SQ2318AES-T1_GE3Alternatives & Equivalent Parts

SQ2318AES-T1_GE3 is marked OBSOLETE. Compare the equivalents below, check each part's lifecycle, and request a quote on a suitable replacement.

About SQ2318AES-T1_GE3

SQ2318AES-T1_GE3 is a MOSFET (N-Channel) component manufactured by Vishay. It comes in a SOT23 (3-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSQ2318AES-T1_GE3SourceMER1S0515SCPLZ4V7B-HG3/H
ManufacturerVishayMurata ElectronicsVishay
Package TypeSOT23 (3-Pin)OtherSmall Outline Diode Flat Lead
Pin Count342
Temperature Range-55.0°C ~ 175.0°C-40.0°C ~ 85.0°C~ 150.0°C
Price$0.1800$4.4400$0.0375
StockIn StockIn StockIn Stock
LifecycleOBSOLETEACTIVEOBSOLETE
Electrical Parameters
Reach Compliance CodeCompliant
YTEOL070
Avalanche Energy Rating (Eas)8 mJ
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE
DS Breakdown Voltage-Min40 V
Drain Current-Max (ID)8 A
Drain-source On Resistance-Max0.031 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)46 pF
JEDEC-95 CodeTO-236ABDO-219AC
JESD-30 CodeR-PDSO-G3R-XSIP-T4R-PDSO-F2
JESD-609 Codee3e3e3
Number of Elements11
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYUNSPECIFIEDPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINEIN-LINESMALL OUTLINE
Peak Reflow Temperature (Cel)260260
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)32 A
Surface MountYESNOYES
Terminal FinishMatte Tin (Sn)Matte Tin (Sn) - with Nickel (Ni) barrierMatte Tin (Sn)
Terminal FormGULL WINGTHROUGH-HOLEFLAT
Terminal PositionDUALSINGLEDUAL
Time@Peak Reflow Temperature-Max (s)1030
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)26.5 ns
Turn-on Time-Max (ton)24 ns
Factory Lead Time12 Weeks
Date Of Intro2020-06-052017-03-21
Analog IC - Other TypeDC-DC REGULATED POWER SUPPLY MODULE
ApprovalsUL
Efficiency (Main Output)87.5%
Input Voltage-Max5.5 V
Input Voltage-Min4.5 V
Input Voltage-Nom5 V
Line Regulation-Max1.1%
Load Regulation-Max5%
Number of Functions1
Number of Outputs1
Output Current-Max0.067 A
Output Voltage-Nom15 V
Qualification StatusNot Qualified
TechnologyHYBRIDZENER
Temperature GradeINDUSTRIAL
Terminal Pitch2.54 mm
Total Power Output-Max1 W
Trim/Adjustable OutputNO
Diode Element MaterialSILICON
Diode TypeZENER DIODE
PolarityUNIDIRECTIONAL
Power Dissipation-Max0.96 W
Reference StandardAEC-Q101; IEC-61000-4-2, 4-5
Reference Voltage-Nom4.7 V
Voltage Tol-Max2.67%
Working Test Current20 mA

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 2 alternatives for SQ2318AES-T1_GE3 — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for SQ2318AES-T1_GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating SQ2318AES-T1_GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to SQ2318AES-T1_GE3?

Known equivalents for SQ2318AES-T1_GE3 include MER1S0515SC, PLZ4V7B-HG3/H. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of SQ2318AES-T1_GE3?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify SQ2318AES-T1_GE3 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.