STD7NM60N STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STD7NM60N is an N-channel 600 V MDmesh II power MOSFET from STMicroelectronics with 5 A drain current and 0.9 Ω max on-resistance in a compact DPAK (TO-252) package. Its single-transistor configuration with a built-in diode and 119 mJ avalanche energy rating ensures reliable performance in space-constrained switching designs. Available from major distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD7NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.8004(MOQ 7)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD7NM60N?
- 600 V drain-source breakdown voltage with MDmesh II technology for improved switching efficiency
- Compact DPAK (TO-252/JEDEC TO-252) surface-mount package enabling space-efficient PCB layouts
- Built-in diode with 119 mJ avalanche energy rating for robust unclamped inductive switching protection
What is STD7NM60N used for?
The STD7NM60N is suitable for offline switching power supplies, LED driver circuits, and auxiliary power converters operating up to 600 V. Its surface-mount DPAK package and 5 A rating make it a practical choice for compact adapters and consumer electronics power stages. The MDmesh II structure reduces gate charge, enabling higher switching frequencies with lower switching losses.
What are the specifications of STD7NM60N?
| Reach Compliance Code | Not Compliant |
| Factory Lead Time | 14Weeks |
| YTEOL | 6.25 |
| Avalanche Energy Rating (Eas) | 119mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 0.9Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 45W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STD7NM60N datasheet?
STD7NM60N Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD7NM60N?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain current and voltage ratings does the STD7NM60N support in steady-state operation?
The STD7NM60N supports a maximum continuous drain current of 5 A and a drain-source breakdown voltage of 600 V minimum. The drain-source on-resistance is rated at 0.9 Ω maximum, which determines conduction losses in applications such as offline SMPS and LED drivers.
How does the DPAK package of the STD7NM60N compare to through-hole alternatives for thermal management?
The DPAK (TO-252) surface-mount package offers a smaller PCB footprint than through-hole TO-220 parts while still providing a large exposed pad for heatsinking up to the device's thermal limits. For designs with junction temperatures below 100°C at 5 A, the DPAK thermal resistance is typically adequate without external heatsinking in well-ventilated enclosures.
In which switching topologies is the STD7NM60N's 119 mJ avalanche energy rating most relevant?
The 119 mJ avalanche energy rating is most relevant in flyback and boost converter topologies where the transformer or inductor can generate voltage spikes exceeding the 600 V rail. Designs with inductive loads switching at 50–100 kHz benefit from avalanche-rated MOSFETs like the STD7NM60N to handle transient overvoltage events without device degradation.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 7+ | $0.8211 | $5.75 |
| 5000+ | $0.8004 | $4002.00 |
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