SIS412DN-T1-GE3Alternatives & Equivalent Parts

About SIS412DN-T1-GE3

SIS412DN-T1-GE3 is a MOSFET (N-Channel) component manufactured by Vishay. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSIS412DN-T1-GE3SourceBQ24618RGETTL2575-12IKTTR
ManufacturerVishayTexas InstrumentsTexas Instruments
Package TypeOtherQuad Flat No-LeadOther
Pin Count8244
Temperature Range~ 150.0°C-40.0°C ~ 85.0°C-40.0°C ~ 125.0°C
Price$0.2168$3.6750$0.8038
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVE
Electrical Parameters
YTEOL51515
Avalanche Energy Rating (Eas)1.25 mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)8.7 A
Drain-source On Resistance-Max0.024 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeS-XDSO-C5S-PQCC-N24R-PSSO-G5
JESD-609 Codee3e4e3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialUNSPECIFIEDPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeSQUARESQUARERECTANGULAR
Package StyleSMALL OUTLINECHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILESMALL OUTLINE
Peak Reflow Temperature (Cel)260260245
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)15.6 W
Pulsed Drain Current-Max (IDM)30 A
Qualification StatusNot QualifiedNot QualifiedNot Qualified
Surface MountYESYESYES
Terminal FinishMatte Tin (Sn) - annealedNickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn)
Terminal FormC BENDNO LEADGULL WING
Terminal PositionDUALQUADSINGLE
Time@Peak Reflow Temperature-Max (s)403030
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Pbfree CodeYesYes
Analog IC - Other TypeBATTERY CHARGE CONTROLLERSWITCHING REGULATOR
Control TechniquePULSE WIDTH MODULATION
Input Voltage-Max28 V40 V
Input Voltage-Min4.7 V4.75 V
Number of Functions11
Output Voltage-Max28 V12 V
Output Voltage-Min4.8 V12 V
Package Equivalence CodeLCC24,.16SQ,20SMSIP5H,.6,67TB
Supply Voltage-Max (Vsup)28 V
Supply Voltage-Min (Vsup)4.7 V
Switcher ConfigurationBUCKBUCK
Switching Frequency-Max600 kHz58 kHz
TechnologyNMOS
Terminal Pitch0.5 mm1.7 mm
Control ModeVOLTAGE-MODE
Input Voltage-Nom25 V
Number of Outputs1
Output Current-Max1 A
Output Voltage-Nom12 V
Temperature GradeAUTOMOTIVE
## TL2575-12IKTTR Alternates Showing resultsImage

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 2 alternatives for SIS412DN-T1-GE3 — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for SIS412DN-T1-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating SIS412DN-T1-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to SIS412DN-T1-GE3?

Known equivalents for SIS412DN-T1-GE3 include BQ24618RGET, TL2575-12IKTTR. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of SIS412DN-T1-GE3?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify SIS412DN-T1-GE3 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.