SIRA62DP-T1-RE3 Vishay MOSFET (N-Channel) (Other) In Stock
SIRA62DP-T1-RE3 is a Vishay N-channel power MOSFET rated at 30V, 80A with an ultra-low RDS(on) of 1.2 mΩ maximum in an SOP-8 package. It includes a built-in Schottky-type body diode and 45 mJ avalanche energy rating for robust synchronous rectification and DC-DC converter applications. Ideal for high-current point-of-load power conversion, motor drivers, and server power supplies.
- Manufacturer
- Vishay
- Package
- Other
- Pin Count
- 11
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- SIRA62DP-T1-RE3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low RDS(on) of 1.2 mΩ maximum at full gate drive, minimizing conduction losses in high-current 30V applications
- 80A maximum drain current supporting high-power synchronous buck and motor drive designs
- 45 mJ avalanche energy rating providing robust protection against inductive switching transients
- Built-in drain-connected diode enabling efficient synchronous rectification without external diodes
- SOP-8 surface-mount package balancing power density with easy PCB integration in DC-DC converters
Applications
SIRA62DP-T1-RE3 is designed for high-current synchronous buck converters in server and networking power supplies where 30V bus voltage must be regulated to point-of-load rails with minimal switching losses. Its 1.2 mΩ RDS(on) and 80A current capability make it effective for multi-phase CPU VRMs and GPU power stages operating at high switching frequencies. Motor drive applications in robotics and industrial automation also benefit from its robust 45 mJ avalanche energy rating and integrated body diode for bi-directional current handling.
Specifications
| Factory Lead Time | 16Weeks |
| Date Of Intro | 2017-12-19 |
| YTEOL | 5.3 |
| Avalanche Energy Rating (Eas) | 45mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 0.0012Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 202pF |
| JESD-30 Code | R-PDSO-F5 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 65.7W |
| Pulsed Drain Current-Max (IDM) | 300A |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 72ns |
| Turn-on Time-Max (ton) | 66ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does SIRA62DP-T1-RE3's 1.2 mΩ RDS(on) benefit a 40A synchronous buck converter design?
At 40A load current, the conduction loss in SIRA62DP-T1-RE3 is P = I² x RDS(on) = 40² x 0.0012 = 1.92W per MOSFET. This ultra-low 1.2 mΩ maximum RDS(on) keeps thermal dissipation manageable in SOP-8 package, enabling high-efficiency point-of-load converters at 30V input with efficiency gains of 1-2% over MOSFETs with 3-5 mΩ RDS(on) at the same current level.
What avalanche energy capability does SIRA62DP-T1-RE3 provide for inductive load switching in motor drives?
SIRA62DP-T1-RE3 is rated for 45 mJ of single-pulse avalanche energy (EAS), which is the energy the MOSFET can safely absorb when an inductive load forces its drain voltage above the 30V breakdown threshold during turn-off. This 45 mJ rating provides sufficient headroom for motor drive half-bridge circuits switching inductive loads of several hundred microhenries, protecting the device from avalanche breakdown failure in real motor winding commutation events.
Can SIRA62DP-T1-RE3 be used as a high-side switch in a 12V to 24V automotive power distribution module?
SIRA62DP-T1-RE3 is an N-channel MOSFET with a 30V VDS rating, which covers a 12V to 24V automotive bus. However, using it as a high-side switch requires a gate driver that can boost the gate voltage at least 4.5V above the source (drain-connected at load), typically needing a bootstrap or charge pump circuit to drive the gate above 24V + 4.5V = 28.5V. Its 80A current rating and 1.2 mΩ RDS(on) make it well suited for load switching, provided the gate drive circuitry is correctly designed.
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