STGWA15H120F2 STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STGWA15H120F2 is a trench gate field-stop IGBT from STMicroelectronics rated at 1200 V and 15 A in a TO-247 through-hole package. It is optimized for high-speed switching in resonant and hard-switching topologies with low conduction and switching losses. Available from stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STGWA15H120F2 Datasheet PDF
- Category
- Transistor IGBT
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGWA15H120F2?
- 1200 V collector-emitter breakdown voltage enabling direct use in 600 V AC line-connected power conversion stages
- 15 A continuous collector current with trench gate field-stop technology reducing conduction losses at elevated temperatures
- High-speed H-series optimisation providing fast turn-off with low tail current for 20 kHz to 100 kHz switching designs
- TO-247 through-hole package simplifying heatsink mounting and delivering low thermal resistance for high-power dissipation
What is STGWA15H120F2 used for?
The STGWA15H120F2 is targeted at PFC boost stages, full-bridge DC-DC converters, and UPS inverters operating from rectified 400 V or 600 V DC buses that require a rugged 1200 V switch with fast commutation. Its low switching losses make it competitive in LLC resonant converters running above 50 kHz where turn-on and turn-off energy directly determines efficiency. The device is also deployed in solar micro-inverters and motor-drive output stages where the combination of 1200 V blocking voltage and 15 A current rating fits the typical 1.5 kW to 3 kW power class.
What are the specifications of STGWA15H120F2?
| YTEOL | 0 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGWA15H120F2 datasheet?
STGWA15H120F2 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGWA15H120F2?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What continuous collector current and voltage rating make STGWA15H120F2 suitable for PFC and inverter designs?
The STGWA15H120F2 is rated for 15 A continuous collector current at a 1200 V collector-emitter voltage, which directly supports PFC boost stages and full-bridge inverters connected to 230 V AC mains after rectification. The 1200 V headroom provides more than 2x margin over the 400 V DC bus peak, accommodating line transients and parasitic ringing without additional snubbers.
How does the trench gate field-stop structure in STGWA15H120F2 reduce power losses versus a standard planar IGBT?
The trench gate geometry reduces gate-collector capacitance by approximately 30% compared to planar IGBTs of the same voltage class, lowering switching losses at 20 kHz switching frequency. The field-stop buffer layer truncates the conductivity-modulated drift region, cutting turn-off tail current and reducing turn-off energy to under 0.5 mJ at 15 A, which translates directly to higher efficiency in hard-switching converters.
At what switching frequency can STGWA15H120F2 operate efficiently in a resonant LLC converter design?
The H-series high-speed optimisation allows operation at switching frequencies from 20 kHz to above 100 kHz in zero-voltage-switching LLC resonant topologies, where the soft commutation eliminates most turn-on losses. At 100 kHz with ZVS transitions, measured turn-off energy is typically under 0.3 mJ at 600 V and 15 A, giving efficiency above 98% in a 2 kW LLC stage.
What thermal resistance does the TO-247 package of STGWA15H120F2 offer, and how does that affect heatsink selection?
The TO-247 package provides a junction-to-case thermal resistance of approximately 1.0 K/W, which limits the maximum continuous power dissipation to around 125 W with an adequate heatsink at 25 degrees Celsius ambient. A designer selecting a heatsink for a 2 kW converter with 2% IGBT losses (40 W) would need a heatsink thermal resistance below 1.8 K/W to keep the junction below 150 degrees Celsius.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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