STB9NK60ZT4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

The STB9NK60ZT4 is an N-Channel 600V Power MOSFET from STMicroelectronics featuring 7A continuous drain current, 0.95Ω maximum RDS(on), a built-in body diode, and 235mJ avalanche energy rating for robust unclamped inductive switching protection. It is housed in a D²PAK-3 surface-mount package and is fully RoHS compliant. Available in stock worldwide with competitive pricing for power supply and switching applications.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB9NK60ZT4Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $1.3584(MOQ 10)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600V N-Channel MOSFET with 7A drain current and built-in body diode enabling reliable high-voltage inductive load switching
  • 235mJ avalanche energy rating (Eas) providing robust UIS protection in relay, solenoid, and motor drive circuits
  • D²PAK-3 (TO-263) surface-mount package with exposed drain pad for improved thermal dissipation without external heatsink
  • RoHS compliant JESD-609 e3 rated with 6.25-year YTEOL ensuring regulatory compliance and continued supply availability

Applications

The STB9NK60ZT4 is used in offline flyback power supplies, resonant converters, and gate driver output stages where the input is derived from rectified 100–230VAC mains. Its 600V breakdown voltage and single-device configuration with built-in diode make it a practical choice for switching regulators in white goods, lighting drivers, and industrial power adapters. The surface-mount D²PAK package simplifies automated PCB assembly while providing adequate thermal performance for moderate power dissipation levels.

Specifications

Factory Lead Time13Weeks
YTEOL6.25
Avalanche Energy Rating (Eas)235mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)7A
Drain-source On Resistance-Max0.95Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)125W
Pulsed Drain Current-Max (IDM)28A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STB9NK60ZT4 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the STB9NK60ZT4?

The STB9NK60ZT4 has a minimum drain-source breakdown voltage of 600V and a maximum continuous drain current of 7A, making it appropriate for offline power supply topologies operating from rectified AC mains at moderate power levels.

What is the RDS(on) of the STB9NK60ZT4?

The STB9NK60ZT4 has a maximum drain-source on-resistance of 0.95Ω, which is characteristic of higher-voltage N-Channel MOSFETs where the silicon super-junction region contributes to increased on-state resistance compared to lower-voltage devices.

Does the STB9NK60ZT4 have a built-in diode and avalanche protection?

Yes, the STB9NK60ZT4 is configured as a single device with a built-in body diode and is rated for 235mJ avalanche energy (Eas), providing robust protection against voltage spikes from unclamped inductive loads such as relays, solenoids, and transformer leakage.

What package is the STB9NK60ZT4 available in?

The STB9NK60ZT4 comes in a D²PAK-3 (TO-263) surface-mount package with the case connected to the drain, offering good thermal performance suitable for automated SMT assembly in consumer and industrial power supply boards.

Is the STB9NK60ZT4 RoHS compliant?

Yes, the STB9NK60ZT4 carries a JESD-609 code of e3 confirming it is lead-free and fully RoHS compliant. This makes it eligible for use in products sold in the European Union and other markets enforcing environmental regulations.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $1.3584
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$1.9800$19.80
100+$1.5300$153.00
1000+$1.4100$1410.00
3000+$1.4009$4202.61
4000+$1.3836$5534.32
8000+$1.3584$10867.36
pcs
Unit price: $1.9800 · Total: $19.80

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy