STL8N10F7Alternatives & Equivalent Parts
About STL8N10F7
STL8N10F7 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STL8N10F7Source | STL260N4LF7 | STL220N6F7 | P6KE15CA | BTB16-600SWRG | BTB16-800BRG | NSR0340HT1G | STL8N10LF3 |
|---|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | HY Electronic Corp | STMicroelectronics | STMicroelectronics | ON Semiconductor | STMicroelectronics |
| Package Type | Other | Other | Other | Other | Transistor Outline, Vertical | Transistor Outline, Vertical | Small Outline Diode | Other |
| Pin Count | 7 | 9 | 9 | 2 | 3 | 3 | 2 | 13 |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 175.0°C | -55.0°C ~ | -55.0°C ~ 150.0°C | -40.0°C ~ 125.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 150.0°C | ~ 175.0°C |
| Price | $0.3249 | $1.2030 | $0.9643 | $0.0043 | $0.3106 | $0.3600 | $0.0271 | $0.6084 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | CONTACT MANUFACTURER | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | ||||||||
| Factory Lead Time | 13 Weeks | 26 Weeks | — | — | 15 Weeks | 15 Weeks | — | — |
| YTEOL | 5.85 | 6 | 5.6 | — | 6 | 6 | 6 | 5.85 |
| Case Connection | DRAIN | DRAIN | DRAIN | ISOLATED | MAIN TERMINAL 2 | MAIN TERMINAL 2 | — | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | 40 V | 60 V | — | — | — | — | 100 V |
| Drain Current-Max (ID) | 35 A | 120 A | 120 A | — | — | — | — | 20 A |
| Drain-source On Resistance-Max | 0.02 Ω | 0.0014 Ω | 0.0014 Ω | — | — | — | — | 0.05 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | — | — | — | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 25 pF | 170 pF | — | — | — | — | — | — |
| JESD-30 Code | R-PDSO-F5 | R-PDSO-F8 | R-PDSO-F5 | O-PALF-W2 | R-PSFM-T3 | R-PSFM-T3 | R-PDSO-G2 | R-PDSO-F5 |
| Number of Elements | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | — | — | — | — | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | LONG FORM | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | N-CHANNEL | — | — | — | — | N-CHANNEL |
| Power Dissipation-Max (Abs) | 50 W | 188 W | — | — | — | — | — | 70 W |
| Pulsed Drain Current-Max (IDM) | 140 A | 480 A | 480 A | — | — | — | — | 31.2 A |
| Surface Mount | YES | YES | YES | NO | NO | NO | YES | YES |
| Terminal Form | FLAT | FLAT | FLAT | WIRE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | FLAT |
| Terminal Position | DUAL | DUAL | DUAL | AXIAL | SINGLE | SINGLE | DUAL | DUAL |
| Transistor Application | SWITCHING | SWITCHING | SWITCHING | — | — | — | — | SWITCHING |
| Transistor Element Material | SILICON | SILICON | SILICON | — | — | — | — | SILICON |
| Avalanche Energy Rating (Eas) | — | — | 900 mJ | — | — | — | — | 190 mJ |
| JESD-609 Code | — | — | e3 | — | e3 | e3 | e3 | e3 |
| Peak Reflow Temperature (Cel) | — | — | 260 | — | NOT SPECIFIED | — | 260 | 260 |
| Terminal Finish | — | — | Matte Tin (Sn) - annealed | — | Matte Tin (Sn) - annealed | Matte Tin (Sn) | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed |
| Additional Feature | — | — | — | EXCELLENT CLAMPING CAPABILITY, PRSM-MIN | — | — | — | AVALANCHE RATED |
| Breakdown Voltage-Max | — | — | — | 15.8 V | — | — | — | — |
| Breakdown Voltage-Min | — | — | — | 14.3 V | — | — | — | — |
| Breakdown Voltage-Nom | — | — | — | 15.05 V | — | — | — | — |
| Clamping Voltage-Max | — | — | — | 21.2 V | — | — | — | — |
| Diode Element Material | — | — | — | SILICON | — | — | SILICON | — |
| Diode Type | — | — | — | TRANS VOLTAGE SUPPRESSOR DIODE | — | — | RECTIFIER DIODE | — |
| JEDEC-95 Code | — | — | — | DO-15 | TO-220AB | TO-220AB | — | — |
| Non-rep Peak Rev Power Dis-Max | — | — | — | 600 W | — | — | — | — |
| Polarity | — | — | — | BIDIRECTIONAL | — | — | — | — |
| Power Dissipation-Max | — | — | — | 5 W | — | — | 0.16 W | — |
| Rep Pk Reverse Voltage-Max | — | — | — | 12.8 V | — | — | 40 V | — |
| Technology | — | — | — | AVALANCHE | — | — | SCHOTTKY | — |
| Critical Rate of Rise of Off-State Voltage-Min | — | — | — | — | 40 V/us | 400 V/us | — | — |
| DC Gate Trigger Current-Max | — | — | — | — | 10 mA | 50 mA | — | — |
| DC Gate Trigger Voltage-Max | — | — | — | — | 1.3 V | 1.3 V | — | — |
| Holding Current-Max | — | — | — | — | 15 mA | 50 mA | — | — |
| Leakage Current-Max | — | — | — | — | 2 mA | 2 mA | — | — |
| Qualification Status | — | — | — | — | Not Qualified | Not Qualified | Not Qualified | — |
| RMS On-state Current-Max | — | — | — | — | 16 A | 16 A | — | — |
| Repetitive Peak Off-state Voltage | — | — | — | — | 600 V | 800 V | — | — |
| Time@Peak Reflow Temperature-Max (s) | — | — | — | — | NOT SPECIFIED | — | 30 | — |
| Trigger Device Type | — | — | — | — | 4 QUADRANT LOGIC LEVEL TRIAC | 4 QUADRANT LOGIC LEVEL TRIAC | — | — |
| Critical Rate of Rise of Commutation Voltage-Min | — | — | — | — | — | 10 V/us | — | — |
| Pbfree Code | — | — | — | — | — | — | Yes | — |
| Manufacturer Package Code | — | — | — | — | — | — | 477-02 | — |
| Application | — | — | — | — | — | — | GENERAL PURPOSE | — |
| Forward Voltage-Max (VF) | — | — | — | — | — | — | 0.59 V | — |
| Non-rep Pk Forward Current-Max | — | — | — | — | — | — | 1 A | — |
| Number of Phases | — | — | — | — | — | — | 1 | — |
| Output Current-Max | — | — | — | — | — | — | 0.25 A | — |
| Reverse Current-Max | — | — | — | — | — | — | 6 µA | — |
| Reverse Recovery Time-Max | — | — | — | — | — | — | 0.005 µs | — |
| Reverse Test Voltage | — | — | — | — | — | — | 40 V | — |
| Reference Standard | — | — | — | — | — | — | — | AEC-Q101 |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 7 alternatives for STL8N10F7 — response within 24 hours.
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Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Why Look for Alternatives?
Finding alternatives for STL8N10F7 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STL8N10F7 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STL8N10F7?
Known equivalents for STL8N10F7 include STL260N4LF7, STL220N6F7, P6KE15CA. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STL8N10F7?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STL8N10F7 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.