STB17N80K5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STB17N80K5 is an N-channel 800 V MDmesh K5 Power MOSFET from STMicroelectronics with 290 mΩ typical RDS(on) and 14 A continuous drain current. It uses advanced superjunction technology for high efficiency in power conversion. Available in D2PAK package, from $1.50 in stock worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB17N80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.8826(MOQ 10)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800 V breakdown voltage with only 290 mΩ RDS(on) for high efficiency power switching
- MDmesh K5 superjunction technology for superior figure-of-merit versus conventional MOSFETs
- D2PAK surface-mount package supporting 14 A continuous drain current with excellent thermal dissipation
Applications
STB17N80K5 is designed for high-voltage power conversion applications including offline SMPS, PFC boost converters, and LLC resonant converters in industrial and consumer power supplies. Its low RDS(on) of 290 mΩ and 800 V rating make it an excellent choice for server power supplies and solar inverter designs where high efficiency and reliability are critical. The D2PAK package provides robust heat dissipation for high-power density circuit layouts.
Specifications
| Manufacturer Package Code | D2PAK |
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| JESD-609 Code | e3 |
| Peak Reflow Temperature (Cel) | 245 |
| Terminal Finish | Matte Tin (Sn) |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of STB17N80K5 for power supply design?
STB17N80K5 is rated for 800 V drain-to-source voltage and 14 A continuous drain current with a typical RDS(on) of 290 mΩ at 10 V gate drive. These ratings make it suitable for high-voltage offline SMPS designs operating from universal AC input, including 85 V to 265 V AC mains.
How does MDmesh K5 superjunction technology improve efficiency in STB17N80K5 compared to standard MOSFETs?
MDmesh K5 technology reduces RDS(on) per unit area compared to conventional planar MOSFETs, delivering a 290 mΩ on-resistance at 800 V — a figure-of-merit significantly better than older generation devices. This results in lower conduction losses at 14 A and improved efficiency in hard-switching and resonant converter topologies.
Is STB17N80K5 suitable for PFC boost converter stages in industrial power supplies?
Yes, STB17N80K5 is well-suited for PFC boost converters operating at 400 V DC bus with switching frequencies up to 100 kHz. Its 800 V rating provides adequate voltage headroom, and its low gate charge reduces switching losses, helping achieve efficiency targets above 93% in continuous conduction mode PFC stages.
What thermal considerations apply when using STB17N80K5 in the D2PAK package on a PCB?
In the D2PAK package, STB17N80K5 has a maximum junction temperature of 150°C and a junction-to-case thermal resistance of approximately 1 °C/W. With a 14 A drain current and 290 mΩ RDS(on), conduction power dissipation is about 5.8 W, so adequate copper area or an external heatsink is needed to keep Tj below 150°C.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $3.6650 | $36.65 |
| 100+ | $2.6161 | $261.61 |
| 500+ | $2.3331 | $1166.55 |
| 1000+ | $2.0253 | $2025.31 |
| 2000+ | $1.9061 | $3812.26 |
| 4000+ | $1.8826 | $7530.36 |
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