SSM3K335R,LF(B Toshiba MOSFET (N-Channel) (SO Transistor Flat Lead) In Stock

Name: SSM3K335R,LF(B
Brand: Toshiba
SKU: SSM3K335R,LF(B
Availability: InStock

Toshiba SSM3K335R is an N-channel enhancement-mode MOSFET in a SOT-23F 3-pin flat-lead package with a 30 V drain-source breakdown voltage, 6 A maximum drain current, and ultra-low 38 mΩ on-resistance. Available from stock with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified Jun 2026

Package / Visual Reference

SSM3K335R,LF(BSO Transistor Flat Lead

Quick Facts

Manufacturer: Toshiba
Package: SO Transistor Flat Lead
Pin Count: 3
Lifecycle: ACTIVE
Datasheet: SSM3K335R,LF(B Datasheet PDF
Category: MOSFET (N-Channel)
Price: From $0.1088(MOQ 1)
Temp Range: ?°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of SSM3K335R,LF(B?

30 V drain-source breakdown voltage and 6 A drain current (ID) support a wide range of DC-DC converter and load switch designs
Ultra-low 38 mΩ (0.038 Ω) drain-source on-resistance minimizes conduction losses in battery-powered and portable applications
Built-in body diode enables synchronous rectification and freewheeling current paths without an external diode
Compact SOT-23F (R-PDSO-F3) 3-pin flat-lead package reduces PCB footprint in space-constrained designs

What is SSM3K335R,LF(B used for?

The SSM3K335R is used in portable consumer electronics, battery management circuits, and DC-DC converters where a compact 30 V / 6 A N-channel MOSFET with low on-resistance is needed to maximize power efficiency. Its ultra-low 38 mΩ RDS(on) makes it suitable for synchronous buck regulators and load switch circuits in smartphones, wearables, and IoT devices operating from single-cell Li-ion batteries. The SOT-23F package simplifies PCB layout in space-constrained designs such as USB power delivery modules and motor driver boards.

What are the specifications of SSM3K335R,LF(B?

YTEOL	5.4
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30V
Drain Current-Max (ID)	6A
Drain-source On Resistance-Max	0.038Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	20pF
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	1W
Pulsed Drain Current-Max (IDM)	14A
Surface Mount	YES
Terminal Form	FLAT
Terminal Position	DUAL
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Package	SO Transistor Flat Lead

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
ECCN	EAR99

Where can I find the SSM3K335R,LF(B datasheet?

SSM3K335R,LF(B Datasheet Download

Official datasheet from Toshiba

What are equivalent replacements for SSM3K335R,LF(B?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the SSM3K335R for DC-DC converter design?

The SSM3K335R is rated for a 30 V minimum drain-source breakdown voltage and a maximum drain current of 6 A, making it well suited for synchronous buck converters and load switches operating from 5 V to 24 V input rails in portable and industrial power applications.

How does the SSM3K335R's 38 mΩ on-resistance benefit battery-operated devices?

The 38 mΩ drain-source on-resistance (RDS(on) max) results in low conduction losses even at 6 A drain current, reducing heat dissipation and extending battery life in single-cell Li-ion powered devices such as smartphones, wearables, and IoT sensors that use N-channel MOSFET-based power switches.

Which PCB layouts benefit from the SSM3K335R's SOT-23F flat-lead package?

The SOT-23F (R-PDSO-F3) is a 3-pin flat-lead surface-mount package with a very small footprint, enabling tight component spacing on dense PCBs such as USB-C power delivery boards, portable chargers, and motor driver modules where the 30 V / 6 A MOSFET must fit within minimal board area.

Does the SSM3K335R include a built-in diode, and what role does it play in switching circuits?

Yes, the SSM3K335R includes a built-in body diode as part of its single-element N-channel MOSFET configuration. This diode provides a freewheeling current path in synchronous buck and boost converters, eliminating the need for an external Schottky diode and reducing component count in 30 V / 6 A switching power stages.

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AvailabilityIn Stock

Reference Price (USD)

From $0.1088

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
1+	$0.6600	$0.66
20+	$0.2970	$5.94
169+	$0.1980	$33.46
400+	$0.1959	$78.36
695+	$0.1088	$75.62

pcs

Unit price: $0.6600 · Total: $0.66

In Stock · 24h Response · Worldwide Shipping

Direct Contact

WhatsApp Inquiry Email RFQ

Lead Time3-7 business days

MOQFrom 1 piece

ShippingDHL / FedEx / UPS

OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”

Marco Rossi

CTO, AutoDrive Systems, Italy

SSM3K335R,LF(B Toshiba MOSFET (N-Channel) (SO Transistor Flat Lead) In Stock

What are the key features of SSM3K335R,LF(B?

What is SSM3K335R,LF(B used for?

What are the specifications of SSM3K335R,LF(B?

Compliance & Regulatory

Where can I find the SSM3K335R,LF(B datasheet?

What are equivalent replacements for SSM3K335R,LF(B?

Frequently Asked Questions

What are the key voltage and current ratings of the SSM3K335R for DC-DC converter design?

How does the SSM3K335R's 38 mΩ on-resistance benefit battery-operated devices?

Which PCB layouts benefit from the SSM3K335R's SOT-23F flat-lead package?

Does the SSM3K335R include a built-in diode, and what role does it play in switching circuits?

Related Guides

C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC

STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security

STM32H753VIT6 High-Performance MCU Design Guide

STM32H753ZIT6 Selection Guide for High-Performance Embedded Systems

Why Buy from FindMyChip

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