STB140NF75T4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STB140NF75T4 is an N-channel STripFET III power MOSFET in D2PAK package rated 75 V drain-source breakdown and 120 A continuous drain current with 7.5 mΩ maximum RDS(on). Features avalanche rating of 750 mJ and built-in body diode for robust switching. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB140NF75T4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.4881(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB140NF75T4?
- Ultra-low 7.5 mΩ maximum RDS(on) at 120 A drain current minimizes conduction losses in high-current motor drive and DC-DC converter topologies
- 75 V VDS breakdown with 120 A continuous drain current capability in a compact D2PAK footprint for high-power density switching applications
- Avalanche rated at 750 mJ absorbs inductive load energy transients during unclamped inductive switching, improving reliability in motor and solenoid drive circuits
- STripFET III technology with built-in body diode enables synchronous rectification in buck converters without an external freewheeling diode
What is STB140NF75T4 used for?
The STB140NF75T4 is designed for high-current motor drive inverters, synchronous buck regulators, and battery management systems operating from 12 V to 48 V bus rails where low conduction losses and high peak currents are required. Its 750 mJ avalanche energy rating makes it suitable for automotive alternator field drivers, power tool motor controllers, and industrial servo drives where unclamped inductive switching occurs during brake or fault conditions. The D2PAK package with tab-mounted drain enables direct attachment to PCB copper planes for efficient heat spreading without an external heatsink in many medium-power applications.
What are the specifications of STB140NF75T4?
| Factory Lead Time | 13Weeks |
| YTEOL | 5.9 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 750mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 75V |
| Drain Current-Max (ID) | 120A |
| Drain-source On Resistance-Max | 0.0075Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 310W |
| Pulsed Drain Current-Max (IDM) | 480A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STB140NF75T4 datasheet?
STB140NF75T4 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB140NF75T4?
Compatible alternatives and drop-in replacements for STB140NF75T4:
suggested
suggested
suggested
suggested
Frequently Asked Questions
What is the maximum drain current and RDS(on) of the STB140NF75T4, and how do these specs benefit a motor driver design?
The STB140NF75T4 is rated for 120 A continuous drain current with a maximum RDS(on) of 7.5 mΩ at VGS = 10 V. In a 48 V brushless DC motor drive carrying 80 A phase current, this 7.5 mΩ RDS(on) contributes only 48 W of conduction loss at full load, significantly less than competing devices with 12 mΩ to 15 mΩ RDS(on) operating at the same current.
What does the 750 mJ avalanche energy rating mean for the STB140NF75T4 in inductive load switching applications?
The 750 mJ avalanche energy rating (Eas) means the STB140NF75T4 can absorb 750 mJ of energy in a single unclamped inductive switching event without breakdown. For a motor drive switching a 100 µH stator inductance at 30 A peak current, the inductive energy is 0.5 × 100 µH × 30² A = 45 mJ, leaving a 16:1 safety margin before avalanche destruction, which is critical for drives operating without clamping Zener diodes.
In which automotive or industrial switching converter topologies is the STB140NF75T4 most commonly specified?
The STB140NF75T4 is commonly specified as the low-side switch in synchronous buck converters for 12 V to 48 V automotive battery management systems, as the main switch in phase-leg inverters for brushless motor drives up to 5 kW, and as the pass transistor in high-current linear regulators for industrial 24 V power supplies. Its 75 V rating covers both 12 V and 24 V battery systems with sufficient margin for load dump transients up to 60 V.
How does the D2PAK package of the STB140NF75T4 affect PCB thermal design compared to a TO-220 through-hole package?
The D2PAK (TO-263) is a surface-mount package with a large exposed metal tab connected to the drain, soldered directly onto a PCB copper area. This allows thermal energy to spread through the PCB copper plane rather than requiring an external heatsink clip. For the STB140NF75T4 at 120 A and 7.5 mΩ, conduction power is approximately 108 W, requiring a PCB copper area of at least 20 cm² or an attached heatsink to maintain junction temperature below 175°C in still-air conditions.
What is the significance of the built-in body diode in the STB140NF75T4 for synchronous rectification?
The STB140NF75T4 integrates an inherent body diode between drain and source with a forward voltage drop of approximately 1 V. In a synchronous buck converter, this body diode conducts during the dead time between high-side turn-off and low-side turn-on, preventing cross-conduction. The body diode eliminates the need for an external Schottky freewheeling diode in many designs, reducing BOM cost by one component and simplifying PCB layout at 120 A power levels.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6980 | $1.70 |
| 2000+ | $1.5974 | $3194.86 |
| 3000+ | $1.5625 | $4687.50 |
| 4000+ | $1.5432 | $6172.84 |
| 8000+ | $1.5151 | $12121.20 |
| 16000+ | $1.4881 | $23809.60 |
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