STD12N65M2Alternatives & Equivalent Parts
About STD12N65M2
STD12N65M2 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STD12N65M2Source | UCC256404BDDBR | TCMT1100 | CRCW040247K5FKED | GBU4K-E3/45 | MBRB40250TG | STD12N60M6 | STD12N60DM6 | STD12N60DM2AG |
|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | Texas Instruments | Vishay | Vishay | Vishay | ON Semiconductor | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Other | Small Outline Packages | Small Outline Packages | Other | Other | Other | Other | Other | Other |
| Pin Count | 3 | 16 | 4 | 2 | 4 | 3 | 3 | 3 | 3 |
| Temperature Range | ~ 150.0°C | -40.0°C ~ 125.0°C | -40.0°C ~ 100.0°C | -55.0°C ~ 155.0°C | -55.0°C ~ 150.0°C | -65.0°C ~ 150.0°C | — | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C |
| Price | $0.5577 | $1.1600 | $0.2029 | $0.0015 | $0.5800 | $1.0400 | $1.9300 | $0.8207 | $0.8217 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | OBSOLETE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||||||
| Factory Lead Time | 14 Weeks | — | — | — | 7 Weeks | — | — | 14 Weeks | 16 Weeks |
| YTEOL | 6 | 15 | 8 | 13 | 6.85 | 0 | 6.28 | 6 | 6 |
| Configuration | SINGLE | — | SINGLE | — | BRIDGE, 4 ELEMENTS | SINGLE | — | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 8 A | — | — | — | — | — | — | 10 A | 10 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — | — | — | — | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 | — | 1 | — | 4 | 1 | — | 1 | 1 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 260 | — | — | — | 260 | — | — | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | — | — | — | — | — | — | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 85 W | — | — | — | — | — | — | 90 W | 110 W |
| Surface Mount | YES | YES | YES | YES | NO | YES | — | YES | YES |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 30 | — | — | — | NOT SPECIFIED | — | — | NOT SPECIFIED |
| Pbfree Code | — | Yes | — | Yes | — | Yes | — | — | — |
| Date Of Intro | — | 2020-11-22 | — | — | — | — | — | 2020-10-12 | 2018-12-13 |
| Analog IC - Other Type | — | SWITCHING CONTROLLER | — | — | — | — | — | — | — |
| Control Mode | — | CURRENT-MODE | — | — | — | — | — | — | — |
| Control Technique | — | RESONANT CONTROL | — | — | — | — | — | — | — |
| Input Voltage-Max | — | 30 V | — | — | — | — | — | — | — |
| Input Voltage-Min | — | 13 V | — | — | — | — | — | — | — |
| Input Voltage-Nom | — | 15 V | — | — | — | — | — | — | — |
| JESD-30 Code | — | R-PDSO-G14 | — | — | R-PSFM-T4 | R-PSSO-G2 | — | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 Code | — | e4 | e3 | — | e3 | e3 | — | — | — |
| Number of Functions | — | 1 | — | — | — | — | — | — | — |
| Output Current-Max | — | 1.2 A | — | — | 3 A | 40 A | — | — | — |
| Package Body Material | — | PLASTIC/EPOXY | — | — | PLASTIC/EPOXY | PLASTIC/EPOXY | — | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Equivalence Code | — | SOP14/16,.25 | — | — | — | — | — | — | — |
| Package Shape | — | RECTANGULAR | — | — | RECTANGULAR | RECTANGULAR | — | RECTANGULAR | RECTANGULAR |
| Package Style | — | SMALL OUTLINE | — | SMT | FLANGE MOUNT | SMALL OUTLINE | — | SMALL OUTLINE | SMALL OUTLINE |
| Supply Current-Max (Isup) | — | 2.7 mA | — | — | — | — | — | — | — |
| Supply Voltage-Max (Vsup) | — | 30 V | — | — | — | — | — | — | — |
| Supply Voltage-Min (Vsup) | — | 13 V | — | — | — | — | — | — | — |
| Switching Frequency-Max | — | 99.7 kHz | — | — | — | — | — | — | — |
| Technology | — | BICMOS | — | METAL GLAZE/THICK FILM | — | SCHOTTKY | — | — | — |
| Temperature Grade | — | AUTOMOTIVE | — | — | — | — | — | — | — |
| Terminal Finish | — | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Matte Tin (Sn) - with Nickel (Ni) barrier | MATTE TIN | Matte Tin (Sn) - annealed | — | — | — |
| Terminal Form | — | GULL WING | — | — | THROUGH-HOLE | GULL WING | — | GULL WING | GULL WING |
| Terminal Pitch | — | 1.27 mm | — | — | — | — | — | — | — |
| Terminal Position | — | DUAL | — | — | SINGLE | SINGLE | — | SINGLE | SINGLE |
| Additional Feature | — | — | UL APPROVED, VDE APPROVED | RATED AC VOLTAGE (V): 50 | — | — | — | — | — |
| Coll-Emtr Bkdn Voltage-Min | — | — | 70 V | — | — | — | — | — | — |
| Current Transfer Ratio-Min | — | — | 50% | — | — | — | — | — | — |
