SIHG80N60EF-GE3 Vishay MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
Vishay SIHG80N60EF-GE3 is an N-channel power MOSFET rated at 600 V drain-source breakdown voltage and 80 A drain current with 32 mΩ on-resistance and 1142 mJ avalanche energy. It features a built-in diode in a vertical transistor outline package. From $8.00 in stock with worldwide shipping.
- Manufacturer
- Vishay
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- SIHG80N60EF-GE3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $8.8588(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SIHG80N60EF-GE3?
- 600 V DS breakdown voltage with 80 A continuous drain current for high-power switching applications
- Ultra-low 32 mΩ drain-source on-resistance (Rds(on)) reduces conduction losses in PFC and inverter designs
- 1142 mJ avalanche energy rating (Eas) provides robust protection against inductive kickback in motor drive circuits
What is SIHG80N60EF-GE3 used for?
The SIHG80N60EF-GE3 is designed for high-efficiency power conversion in switch-mode power supplies, PFC boost converters, and solar inverters operating at up to 600 V bus voltages. Its low 32 mΩ on-resistance and high 80 A current rating make it ideal for electric vehicle on-board chargers and industrial motor drives. The built-in body diode and 1142 mJ avalanche energy rating ensure reliable operation in demanding inductive switching environments.
What are the specifications of SIHG80N60EF-GE3?
| Factory Lead Time | 20Weeks |
| Date Of Intro | 2018-09-17 |
| YTEOL | 6.22 |
| Avalanche Energy Rating (Eas) | 1142mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 0.032Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8pF |
| JEDEC-95 Code | TO-247AC |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 520W |
| Pulsed Drain Current-Max (IDM) | 254A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 660ns |
| Turn-on Time-Max (ton) | 305ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the SIHG80N60EF-GE3 datasheet?
SIHG80N60EF-GE3 Datasheet DownloadOfficial datasheet from Vishay
What are equivalent replacements for SIHG80N60EF-GE3?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the 32 mΩ on-resistance of SIHG80N60EF-GE3 compare to typical 600 V MOSFETs in terms of conduction losses?
The SIHG80N60EF-GE3 achieves a maximum Rds(on) of 32 mΩ at full gate drive, which is competitive for a 600 V, 80 A N-channel MOSFET. At 80 A drain current, conduction power loss is approximately 205 W theoretically under DC conditions, making thermal management critical. In pulsed or high-frequency switching applications such as PFC and inverters, average conduction losses are substantially lower, enabling efficient high-power designs.
For a 3 kW solar inverter design, can SIHG80N60EF-GE3 handle the required switching stresses?
Yes, the SIHG80N60EF-GE3 is well-suited for 3 kW solar inverter designs with 400 V DC bus and peak currents up to 80 A. The 600 V DS breakdown voltage provides safety margin above typical 400 V bus, and the 1142 mJ avalanche energy rating protects against transient overvoltage spikes from inductive loads. The low 8 pF feedback capacitance (Crss) also supports clean switching transitions at higher frequencies.
What is the avalanche energy rating of SIHG80N60EF-GE3 and why does it matter for motor drive protection?
The SIHG80N60EF-GE3 is rated for 1142 mJ avalanche energy (Eas), which quantifies how much energy the device can absorb during an unclamped inductive switching event without failure. In motor drive and inverter circuits, inductive kickback from motor windings can produce voltage spikes beyond 600 V; a high Eas rating means the MOSFET can absorb these spikes repeatedly. This makes SIHG80N60EF-GE3 a robust choice for industrial motor controllers and servo drives.
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Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.9970 | $10.00 |
| 10+ | $9.8320 | $98.32 |
| 25+ | $9.6680 | $241.70 |
| 100+ | $9.6262 | $962.62 |
| 500+ | $8.8588 | $4429.38 |
| 8000+ | $8.8588 | $70870.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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