STP10N60M2 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STP10N60M2 is an N-channel MOSFET from STMicroelectronics rated at 600 V breakdown voltage and 7.5 A drain current, with a maximum on-resistance of 0.6 Ω and 110 mJ avalanche energy rating in a TO-220 3-pin package. It integrates a built-in body diode and is suited for high-efficiency switching power conversion. Available from global distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP10N60M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.5019(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP10N60M2?
- 600 V minimum drain-source breakdown voltage enables safe operation in off-line power supplies and motor drive circuits
- Low 0.6 Ω maximum on-resistance at 7.5 A drain current reduces conduction losses in hard-switching topologies
- 110 mJ avalanche energy rating (Eas) with integrated body diode provides robust protection against inductive voltage spikes
What is STP10N60M2 used for?
The STP10N60M2 is commonly used in flyback converters, boost PFC stages, and resonant LLC power supplies operating from 85 V to 265 V AC mains, where its 600 V rating provides sufficient margin against line transients. It also suits motor drive inverters and electronic ballasts for lighting where rugged avalanche energy handling at 7.5 A drain current is required.
What are the specifications of STP10N60M2?
| Factory Lead Time | 14Weeks |
| YTEOL | 5.9 |
| Avalanche Energy Rating (Eas) | 110mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 7.5A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.84pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 85W |
| Pulsed Drain Current-Max (IDM) | 30A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP10N60M2 datasheet?
STP10N60M2 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP10N60M2?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain-source breakdown voltage and continuous drain current does the STP10N60M2 support?
The STP10N60M2 is rated for a minimum 600 V drain-source breakdown voltage and a maximum continuous drain current of 7.5 A. These ratings make it suitable for off-line switching power supplies operating from 85 V to 265 V AC mains, where the MOSFET must withstand high-voltage transients while conducting load currents in the single-digit ampere range.
How does the 0.6 Ω on-resistance of STP10N60M2 affect efficiency in a flyback converter design?
With a maximum RDS(on) of 0.6 Ω at 7.5 A, the STP10N60M2 dissipates at most 33.75 mW per ampere squared during conduction. In a 50 W flyback converter with typical 3 A peak switch current, conduction loss remains below 5.4 W, keeping efficiency above 90% at full load when combined with low switching losses from the 0.84 pF feedback capacitance.
What is the significance of the 110 mJ avalanche energy rating for motor drive applications?
The 110 mJ avalanche energy rating (Eas) means the STP10N60M2 can safely absorb inductive kick energy when switching off motor windings or transformer primaries. In a 400 V DC bus motor drive, this margin allows the MOSFET to survive repeated unclamped inductive switching events without requiring an external TVS diode, simplifying the gate drive circuit and reducing BOM cost.
Which package does the STP10N60M2 use and how does it simplify heatsinking in a power supply?
The STP10N60M2 is housed in a TO-220 3-pin through-hole package with the drain connected to the exposed metal tab, allowing direct bolt-down mounting to a heatsink or chassis. This standard footprint supports thermal interface materials rated for over 200°C and fits standard TO-220 clip heatsinks, making thermal management straightforward in enclosed SMPS designs dissipating up to 25 W.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5000 | $1.50 |
| 25+ | $0.6000 | $15.00 |
| 100+ | $0.5550 | $55.50 |
| 8000+ | $0.5163 | $4130.40 |
| 16000+ | $0.5069 | $8110.56 |
| 32000+ | $0.5019 | $16060.48 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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