STD11NM65NAlternatives & Equivalent Parts

About STD11NM65N

STD11NM65N is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTD11NM65NSourceSTD11NM50NSTD11NM60ND
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeOtherOtherOther
Pin Count333
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C~ 150.0°C
Price$1.4400$0.6993$1.6380
StockIn StockIn StockIn Stock
LifecycleEND OF LIFEACTIVEOBSOLETE
Electrical Parameters
Factory Lead Time14 Weeks14 Weeks
YTEOL060
Additional FeatureAVALANCHE RATEDAVALANCHE RATED
Avalanche Energy Rating (Eas)147 mJ150 mJ200 mJ
Case ConnectionDRAINDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650 V500 V600 V
Drain Current-Max (ID)11 A9 A10 A
Drain-source On Resistance-Max0.455 Ω0.47 Ω0.45 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)2.9 pF2 pF
JEDEC-95 CodeTO-252TO-252TO-252
JESD-30 CodeR-PSSO-G2R-PSSO-G2R-PSSO-G2
JESD-609 Codee3e3e3
Number of Elements111
Operating ModeENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINESMALL OUTLINE
Peak Reflow Temperature (Cel)260260260
Polarity/Channel TypeN-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)110 W70 W90 W
Pulsed Drain Current-Max (IDM)44 A36 A40 A
Surface MountYESYESYES
Terminal FinishMatte Tin (Sn)Matte Tin (Sn) - annealedMatte Tin (Sn) - annealed
Terminal FormGULL WINGGULL WINGGULL WING
Terminal PositionSINGLESINGLESINGLE
Transistor ApplicationSWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICONSILICON
Qualification StatusNot QualifiedNot Qualified
Time@Peak Reflow Temperature-Max (s)3030

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for STD11NM65N — response within 24 hours.

Quick Links

STD11NM50Nby STMicroelectronics

Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

STD11NM60NDby STMicroelectronics

Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Why Look for Alternatives?

Finding alternatives for STD11NM65N is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STD11NM65N replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

Can't Find What You Need?

Our sourcing team can help find compatible alternatives for STD11NM65N. Get expert recommendations within 24 hours.

FAQ

What is equivalent to STD11NM65N?

Known equivalents for STD11NM65N include STD11NM50N, STD11NM60ND. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STD11NM65N?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STD11NM65N alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.