STL8N10F7Alternatives & Equivalent Parts

About STL8N10F7

STL8N10F7 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTL8N10F7SourceSTL260N4LF7STL220N6F7P6KE15CABTB16-600SWRGBTB16-800BRGNSR0340HT1GSTL8N10LF3
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsHY Electronic CorpSTMicroelectronicsSTMicroelectronicsON SemiconductorSTMicroelectronics
Package TypeOtherOtherOtherOtherTransistor Outline, VerticalTransistor Outline, VerticalSmall Outline DiodeOther
Pin Count799233213
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 175.0°C-55.0°C ~-55.0°C ~ 150.0°C-40.0°C ~ 125.0°C-40.0°C ~ 125.0°C-55.0°C ~ 150.0°C~ 175.0°C
Price$0.3249$1.2030$0.9643$0.0043$0.3106$0.3600$0.0271$0.6084
StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVECONTACT MANUFACTURERACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Factory Lead Time13 Weeks26 Weeks15 Weeks15 Weeks
YTEOL5.8565.66665.85
Case ConnectionDRAINDRAINDRAINISOLATEDMAIN TERMINAL 2MAIN TERMINAL 2DRAIN
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLESINGLESINGLESINGLESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V40 V60 V100 V
Drain Current-Max (ID)35 A120 A120 A20 A
Drain-source On Resistance-Max0.02 Ω0.0014 Ω0.0014 Ω0.05 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)25 pF170 pF
JESD-30 CodeR-PDSO-F5R-PDSO-F8R-PDSO-F5O-PALF-W2R-PSFM-T3R-PSFM-T3R-PDSO-G2R-PDSO-F5
Number of Elements11111111
Operating ModeENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULARROUNDRECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINESMALL OUTLINELONG FORMFLANGE MOUNTFLANGE MOUNTSMALL OUTLINESMALL OUTLINE
Polarity/Channel TypeN-CHANNELN-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)50 W188 W70 W
Pulsed Drain Current-Max (IDM)140 A480 A480 A31.2 A
Surface MountYESYESYESNONONOYESYES
Terminal FormFLATFLATFLATWIRETHROUGH-HOLETHROUGH-HOLEGULL WINGFLAT
Terminal PositionDUALDUALDUALAXIALSINGLESINGLEDUALDUAL
Transistor ApplicationSWITCHINGSWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICONSILICONSILICON
Avalanche Energy Rating (Eas)900 mJ190 mJ
JESD-609 Codee3e3e3e3e3
Peak Reflow Temperature (Cel)260NOT SPECIFIED260260
Terminal FinishMatte Tin (Sn) - annealedMatte Tin (Sn) - annealedMatte Tin (Sn)Matte Tin (Sn) - annealedMatte Tin (Sn) - annealed
Additional FeatureEXCELLENT CLAMPING CAPABILITY, PRSM-MINAVALANCHE RATED
Breakdown Voltage-Max15.8 V
Breakdown Voltage-Min14.3 V
Breakdown Voltage-Nom15.05 V
Clamping Voltage-Max21.2 V
Diode Element MaterialSILICONSILICON
Diode TypeTRANS VOLTAGE SUPPRESSOR DIODERECTIFIER DIODE
JEDEC-95 CodeDO-15TO-220ABTO-220AB
Non-rep Peak Rev Power Dis-Max600 W
PolarityBIDIRECTIONAL
Power Dissipation-Max5 W0.16 W
Rep Pk Reverse Voltage-Max12.8 V40 V
TechnologyAVALANCHESCHOTTKY
Critical Rate of Rise of Off-State Voltage-Min40 V/us400 V/us
DC Gate Trigger Current-Max10 mA50 mA
DC Gate Trigger Voltage-Max1.3 V1.3 V
Holding Current-Max15 mA50 mA
Leakage Current-Max2 mA2 mA
Qualification StatusNot QualifiedNot QualifiedNot Qualified
RMS On-state Current-Max16 A16 A
Repetitive Peak Off-state Voltage600 V800 V
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED30
Trigger Device Type4 QUADRANT LOGIC LEVEL TRIAC4 QUADRANT LOGIC LEVEL TRIAC
Critical Rate of Rise of Commutation Voltage-Min10 V/us
Pbfree CodeYes
Manufacturer Package Code477-02
ApplicationGENERAL PURPOSE
Forward Voltage-Max (VF)0.59 V
Non-rep Pk Forward Current-Max1 A
Number of Phases1
Output Current-Max0.25 A
Reverse Current-Max6 µA
Reverse Recovery Time-Max0.005 µs
Reverse Test Voltage40 V
Reference StandardAEC-Q101

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Quick Links

P6KE15CA

suggested

STL8N10LF3by STMicroelectronics

Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Why Look for Alternatives?

Finding alternatives for STL8N10F7 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STL8N10F7 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STL8N10F7?

Known equivalents for STL8N10F7 include STL260N4LF7, STL220N6F7, P6KE15CA. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STL8N10F7?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STL8N10F7 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.