| Current Transfer Ratio-Nom | — | — | 50% | — | — | — | — | — | — |
| Dark Current-Max | — | — | 100 nA | — | — | — | — | — | — |
| Forward Current-Max | — | — | 0.06 A | — | — | — | — | — | — |
| Forward Voltage-Max | — | — | 1.6 V | — | — | — | — | — | — |
| Isolation Voltage-Max | — | — | 3750 V | — | — | — | — | — | — |
| Mounting Feature | — | — | SURFACE MOUNT | SURFACE MOUNT | — | — | — | — | — |
| On-State Current-Max | — | — | 0.05 A | — | — | — | — | — | — |
| Optoelectronic Device Type | — | — | TRANSISTOR OUTPUT OPTOCOUPLER | — | — | — | — | — | — |
| Power Dissipation-Max | — | — | 0.15 W | — | — | — | — | — | — |
| Reach Compliance Code | — | — | — | Compliant | — | — | — | — | — |
| Construction | — | — | — | Rectangular | — | — | — | — | — |
| Package Height | — | — | — | 0.35 mm | — | — | — | — | — |
| Package Length | — | — | — | 1 mm | — | — | — | — | — |
| Package Width | — | — | — | 0.5 mm | — | — | — | — | — |
| Packing Method | — | — | — | TR, Paper, 7 Inch | — | — | — | — | — |
| Rated Power Dissipation (P) | — | — | — | 0.063 W | — | — | — | — | — |
| Rated Temperature | — | — | — | 70 °C | — | — | — | — | — |
| Reference Standard | — | — | — | AEC-Q200 | UL RECOGNIZED | — | — | — | AEC-Q101 |
| Resistance | — | — | — | 47500 Ω | — | — | — | — | — |
| Resistor Type | — | — | — | FIXED RESISTOR | — | — | — | — | — |
| Size Code | — | — | — | 0402 | — | — | — | — | — |
| Terminal Shape | — | — | — | WRAPAROUND | — | — | — | — | — |
| Tolerance | — | — | — | 1% | — | — | — | — | — |
| Working Voltage | — | — | — | 50 V | — | — | — | — | — |
| Breakdown Voltage-Min | — | — | — | — | 800 V | 250 V | — | — | — |
| Case Connection | — | — | — | — | ISOLATED | CATHODE | — | DRAIN | DRAIN |
| Diode Element Material | — | — | — | — | SILICON | SILICON | — | — | — |
| Diode Type | — | — | — | — | BRIDGE RECTIFIER DIODE | RECTIFIER DIODE | — | — | — |
| Forward Voltage-Max (VF) | — | — | — | — | 1 V | 0.71 V | — | — | — |
| Non-rep Pk Forward Current-Max | — | — | — | — | 150 A | 150 A | — | — | — |
| Number of Phases | — | — | — | — | 1 | 1 | — | — | — |
| Qualification Status | — | — | — | — | Not Qualified | Not Qualified | — | — | — |
| Rep Pk Reverse Voltage-Max | — | — | — | — | 800 V | 250 V | — | — | — |
| Manufacturer Package Code | — | — | — | — | — | 418B-04 | — | — | — |
| Application | — | — | — | — | — | EFFICIENCY | — | — | — |
| JEDEC-95 Code | — | — | — | — | — | TO-263AB | — | TO-252 | TO-252 |
| Reverse Current-Max | — | — | — | — | — | 250 µA | — | — | — |
| Reverse Recovery Time-Max | — | — | — | — | — | 0.035 µs | — | — | — |
| Reverse Test Voltage | — | — | — | — | — | 250 V | — | — | — |
| Avalanche Energy Rating (Eas) | — | — | — | — | — | — | — | 195 mJ | 250 mJ |
| DS Breakdown Voltage-Min | — | — | — | — | — | — | — | 600 V | 600 V |
| Drain-source On Resistance-Max | — | — | — | — | — | — | — | 0.39 Ω | 0.43 Ω |
| Feedback Cap-Max (Crss) | — | — | — | — | — | — | — | 4.7 pF | 3.7 pF |
| Operating Mode | — | — | — | — | — | — | — | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Pulsed Drain Current-Max (IDM) | — | — | — | — | — | — | — | 28 A | 25 A |
| Transistor Application | — | — | — | — | — | — | — | SWITCHING | SWITCHING |
| Transistor Element Material | — | — | — | — | — | — | — | SILICON | SILICON |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 8 alternatives for STD12N65M2 — response within 24 hours.
Quick Links
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Power Field-Effect Transistor, 9A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Power Field-Effect Transistor, 10A I(D), 600V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Power Field-Effect Transistor, 10A I(D), 600V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Why Look for Alternatives?
Finding alternatives for STD12N65M2 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STD12N65M2 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STD12N65M2?
Known equivalents for STD12N65M2 include UCC256404BDDBR, TCMT1100, CRCW040247K5FKED. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STD12N65M2?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STD12N65M2 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.