42 Ohm, making it suitable for offline flyback and PFC converters up to 200 W operating from universal 85 V to 265 V AC mains.

How does the MDmesh M2 technology in STP12N65M2 improve switching efficiency versus standard MOSFETs?

MDmesh M2 technology reduces gate charge Qg and output capacitance Coss compared to standard planar MOSFETs, directly lowering switching losses at 50 kHz to 200 kHz frequencies. This enables the STP12N65M2 to achieve higher efficiency in LLC resonant and PFC converters while maintaining the 650 V, 8 A rating.

When is STP12N65M2 preferable to higher-rated 900 V MOSFETs in offline converter designs?

For 85 V to 265 V AC universal input designs, 650 V MOSFETs like STP12N65M2 provide lower Rds(on) of 0.42 Ohm and reduced conduction losses compared to 900 V alternatives at the same die size. This makes STP12N65M2 more cost-effective for 50 W to 200 W offline flyback or PFC converters where 650 V margin is sufficient.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
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In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy