SSM3K335R,LF(B Toshiba MOSFET (N-Channel) (SO Transistor Flat Lead) In Stock
Toshiba SSM3K335R is an N-channel enhancement-mode MOSFET in a SOT-23F 3-pin flat-lead package with a 30 V drain-source breakdown voltage, 6 A maximum drain current, and ultra-low 38 mΩ on-resistance. Available from stock with worldwide shipping.
- Manufacturer
- Toshiba
- Package
- SO Transistor Flat Lead
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- SSM3K335R,LF(B Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 30 V drain-source breakdown voltage and 6 A drain current (ID) support a wide range of DC-DC converter and load switch designs
- Ultra-low 38 mΩ (0.038 Ω) drain-source on-resistance minimizes conduction losses in battery-powered and portable applications
- Built-in body diode enables synchronous rectification and freewheeling current paths without an external diode
- Compact SOT-23F (R-PDSO-F3) 3-pin flat-lead package reduces PCB footprint in space-constrained designs
Applications
The SSM3K335R is used in portable consumer electronics, battery management circuits, and DC-DC converters where a compact 30 V / 6 A N-channel MOSFET with low on-resistance is needed to maximize power efficiency. Its ultra-low 38 mΩ RDS(on) makes it suitable for synchronous buck regulators and load switch circuits in smartphones, wearables, and IoT devices operating from single-cell Li-ion batteries. The SOT-23F package simplifies PCB layout in space-constrained designs such as USB power delivery modules and motor driver boards.
Specifications
| YTEOL | 5.4 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 0.038Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 20pF |
| JESD-30 Code | R-PDSO-F3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1W |
| Pulsed Drain Current-Max (IDM) | 14A |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | SO Transistor Flat Lead |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the SSM3K335R for DC-DC converter design?
The SSM3K335R is rated for a 30 V minimum drain-source breakdown voltage and a maximum drain current of 6 A, making it well suited for synchronous buck converters and load switches operating from 5 V to 24 V input rails in portable and industrial power applications.
How does the SSM3K335R's 38 mΩ on-resistance benefit battery-operated devices?
The 38 mΩ drain-source on-resistance (RDS(on) max) results in low conduction losses even at 6 A drain current, reducing heat dissipation and extending battery life in single-cell Li-ion powered devices such as smartphones, wearables, and IoT sensors that use N-channel MOSFET-based power switches.
Which PCB layouts benefit from the SSM3K335R's SOT-23F flat-lead package?
The SOT-23F (R-PDSO-F3) is a 3-pin flat-lead surface-mount package with a very small footprint, enabling tight component spacing on dense PCBs such as USB-C power delivery boards, portable chargers, and motor driver modules where the 30 V / 6 A MOSFET must fit within minimal board area.
Does the SSM3K335R include a built-in diode, and what role does it play in switching circuits?
Yes, the SSM3K335R includes a built-in body diode as part of its single-element N-channel MOSFET configuration. This diode provides a freewheeling current path in synchronous buck and boost converters, eliminating the need for an external Schottky diode and reducing component count in 30 V / 6 A switching power stages.
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