STB9NK60ZT4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB9NK60ZT4 is an N-Channel 600V Power MOSFET from STMicroelectronics featuring 7A continuous drain current, 0.95Ω maximum RDS(on), a built-in body diode, and 235mJ avalanche energy rating for robust unclamped inductive switching protection. It is housed in a D²PAK-3 surface-mount package and is fully RoHS compliant. Available in stock worldwide with competitive pricing for power supply and switching applications.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB9NK60ZT4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.3584(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB9NK60ZT4?
- 600V N-Channel MOSFET with 7A drain current and built-in body diode enabling reliable high-voltage inductive load switching
- 235mJ avalanche energy rating (Eas) providing robust UIS protection in relay, solenoid, and motor drive circuits
- D²PAK-3 (TO-263) surface-mount package with exposed drain pad for improved thermal dissipation without external heatsink
- RoHS compliant JESD-609 e3 rated with 6.25-year YTEOL ensuring regulatory compliance and continued supply availability
What is STB9NK60ZT4 used for?
The STB9NK60ZT4 is used in offline flyback power supplies, resonant converters, and gate driver output stages where the input is derived from rectified 100–230VAC mains. Its 600V breakdown voltage and single-device configuration with built-in diode make it a practical choice for switching regulators in white goods, lighting drivers, and industrial power adapters. The surface-mount D²PAK package simplifies automated PCB assembly while providing adequate thermal performance for moderate power dissipation levels.
What are the specifications of STB9NK60ZT4?
| Factory Lead Time | 13Weeks |
| YTEOL | 6.25 |
| Avalanche Energy Rating (Eas) | 235mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 7A |
| Drain-source On Resistance-Max | 0.95Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125W |
| Pulsed Drain Current-Max (IDM) | 28A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STB9NK60ZT4 datasheet?
STB9NK60ZT4 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB9NK60ZT4?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STB9NK60ZT4?
The STB9NK60ZT4 has a minimum drain-source breakdown voltage of 600V and a maximum continuous drain current of 7A, making it appropriate for offline power supply topologies operating from rectified AC mains at moderate power levels.
What is the RDS(on) of the STB9NK60ZT4?
The STB9NK60ZT4 has a maximum drain-source on-resistance of 0.95Ω, which is characteristic of higher-voltage N-Channel MOSFETs where the silicon super-junction region contributes to increased on-state resistance compared to lower-voltage devices.
Does the STB9NK60ZT4 have a built-in diode and avalanche protection?
Yes, the STB9NK60ZT4 is configured as a single device with a built-in body diode and is rated for 235mJ avalanche energy (Eas), providing robust protection against voltage spikes from unclamped inductive loads such as relays, solenoids, and transformer leakage.
What package is the STB9NK60ZT4 available in?
The STB9NK60ZT4 comes in a D²PAK-3 (TO-263) surface-mount package with the case connected to the drain, offering good thermal performance suitable for automated SMT assembly in consumer and industrial power supply boards.
Is the STB9NK60ZT4 RoHS compliant?
Yes, the STB9NK60ZT4 carries a JESD-609 code of e3 confirming it is lead-free and fully RoHS compliant. This makes it eligible for use in products sold in the European Union and other markets enforcing environmental regulations.
Related Guides
XITCORP SSD Controllers: RISC-V Architecture and SM2/SM3/SM4 National Cryptography
How XITCORP pairs RISC-V multi-core controllers with hardware SM2/SM3/SM4 national cryptography, AES-256, and TCG Opal 2.0 across its SATA III and PCIe NVMe SSD controller lines.
Jul 12, 2026
SM2, SM3, SM4 National Cryptography in SSDs: A Design Guide for Secure Storage
How hardware SM2/SM3/SM4 engines deliver Guomi-certified full-disk encryption in SSDs, and when to choose national cryptography over AES-256 and TCG Opal 2.0.
Jul 12, 2026
Enterprise vs Industrial SSDs: How to Choose by PLP, DWPD, and Wide-Temperature Endurance
How to pick between enterprise and industrial SSDs using power-loss protection, DWPD/TBW endurance, and -40 to +85C wide-temperature qualification as the deciding factors.
Jul 12, 2026
150141RS73100 Red LED Indicator and Current-Resistor Design Guide
Design a reliable 150141RS73100 red LED indicator with worst-case resistor sizing, GPIO checks, PWM drive, layout, and production validation.
Jul 11, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.9800 | $19.80 |
| 100+ | $1.5300 | $153.00 |
| 1000+ | $1.4100 | $1410.00 |
| 3000+ | $1.4009 | $4202.61 |
| 4000+ | $1.3836 | $5534.32 |
| 8000+ | $1.3584 | $10867.36 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)