STGB10NB37LZT4 STMicroelectronics Integrated Circuit (D2PAK) In Stock
The STGB10NB37LZT4 is an N-channel IGBT transistor rated for 375 V collector-emitter voltage and 20 A continuous collector current, featuring an integrated freewheeling diode and gate resistor in a 3-pin D2PAK (TO-263) surface-mount package. It incorporates voltage clamping for enhanced robustness against inductive switching transients, making it suitable for high-reliability power switching applications. Ideal for motor drives, switching power supplies, and induction heating systems operating from mains voltage.
- Manufacturer
- STMicroelectronics
- Package
- —
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STGB10NB37LZT4 Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.7622(MOQ 10)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGB10NB37LZT4?
- N-channel IGBT rated 375 V VCE and 20 A IC for robust power switching
- Integrated freewheeling diode eliminates the need for an external anti-parallel diode
- Built-in gate resistor for simplified gate drive circuitry
- Voltage clamping feature protects against inductive switching overvoltage spikes
- Low saturation voltage VCE(sat) reduces conduction losses at rated current
- D2PAK (TO-263) surface-mount package with exposed pad for superior thermal performance
What is STGB10NB37LZT4 used for?
The STGB10NB37LZT4 is primarily used in compact motor drive inverters for single-phase AC motors, where its 375 V blocking voltage covers rectified 230 V AC mains and its 20 A rating handles moderate motor current loads. The integrated freewheeling diode and gate resistor reduce the external component count in H-bridge and half-bridge topologies, making it popular in induction cooktops and power tools. It is also deployed in resonant switching power supplies and electronic ballasts operating directly from European 230 V or North American 120 V grid supplies.
What are the specifications of STGB10NB37LZT4?
| Pbfree Code | Yes |
| Factory Lead Time | 14Weeks |
| YTEOL | 0 |
| Additional Feature | VOLTAGE CLAMPING |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 20A |
| Collector-Emitter Voltage-Max | 375V |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Gate-Emitter Thr Voltage-Max | 2.4V |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | AUTOMOTIVE IGNITION |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 17800ns |
| Turn-on Time-Nom (ton) | 860ns |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the STGB10NB37LZT4 datasheet?
STGB10NB37LZT4 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGB10NB37LZT4?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Why does STGB10NB37LZT4 include an integrated gate resistor, and how does it affect switching speed?
The integrated gate resistor in STGB10NB37LZT4 damps gate oscillations during switching transitions by limiting the gate charge and discharge rate. This slows switching edges slightly compared to a pure IGBT without a gate resistor, but it reduces electromagnetic interference and prevents parasitic oscillations that can damage the gate oxide at 375 V operating voltages. The typical gate resistance value is chosen to balance switching loss and EMI performance across the 20 A rated load current.
How does the voltage clamping feature of STGB10NB37LZT4 protect the circuit during motor drive turn-off?
The voltage clamping feature limits the collector-emitter voltage spike that occurs when an inductive motor load interrupts current through the IGBT at turn-off. By clamping VCE to a voltage below the 375 V breakdown rating, it absorbs the energy stored in the stray inductance of the motor windings and PCB traces, protecting the device from avalanche-induced failure. This eliminates the need for external transient voltage suppression (TVS) or RC snubber circuits in many motor drive designs.
For a 1 kW single-phase motor drive operating from 230 V AC mains, is 20 A IC sufficient for STGB10NB37LZT4?
At 230 V AC mains, the rectified DC bus voltage is approximately 325 V, and a 1 kW motor load draws about 4 A from the DC bus in steady state. The 20 A continuous collector current rating of STGB10NB37LZT4 provides a 5x safety margin over the steady-state current, leaving ample headroom for motor start-up inrush currents which can be 3 to 6 times the running current, and for thermal derating in enclosed enclosures operating at 85°C ambient.
How does the D2PAK package of STGB10NB37LZT4 simplify PCB thermal management compared to a TO-220 through-hole package?
The D2PAK (TO-263) package provides a large exposed collector pad on the underside that solders directly to a PCB copper pour, achieving junction-to-board thermal resistance of approximately 1°C/W with a good thermal pad design. The TO-220 through-hole alternative requires a separate heatsink and thermal interface material, which adds assembly steps and height. The D2PAK surface-mount mounting allows automated pick-and-place assembly and keeps the component height below 5 mm, enabling more compact power stage designs.
Does STGB10NB37LZT4 require an external freewheeling diode in an H-bridge inverter circuit?
No, STGB10NB37LZT4 integrates a built-in anti-parallel freewheeling diode, so no external diode is needed in an H-bridge or half-bridge inverter topology. This diode conducts the recirculating current during dead time between switching events, protecting the IGBT from reverse voltage. The integration reduces BOM count by one diode per switch position and minimizes commutation loop inductance, improving switching performance at the 375 V bus voltage.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $3.5280 | $35.28 |
| 50+ | $1.5400 | $77.00 |
| 100+ | $1.3400 | $134.00 |
| 500+ | $1.2200 | $610.00 |
| 3000+ | $0.8215 | $2464.38 |
| 4000+ | $0.7622 | $3048.88 |
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