STB80NF10T4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

The STB80NF10T4 is an N-channel power MOSFET from STMicroelectronics rated at 100 V drain-source breakdown voltage and 80 A maximum drain current with an ultra-low on-resistance of 15 mΩ in a D2PAK (TO-263) package. It integrates a built-in body diode and supports 350 mJ avalanche energy for robust transient protection. Available from authorized distributors worldwide with competitive pricing and global shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB80NF10T4Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
4
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.8318(MOQ 10)
Temp Range
-55.0°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Ultra-low drain-source on-resistance of 15 mΩ (max) enabling high-efficiency power switching and minimal conduction losses
  • High 80 A maximum drain current rating supporting heavy-load applications such as motor drives and DC-DC converters
  • 350 mJ avalanche energy rating (Eas) providing exceptional robustness against inductive switching transients
  • D2PAK (TO-263AB) surface-mount package with drain-tab connection enabling excellent thermal dissipation on PCB copper planes

Applications

The STB80NF10T4 is designed for high-current power switching applications including synchronous DC-DC converters, motor control circuits, and battery management systems where low conduction losses and high efficiency are critical. Its 100 V rating and 80 A drain current capacity make it well suited for industrial power supplies, UPS systems, and electric vehicle auxiliary power modules. The D2PAK surface-mount package facilitates automated PCB assembly while providing efficient heat dissipation through the exposed drain tab.

Specifications

Factory Lead Time13Weeks
YTEOL5.85
Avalanche Energy Rating (Eas)350mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100V
Drain Current-Max (ID)80A
Drain-source On Resistance-Max0.015Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)210W
Pulsed Drain Current-Max (IDM)320A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STB80NF10T4 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key electrical ratings of the STB80NF10T4?

The STB80NF10T4 is rated for a minimum drain-source breakdown voltage of 100 V and a maximum drain current of 80 A. Its maximum drain-source on-resistance is 15 mΩ, and it supports an avalanche energy rating of 350 mJ, making it suitable for demanding high-current power conversion applications.

What package does the STB80NF10T4 use and how does it help with thermal management?

The STB80NF10T4 uses the D2PAK (TO-263AB) surface-mount package with the case connected to the drain terminal. The large exposed copper tab on the underside allows direct thermal coupling to PCB copper planes or heatsinks, providing efficient heat dissipation for high-power switching operation.

Does the STB80NF10T4 include a built-in body diode?

Yes, the STB80NF10T4 has a built-in body diode (configuration: SINGLE WITH BUILT-IN DIODE), which enables it to handle freewheeling current in inductive switching circuits such as motor drivers and synchronous buck converters without requiring an external schottky diode in many applications.

What is the factory lead time for the STB80NF10T4 and how can I purchase it?

The factory lead time for the STB80NF10T4 is approximately 13 weeks. It is available through authorized STMicroelectronics distributors worldwide. For time-sensitive projects, checking distributor stock and placing orders well in advance is recommended given the lead time.

What applications is the STB80NF10T4 best suited for?

The STB80NF10T4 is best suited for high-current power switching applications including synchronous DC-DC buck/boost converters, industrial motor drives, battery management systems, power factor correction (PFC) stages, and UPS power modules. Its low on-resistance of 15 mΩ and 80 A current rating directly translate to reduced power loss and improved system efficiency.

Related Guides

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Factory-direct from China distributors, low MOQ
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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.8318
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$2.5090$25.09
100+$1.7521$175.21
500+$1.4306$715.28
1000+$0.8318$831.80
pcs
Unit price: $2.5090 · Total: $25.09

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy