STD15NF10T4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STD15NF10T4 is an N-channel power MOSFET from STMicroelectronics rated at 100 V and 15 A with 0.08 Ω on-resistance in a compact DPAK-3 (TO-252) package. It integrates a built-in body diode and features 75 mJ avalanche energy rating for rugged switching applications. Available from stock with worldwide shipping at competitive pricing.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD15NF10T4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.3554(MOQ 100)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 100 V drain-source breakdown voltage with 15 A continuous drain current rating for robust power switching
- Ultra-low 0.08 Ω drain-source on-resistance minimizing conduction losses and improving power efficiency
- 75 mJ avalanche energy rating (Eas) providing excellent robustness against voltage spikes in inductive switching circuits
- Compact DPAK-3 (TO-252) surface-mount package enabling high power density PCB layouts with superior thermal performance
Applications
The STD15NF10T4 is ideal for DC-DC converters, synchronous rectifiers, and battery charger circuits operating at up to 100 V where low conduction losses are critical. Its robust avalanche energy rating makes it well-suited for motor drive circuits and solenoid drivers that generate inductive voltage spikes. The compact DPAK package enables efficient power management in automotive electronics, industrial power supplies, and consumer electronics applications.
Specifications
| Factory Lead Time | 13Weeks |
| YTEOL | 5.75 |
| Avalanche Energy Rating (Eas) | 75mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 15A |
| Drain-source On Resistance-Max | 0.08Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 70W |
| Pulsed Drain Current-Max (IDM) | 60A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STD15NF10T4?
The STD15NF10T4 is rated for 100 V drain-source breakdown voltage and 15 A maximum continuous drain current, with a very low on-resistance of 0.08 Ω, making it suitable for efficient power switching in medium-power applications.
What package does the STD15NF10T4 use and is it surface-mount compatible?
The STD15NF10T4 comes in a DPAK-3 package (also known as TO-252), which is a surface-mount package with a drain tab for excellent heat dissipation, allowing high power density designs without through-hole mounting.
What applications is the STD15NF10T4 best suited for?
This MOSFET is well-suited for DC-DC converters, motor drive circuits, battery management systems, and power factor correction stages where a combination of 100 V withstand voltage, 15 A current capacity, and low 0.08 Ω on-resistance is needed.
Does the STD15NF10T4 include a built-in diode?
Yes, the STD15NF10T4 includes a built-in body diode (anti-parallel diode) in a single-device configuration, which enables use in synchronous rectification and H-bridge motor drive topologies without an external freewheeling diode.
What is the avalanche energy rating of the STD15NF10T4 and why does it matter?
The STD15NF10T4 has an avalanche energy rating (Eas) of 75 mJ, which indicates how much energy the device can safely absorb when an inductive load causes voltage spikes beyond the rated breakdown voltage, enhancing circuit reliability in motor and relay-driving applications.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.7668 | $76.68 |
| 250+ | $0.4828 | $120.70 |
| 500+ | $0.4680 | $234.00 |
| 1000+ | $0.4533 | $453.30 |
| 2500+ | $0.4138 | $1034.50 |
| 7500+ | $0.3554 | $2665.50 |
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