SIHU5N50D-GE3 Vishay MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
SIHU5N50D-GE3 is a Vishay MOSFET (N-Channel) for load switching, amplification, level shifting, and discrete power stages. It combines 0°C to 0°C with Transistor Outline, Vertical with 3 pins. FindMyChip supports technical sourcing, stock checks, and worldwide shipping for this part.
- Manufacturer
- Vishay
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SIHU5N50D-GE3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4161(MOQ 375)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 0°C to 0°C key electrical or mechanical rating from supplier data
- 500 V additional operating specification for design checks
- Transistor Outline, Vertical with 3 pins package information for PCB and assembly planning
- MOSFET (N-Channel) classification for BOM search, sourcing, and alternates review
- Manufacturer-listed Vishay part number for traceable procurement workflows
Applications
SIHU5N50D-GE3 is suited to load switching, amplification, level shifting, and discrete power stages, especially when engineers need 0°C to 0°C and a traceable Vishay sourcing path. It supports repair, prototype, and production purchasing workflows where package, lifecycle, and parameter checks must be reviewed before release.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 28.8mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 5.3A |
| Drain-source On Resistance-Max | 1.5Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-251AA |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 10A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Which design requirements make SIHU5N50D-GE3 a good fit for mosfet (n-channel) applications?
SIHU5N50D-GE3 is a Vishay MOSFET (N-Channel) that suits load switching, amplification, level shifting, and discrete power stages when the design needs 0°C to 0°C. Engineers should compare the captured supplier parameters with the final datasheet before release.
How should engineers account for package or assembly constraints on SIHU5N50D-GE3?
The available package data lists Transistor Outline, Vertical with 3 pins, and the relevant rating includes 500 V. Check footprint, thermal margin, and assembly notes against the approved datasheet before committing the PCB.
What should procurement teams confirm before quoting SIHU5N50D-GE3 for production builds?
Procurement should confirm quantity, date code, lifecycle status, and acceptable alternates for SIHU5N50D-GE3. The sourcing review should include 0°C to 0°C so engineering and purchasing evaluate the same requirement.
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Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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MOSFET (P-Channel)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 375+ | $0.6580 | $246.75 |
| 750+ | $0.6170 | $462.75 |
| 1875+ | $0.5610 | $1051.88 |
| 3000+ | $0.4161 | $1248.18 |
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