STP11NM80Alternatives & Equivalent Parts

About STP11NM80

STP11NM80 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTP11NM80SourceSTP11NM60STP11NM60ND
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count333
Temperature Range~ 150.0°C~ 150.0°C~ 150.0°C
Price$2.0086$1.0750$1.5900
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEOBSOLETE
Electrical Parameters
YTEOL65.950
Additional FeatureULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)400 mJ350 mJ200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min800 V600 V600 V
Drain Current-Max (ID)11 A11 A10 A
Drain-source On Resistance-Max0.4 Ω0.45 Ω0.45 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220ABTO-220ABTO-220AB
JESD-30 CodeR-PSFM-T3R-PSFM-T3R-PSFM-T3
JESD-609 Codee3e3
Number of Elements111
Operating ModeENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULAR
Package StyleFLANGE MOUNTFLANGE MOUNTFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Polarity/Channel TypeN-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)205 W110 W25 W
Pulsed Drain Current-Max (IDM)44 A44 A40 A
Qualification StatusNot QualifiedNot QualifiedNot Qualified
Surface MountNONONO
Terminal FinishMatte Tin (Sn)Matte Tin (Sn)
Terminal FormTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLE
Terminal PositionSINGLESINGLESINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Transistor ApplicationSWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICONSILICON
Factory Lead Time14 Weeks
Date Of Intro1980-01-04

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for STP11NM80 — response within 24 hours.

Quick Links

STP11NM60by STMicroelectronics

Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

STP11NM60NDby STMicroelectronics

Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Why Look for Alternatives?

Finding alternatives for STP11NM80 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STP11NM80 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STP11NM80?

Known equivalents for STP11NM80 include STP11NM60, STP11NM60ND. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STP11NM80?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STP11NM80 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.