STP10N60M2 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

The STP10N60M2 is an N-channel MOSFET from STMicroelectronics rated at 600 V breakdown voltage and 7.5 A drain current, with a maximum on-resistance of 0.6 Ω and 110 mJ avalanche energy rating in a TO-220 3-pin package. It integrates a built-in body diode and is suited for high-efficiency switching power conversion. Available from global distributors with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STP10N60M2Transistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.5019(MOQ 1)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600 V minimum drain-source breakdown voltage enables safe operation in off-line power supplies and motor drive circuits
  • Low 0.6 Ω maximum on-resistance at 7.5 A drain current reduces conduction losses in hard-switching topologies
  • 110 mJ avalanche energy rating (Eas) with integrated body diode provides robust protection against inductive voltage spikes

Applications

The STP10N60M2 is commonly used in flyback converters, boost PFC stages, and resonant LLC power supplies operating from 85 V to 265 V AC mains, where its 600 V rating provides sufficient margin against line transients. It also suits motor drive inverters and electronic ballasts for lighting where rugged avalanche energy handling at 7.5 A drain current is required.

Specifications

Factory Lead Time14Weeks
YTEOL5.9
Avalanche Energy Rating (Eas)110mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)7.5A
Drain-source On Resistance-Max0.6Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)0.84pF
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)85W
Pulsed Drain Current-Max (IDM)30A
Surface MountNO
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STP10N60M2 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What drain-source breakdown voltage and continuous drain current does the STP10N60M2 support?

The STP10N60M2 is rated for a minimum 600 V drain-source breakdown voltage and a maximum continuous drain current of 7.5 A. These ratings make it suitable for off-line switching power supplies operating from 85 V to 265 V AC mains, where the MOSFET must withstand high-voltage transients while conducting load currents in the single-digit ampere range.

How does the 0.6 Ω on-resistance of STP10N60M2 affect efficiency in a flyback converter design?

With a maximum RDS(on) of 0.6 Ω at 7.5 A, the STP10N60M2 dissipates at most 33.75 mW per ampere squared during conduction. In a 50 W flyback converter with typical 3 A peak switch current, conduction loss remains below 5.4 W, keeping efficiency above 90% at full load when combined with low switching losses from the 0.84 pF feedback capacitance.

What is the significance of the 110 mJ avalanche energy rating for motor drive applications?

The 110 mJ avalanche energy rating (Eas) means the STP10N60M2 can safely absorb inductive kick energy when switching off motor windings or transformer primaries. In a 400 V DC bus motor drive, this margin allows the MOSFET to survive repeated unclamped inductive switching events without requiring an external TVS diode, simplifying the gate drive circuit and reducing BOM cost.

Which package does the STP10N60M2 use and how does it simplify heatsinking in a power supply?

The STP10N60M2 is housed in a TO-220 3-pin through-hole package with the drain connected to the exposed metal tab, allowing direct bolt-down mounting to a heatsink or chassis. This standard footprint supports thermal interface materials rated for over 200°C and fits standard TO-220 clip heatsinks, making thermal management straightforward in enclosed SMPS designs dissipating up to 25 W.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.5019
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$1.5000$1.50
25+$0.6000$15.00
100+$0.5550$55.50
8000+$0.5163$4130.40
16000+$0.5069$8110.56
32000+$0.5019$16060.48
pcs
Unit price: $1.5000 · Total: $1.50

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy