SIRA62DP-T1-RE3 Vishay MOSFET (N-Channel) (Other) In Stock

SIRA62DP-T1-RE3 is a Vishay N-channel power MOSFET rated at 30V, 80A with an ultra-low RDS(on) of 1.2 mΩ maximum in an SOP-8 package. It includes a built-in Schottky-type body diode and 45 mJ avalanche energy rating for robust synchronous rectification and DC-DC converter applications. Ideal for high-current point-of-load power conversion, motor drivers, and server power supplies.

NOT RECOMMENDEDMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
SIRA62DP-T1-RE3Other
Quick Facts
Manufacturer
Vishay
Package
Other
Pin Count
11
Lifecycle
NOT RECOMMENDED
Category
MOSFET (N-Channel)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Ultra-low RDS(on) of 1.2 mΩ maximum at full gate drive, minimizing conduction losses in high-current 30V applications
  • 80A maximum drain current supporting high-power synchronous buck and motor drive designs
  • 45 mJ avalanche energy rating providing robust protection against inductive switching transients
  • Built-in drain-connected diode enabling efficient synchronous rectification without external diodes
  • SOP-8 surface-mount package balancing power density with easy PCB integration in DC-DC converters

Applications

SIRA62DP-T1-RE3 is designed for high-current synchronous buck converters in server and networking power supplies where 30V bus voltage must be regulated to point-of-load rails with minimal switching losses. Its 1.2 mΩ RDS(on) and 80A current capability make it effective for multi-phase CPU VRMs and GPU power stages operating at high switching frequencies. Motor drive applications in robotics and industrial automation also benefit from its robust 45 mJ avalanche energy rating and integrated body diode for bi-directional current handling.

Specifications

Factory Lead Time16Weeks
Date Of Intro2017-12-19
YTEOL5.3
Avalanche Energy Rating (Eas)45mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30V
Drain Current-Max (ID)80A
Drain-source On Resistance-Max0.0012Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)202pF
JESD-30 CodeR-PDSO-F5
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)65.7W
Pulsed Drain Current-Max (IDM)300A
Surface MountYES
Terminal FinishTin (Sn)
Terminal FormFLAT
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)40
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)72ns
Turn-on Time-Max (ton)66ns
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99

Datasheet

SIRA62DP-T1-RE3 Datasheet Download

Official datasheet from Vishay

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

How does SIRA62DP-T1-RE3's 1.2 mΩ RDS(on) benefit a 40A synchronous buck converter design?

At 40A load current, the conduction loss in SIRA62DP-T1-RE3 is P = I² x RDS(on) = 40² x 0.0012 = 1.92W per MOSFET. This ultra-low 1.2 mΩ maximum RDS(on) keeps thermal dissipation manageable in SOP-8 package, enabling high-efficiency point-of-load converters at 30V input with efficiency gains of 1-2% over MOSFETs with 3-5 mΩ RDS(on) at the same current level.

What avalanche energy capability does SIRA62DP-T1-RE3 provide for inductive load switching in motor drives?

SIRA62DP-T1-RE3 is rated for 45 mJ of single-pulse avalanche energy (EAS), which is the energy the MOSFET can safely absorb when an inductive load forces its drain voltage above the 30V breakdown threshold during turn-off. This 45 mJ rating provides sufficient headroom for motor drive half-bridge circuits switching inductive loads of several hundred microhenries, protecting the device from avalanche breakdown failure in real motor winding commutation events.

Can SIRA62DP-T1-RE3 be used as a high-side switch in a 12V to 24V automotive power distribution module?

SIRA62DP-T1-RE3 is an N-channel MOSFET with a 30V VDS rating, which covers a 12V to 24V automotive bus. However, using it as a high-side switch requires a gate driver that can boost the gate voltage at least 4.5V above the source (drain-connected at load), typically needing a bootstrap or charge pump circuit to drive the gate above 24V + 4.5V = 28.5V. Its 80A current rating and 1.2 mΩ RDS(on) make it well suited for load switching, provided the gate drive circuitry is correctly designed.

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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy