STB80NF10T4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB80NF10T4 is an N-channel power MOSFET from STMicroelectronics rated at 100 V drain-source breakdown voltage and 80 A maximum drain current with an ultra-low on-resistance of 15 mΩ in a D2PAK (TO-263) package. It integrates a built-in body diode and supports 350 mJ avalanche energy for robust transient protection. Available from authorized distributors worldwide with competitive pricing and global shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- ACTIVE
- Datasheet
- STB80NF10T4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.8318(MOQ 10)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low drain-source on-resistance of 15 mΩ (max) enabling high-efficiency power switching and minimal conduction losses
- High 80 A maximum drain current rating supporting heavy-load applications such as motor drives and DC-DC converters
- 350 mJ avalanche energy rating (Eas) providing exceptional robustness against inductive switching transients
- D2PAK (TO-263AB) surface-mount package with drain-tab connection enabling excellent thermal dissipation on PCB copper planes
Applications
The STB80NF10T4 is designed for high-current power switching applications including synchronous DC-DC converters, motor control circuits, and battery management systems where low conduction losses and high efficiency are critical. Its 100 V rating and 80 A drain current capacity make it well suited for industrial power supplies, UPS systems, and electric vehicle auxiliary power modules. The D2PAK surface-mount package facilitates automated PCB assembly while providing efficient heat dissipation through the exposed drain tab.
Specifications
| Factory Lead Time | 13Weeks |
| YTEOL | 5.85 |
| Avalanche Energy Rating (Eas) | 350mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 0.015Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 210W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STB80NF10T4?
The STB80NF10T4 is rated for a minimum drain-source breakdown voltage of 100 V and a maximum drain current of 80 A. Its maximum drain-source on-resistance is 15 mΩ, and it supports an avalanche energy rating of 350 mJ, making it suitable for demanding high-current power conversion applications.
What package does the STB80NF10T4 use and how does it help with thermal management?
The STB80NF10T4 uses the D2PAK (TO-263AB) surface-mount package with the case connected to the drain terminal. The large exposed copper tab on the underside allows direct thermal coupling to PCB copper planes or heatsinks, providing efficient heat dissipation for high-power switching operation.
Does the STB80NF10T4 include a built-in body diode?
Yes, the STB80NF10T4 has a built-in body diode (configuration: SINGLE WITH BUILT-IN DIODE), which enables it to handle freewheeling current in inductive switching circuits such as motor drivers and synchronous buck converters without requiring an external schottky diode in many applications.
What is the factory lead time for the STB80NF10T4 and how can I purchase it?
The factory lead time for the STB80NF10T4 is approximately 13 weeks. It is available through authorized STMicroelectronics distributors worldwide. For time-sensitive projects, checking distributor stock and placing orders well in advance is recommended given the lead time.
What applications is the STB80NF10T4 best suited for?
The STB80NF10T4 is best suited for high-current power switching applications including synchronous DC-DC buck/boost converters, industrial motor drives, battery management systems, power factor correction (PFC) stages, and UPS power modules. Its low on-resistance of 15 mΩ and 80 A current rating directly translate to reduced power loss and improved system efficiency.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $2.5090 | $25.09 |
| 100+ | $1.7521 | $175.21 |
| 500+ | $1.4306 | $715.28 |
| 1000+ | $0.8318 | $831.80 |
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