STD3NK80Z-1Alternatives & Equivalent Parts
About STD3NK80Z-1
STD3NK80Z-1 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STD3NK80Z-1Source | C3216X7R2A105M160AA | CRCW040233K2FKED | MBR1H100SFT3G | 35SVPF39M | DFLS1200-7 | ECS-.320-12.5-13X | STD3NK80ZT4 |
|---|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | TDK | Vishay | ON Semiconductor | Panasonic | Diodes Inc. | ECS | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Capacitor Chip Non-polarised | Other | Small Outline Diode Flat Lead | Other | Other | Other | Other |
| Pin Count | 3 | 2 | 2 | 2 | 2 | 2 | 2 | 3 |
| Temperature Range | ~ 150.0°C | -55.0°C ~ 125.0°C | -55.0°C ~ 155.0°C | -65.0°C ~ 175.0°C | -55.0°C ~ 105.0°C | -65.0°C ~ 175.0°C | -10.0°C ~ 60.0°C | ~ 150.0°C |
| Price | $0.6900 | $0.0741 | $0.0017 | $0.0932 | $0.5840 | $0.2954 | $0.7850 | $0.6063 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | NOT RECOMMENDED | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | ||||||||
| Factory Lead Time | 13 Weeks | 24 Weeks | — | 8 Weeks | — | 12 Weeks | 24 Weeks | 13 Weeks |
| YTEOL | 6.2 | 3 | 13 | 6.07 | 7 | 6.19 | 5.72 | 6 |
| Additional Feature | AVALANCHE RATED | — | RATED AC VOLTAGE (V): 50 | FREE WHEELING DIODE | ESR IS MEASURED AT 100KHZ TO 300KHZ | HIGH RELIABILITY, LOW POWER LOSS | — | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 170 mJ | — | — | — | — | — | — | 170 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | — | SINGLE | — | SINGLE | — | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800 V | — | — | — | — | — | — | 800 V |
| Drain Current-Max (ID) | 2.5 A | — | — | — | — | — | — | 2.5 A |
| Drain-source On Resistance-Max | 4.5 Ω | — | — | — | — | — | — | 4.5 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — | — | — | — | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-251 | — | — | — | — | — | — | TO-252 |
| JESD-30 Code | R-PSIP-T3 | — | — | R-PDSO-F2 | — | R-PDSO-F2 | — | R-PSSO-G2 |
| JESD-609 Code | e3 | e3 | — | e3 | e3 | e3 | e2 | e3 |
| Number of Elements | 1 | — | — | 1 | — | 1 | — | 1 |
| Operating Mode | ENHANCEMENT MODE | — | — | — | — | — | — | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | — | — | PLASTIC/EPOXY | — | PLASTIC/EPOXY | — | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR PACKAGE | — | RECTANGULAR | CYLINDRICAL PACKAGE | RECTANGULAR | — | RECTANGULAR |
| Package Style | IN-LINE | SMT | SMT | SMALL OUTLINE | SMT | SMALL OUTLINE | — | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | — | — | — | — | — | — | N-CHANNEL |
| Power Dissipation-Max (Abs) | 70 W | — | — | — | — | — | — | 70 W |
| Pulsed Drain Current-Max (IDM) | 10 A | — | — | — | — | — | — | 10 A |
| Qualification Status | Not Qualified | — | — | Not Qualified | — | Not Qualified | — | Not Qualified |
| Surface Mount | NO | YES | YES | YES | YES | YES | NO | YES |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) - with Nickel (Ni) barrier | MATTE TIN | Tin (Sn) | Matte Tin (Sn) | Tin/Copper (Sn/Cu) - with Nickel (Ni) barrier | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE | — | — | FLAT | — | FLAT | — | GULL WING |
| Terminal Position | SINGLE | — | — | DUAL | — | DUAL | — | SINGLE |
| Transistor Application | SWITCHING | — | — | — | — | — | — | SWITCHING |
| Transistor Element Material | SILICON | — | — | — | — | — | — | SILICON |
| Pbfree Code | — | Yes | Yes | Yes | Yes | No | — | — |
| Reach Compliance Code | — | Compliant | Compliant | — | Compliant | — | — | — |
| Capacitance | — | 1 µF | — | — | 39 µF | — | — | — |
| Capacitor Type | — | CERAMIC CAPACITOR | — | — | ALUMINUM ELECTROLYTIC CAPACITOR | — | — | — |
| Dielectric Material | — | CERAMIC | — | — | ALUMINUM (SOLID POLYMER) | — | — | — |
| Height | — | 1.6 mm | — | — | 6.9 mm | — | — | — |
| Mounting Feature | — | SURFACE MOUNT | SURFACE MOUNT | — | SURFACE MOUNT | — | THROUGH HOLE MOUNT | — |
| Multilayer | — | Yes | — | — | — | — | — | — |
| Negative Tolerance | — | 20% | — | — | 20% | — | — | — |
| Packing Method | — | TR, 7 INCH | TR, Paper, 7 Inch | — | TR, EMBOSSED, 15 INCH | — | — | — |
| Positive Tolerance | — | 20% | — | — | 20% | — | — | — |
| Rated (DC) Voltage (URdc) | — | 100 V | — | — | 35 V | — | — | — |
| Size Code | — | 1206 | 0402 | — | 3333 | — | — | — |
| Temperature Characteristics Code | — | X7R | — | — | — | — | — | — |
| Temperature Coefficient | — | 15% ppm/°C | — | — | — | — | — | — |
| Terminal Shape | — | WRAPAROUND | WRAPAROUND | — | FLAT | — | — | — |
| Construction | — | — | Rectangular | — | — | — | — | — |
| Package Height | — | — | 0.35 mm | — | — | — | — | — |
| Package Length | — | — | 1 mm | — | — | — | — | — |
| Package Width | — | — | 0.5 mm | — | — | — | — | — |
| Rated Power Dissipation (P) | — | — | 0.063 W | — | — | — | — | — |
| Rated Temperature | — | — | 70 °C | — | — | — | — | — |
| Reference Standard | — | — | AEC-Q200 | — | — | — | — | — |
| Resistance | — | — | 33200 Ω | — | — | — | — | — |
| Resistor Type | — | — | FIXED RESISTOR | — | — | — | — | — |
| Technology | — | — | METAL GLAZE/THICK FILM | SCHOTTKY | — | SCHOTTKY | — | — |
| Tolerance | — | — | 1% | — | — | — | — | — |
| Working Voltage | — | — | 50 V | — | — | — | — | — |
| Manufacturer Package Code | — | — | — | 498-01 | — | POWERDI 123 | — | — |
| Application | — | — | — | POWER | — | GENERAL PURPOSE | — | — |
| Breakdown Voltage-Min | — | — | — | 100 V | — | — | — | — |
| Diode Element Material | — | — | — | SILICON | — | SILICON | — | — |
| Diode Type | — | — | — | RECTIFIER DIODE | — | RECTIFIER DIODE | — | — |
| Forward Voltage-Max (VF) | — | — | — | 0.61 V | — | 0.85 V | — | — |
| Non-rep Pk Forward Current-Max | — | — | — | 50 A | — | 40 A | — | — |
| Number of Phases | — | — | — | 1 | — | 1 | — | — |
| Output Current-Max | — | — | — | 1 A | — | 1 A | — | — |
| Peak Reflow Temperature (Cel) | — | — | — | 260 | — | 255 | — | 260 |
| Rep Pk Reverse Voltage-Max | — | — | — | 100 V | — | 200 V | — | — |
| Reverse Current-Max | — | — | — | 40 µA | — | — | — | — |
| Reverse Test Voltage | — | — | — | 100 V | — | — | — | — |
| Time@Peak Reflow Temperature-Max (s) | — | — | — | 30 | — | 30 | — | 30 |
| ESR | — | — | — | — | 30 mΩ | — | — | — |
| Leakage Current | — | — | — | — | 0.273 mA | — | — | — |
| Polarity | — | — | — | — | POLARIZED | — | — | — |
| Ripple Current | — | — | — | — | 140 mA | — | — | — |
| Tan Delta | — | — | — | — | 0.12 | — | — | — |
| Case Connection | — | — | — | — | — | CATHODE | — | — |
| Aging | — | — | — | — | — | — | 5 PPM/FIRST YEAR | — |
| Crystal/Resonator Type | — | — | — | — | — | — | PARALLEL - FUNDAMENTAL | — |
| Drive Level | — | — | — | — | — | — | 1 µW | — |
| Frequency Stability | — | — | — | — | — | — | 0.0042% | — |
| Frequency Tolerance | — | — | — | — | — | — | 30 ppm | — |
| Load Capacitance | — | — | — | — | — | — | 12.5 pF | — |
| Operating Frequency-Nom | — | — | — | — | — | — | 0.032 MHz | — |
| Physical Dimension | — | — | — | — | — | — | 6.2mm x 2.1 mm | — |
| Series Resistance | — | — | — | — | — | — | 30000 Ω | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 7 alternatives for STD3NK80Z-1 — response within 24 hours.
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Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Why Look for Alternatives?
Finding alternatives for STD3NK80Z-1 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STD3NK80Z-1 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STD3NK80Z-1?
Known equivalents for STD3NK80Z-1 include C3216X7R2A105M160AA, CRCW040233K2FKED, MBR1H100SFT3G. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STD3NK80Z-1?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STD3NK80Z-1 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.