STGF10NC60KDAlternatives & Equivalent Parts
About STGF10NC60KD
STGF10NC60KD is a Transistor IGBT component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STGF10NC60KDSource | STGB10NC60KD | STGP10NC60KD | LM293P | STGF10NB60SD |
|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | Texas Instruments | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | — | Transistor Outline, Vertical | Dual-In-Line Packages | Transistor Outline, Vertical |
| Pin Count | 3 | 3 | 3 | 8 | 3 |
| Temperature Range | ~ 150.0°C | ~ 150.0°C | ~ 150.0°C | -25.0°C ~ 85.0°C | ~ 150.0°C |
| Price | $0.3907 | — | $0.5449 | $0.1470 | $0.6273 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||
| Factory Lead Time | 14 Weeks | — | 14 Weeks | — | 14 Weeks |
| YTEOL | 5.25 | 5 | 5.25 | 15 | 5.25 |
| Case Connection | ISOLATED | — | ISOLATED | — | ISOLATED |
| Collector Current-Max (IC) | 9 A | 20 A | 20 A | — | 23 A |
| Collector-Emitter Voltage-Max | 600 V | 600 V | 600 V | — | 600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | SINGLE WITH BUILT-IN DIODE | — | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7 V | 7 V | 7 V | — | 5 V |
| Gate-Emitter Voltage-Max | 20 V | 20 V | 20 V | — | 20 V |
| JEDEC-95 Code | TO-220AB | — | TO-220AB | — | TO-220AB |
| JESD-30 Code | R-PSFM-T3 | — | R-PSFM-T3 | R-PDIP-T8 | R-PSFM-T3 |
| JESD-609 Code | e3 | e0 | e3 | e4 | e3 |
| Number of Elements | 1 | — | 1 | — | 1 |
| Package Body Material | PLASTIC/EPOXY | — | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | — | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | FLANGE MOUNT | — | FLANGE MOUNT | IN-LINE | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | — | NOT SPECIFIED | — | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | N-CHANNEL | — | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25 W | 60 W | 60 W | — | 25 W |
| Qualification Status | Not Qualified | — | Not Qualified | Not Qualified | Not Qualified |
| Surface Mount | NO | YES | NO | NO | NO |
| Terminal Finish | Matte Tin (Sn) - annealed | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE | — | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal Position | SINGLE | — | SINGLE | DUAL | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | — | NOT SPECIFIED | — | NOT SPECIFIED |
| Transistor Application | POWER CONTROL | — | POWER CONTROL | — | POWER CONTROL |
| Transistor Element Material | SILICON | — | SILICON | — | SILICON |
| Turn-off Time-Nom (toff) | 242 ns | — | 242 ns | — | 3100 ns |
| Turn-on Time-Nom (ton) | 23 ns | — | 23 ns | — | 1160 ns |
| Pbfree Code | — | — | — | Yes | — |
| Date Of Intro | — | — | — | 1976-11-06 | — |
| Amplifier Type | — | — | — | COMPARATOR | — |
| Average Bias Current-Max (IIB) | — | — | — | 0.4 µA | — |
| Bias Current-Max (IIB) @25C | — | — | — | 0.05 µA | — |
| Input Offset Voltage-Max | — | — | — | 5000 µV | — |
| Number of Functions | — | — | — | 2 | — |
| Output Type | — | — | — | OPEN-COLLECTOR; OPEN-DRAIN | — |
| Package Equivalence Code | — | — | — | DIP8,.3 | — |
| Packing Method | — | — | — | TUBE | — |
| Response Time-Nom | — | — | — | 1300 ns | — |
| Subcategory | — | — | — | Comparator | — |
| Supply Current-Max | — | — | — | 1 mA | — |
| Supply Voltage Limit-Max | — | — | — | 36 V | — |
| Supply Voltage-Nom (Vsup) | — | — | — | 5 V | — |
| Technology | — | — | — | BIPOLAR | — |
| Temperature Grade | — | — | — | OTHER | — |
| Terminal Pitch | — | — | — | 2.54 mm | — |
| ## LM293P Alternates Showing results | — | — | — | Image | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 4 alternatives for STGF10NC60KD — response within 24 hours.
Quick Links
suggested
suggested
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Why Look for Alternatives?
Finding alternatives for STGF10NC60KD is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STGF10NC60KD replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STGF10NC60KD?
Known equivalents for STGF10NC60KD include STGB10NC60KD, STGP10NC60KD, LM293P. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STGF10NC60KD?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STGF10NC60KD alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.