STB33N60M6Alternatives & Equivalent Parts
About STB33N60M6
STB33N60M6 is a MOSFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STB33N60M6Source | STB33N60DM6 |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Package Type | Other | Other |
| Pin Count | 3 | 3 |
| Temperature Range | — | -55.0°C ~ 150.0°C |
| Price | $2.1178 | $1.6685 |
| Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE |
| Electrical Parameters | ||
| Factory Lead Time | 14 Weeks | 14 Weeks |
| YTEOL | 5 | 5 |
| JESD-609 Code | e3 | — |
| Peak Reflow Temperature (Cel) | 245 | NOT SPECIFIED |
| Terminal Finish | Matte Tin (Sn) - annealed | — |
| Date Of Intro | — | 2019-02-01 |
| Additional Feature | — | BULK: 1000 |
| Avalanche Energy Rating (Eas) | — | 360 mJ |
| Case Connection | — | DRAIN |
| Configuration | — | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | — | 600 V |
| Drain Current-Max (ID) | — | 25 A |
| Drain-source On Resistance-Max | — | 0.128 Ω |
| FET Technology | — | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | — | 3 pF |
| JEDEC-95 Code | — | TO-263AB |
| JESD-30 Code | — | R-PSSO-G2 |
| Number of Elements | — | 1 |
| Operating Mode | — | ENHANCEMENT MODE |
| Package Body Material | — | PLASTIC/EPOXY |
| Package Shape | — | RECTANGULAR |
| Package Style | — | SMALL OUTLINE |
| Polarity/Channel Type | — | N-CHANNEL |
| Power Dissipation-Max (Abs) | — | 190 W |
| Pulsed Drain Current-Max (IDM) | — | 80 A |
| Surface Mount | — | YES |
| Terminal Form | — | GULL WING |
| Terminal Position | — | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | — | NOT SPECIFIED |
| Transistor Application | — | SWITCHING |
| Transistor Element Material | — | SILICON |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering this alternative for STB33N60M6 — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 25A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Why Look for Alternatives?
Finding alternatives for STB33N60M6 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STB33N60M6 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STB33N60M6?
Known equivalents for STB33N60M6 include STB33N60DM6. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STB33N60M6?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STB33N60M6 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.