SQ2325ES-T1_GE3 Vishay MOSFET (P-Channel) (SOT23 (3-Pin)) In Stock
Vishay SQ2325ES-T1_GE3 is a P-Channel MOSFET in SOT-23 3-pin package with 150 V breakdown voltage and 1.77 Ω on-resistance. Designed for single-channel switching with built-in diode. Available in tape-and-reel packaging for automated assembly at competitive prices with worldwide shipping.
- Manufacturer
- Vishay
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SQ2325ES-T1_GE3 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.2182(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- P-Channel MOSFET with 150 V DS breakdown voltage and 0.84 A max drain current for medium-voltage switching
- Ultra-compact SOT-23 3-pin package with built-in protection diode for space-constrained designs
- Low feedback capacitance (Crss) of 22 pF enabling fast switching with minimal gate drive losses
Applications
The SQ2325ES-T1_GE3 is ideal for load switching, battery protection, and power management circuits in portable consumer electronics and industrial equipment operating up to 150 V. Its compact SOT-23 package and built-in diode simplify PCB design in high-side switching applications. The combination of low on-resistance (1.77 Ω) and small form factor makes it suitable for power sequencing and reverse polarity protection circuits.
Specifications
| Reach Compliance Code | Compliant |
| Factory Lead Time | 15Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 1.12mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 150V |
| Drain Current-Max (ID) | 0.84A |
| Drain-source On Resistance-Max | 1.77Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 22pF |
| JEDEC-95 Code | TO-236 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 3W |
| Pulsed Drain Current-Max (IDM) | 2A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 34ns |
| Turn-on Time-Max (ton) | 30ns |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Germany |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the SQ2325ES-T1_GE3?
The SQ2325ES-T1_GE3 is rated at 150 V DS breakdown voltage with a maximum drain current of 0.84 A and drain-source on-resistance of 1.77 Ω, making it suitable for medium-voltage P-channel switching applications.
How does the built-in diode in the SQ2325ES-T1_GE3 benefit circuit design?
The integrated protection diode eliminates the need for an external Schottky diode in reverse polarity protection and inductive load switching circuits, saving board space and reducing BOM cost in the compact SOT-23 3-pin package.
In which applications is the SQ2325ES-T1_GE3 a better choice than larger-package MOSFETs?
For designs requiring 150 V P-channel switching at currents up to 0.84 A in constrained PCB areas, the SOT-23 package of the SQ2325ES-T1_GE3 offers a smaller footprint than SOT-223 or D-PAK alternatives, ideal for portable power management modules.
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About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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MOSFET (P-Channel)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4391 | $0.44 |
| 10+ | $0.2182 | $2.18 |
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