SIHD6N80AE-GE3Alternatives & Equivalent Parts
About SIHD6N80AE-GE3
SIHD6N80AE-GE3 is a MOSFET (N-Channel) component manufactured by Vishay. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SIHD6N80AE-GE3Source | TPS76350DBVR | 865060663015 | EEEHC1C101XP | EEE-HC1C101XP |
|---|---|---|---|---|---|
| Manufacturer | Vishay | Texas Instruments | Würth Elektronik | Panasonic | Panasonic |
| Package Type | Other | SOT23 (5-Pin) | Capacitor Al Electrolytic | Other | Other |
| Pin Count | 3 | 5 | 2 | 2 | 2 |
| Temperature Range | -55.0°C ~ 150.0°C | — | -55.0°C ~ 105.0°C | -40.0°C ~ 105.0°C | — |
| Price | $0.5712 | $0.2447 | $1.6600 | $0.1140 | $0.0673 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||
| Factory Lead Time | 20 Weeks | — | — | 21 Weeks | — |
| YTEOL | 7 | 15 | 15 | 7 | — |
| Additional Feature | AVALANCHE ENERGY RATED | — | — | — | — |
| Avalanche Energy Rating (Eas) | 20.3 mJ | — | — | — | — |
| Case Connection | DRAIN | — | — | — | — |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | — | — | — |
| DS Breakdown Voltage-Min | 800 V | — | — | — | — |
| Drain Current-Max (ID) | 5 A | — | — | — | — |
| Drain-source On Resistance-Max | 0.95 Ω | — | — | — | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — | — |
| Feedback Cap-Max (Crss) | 4 pF | — | — | — | — |
| JEDEC-95 Code | TO-252AA | — | — | — | — |
| JESD-30 Code | R-PSSO-G2 | R-PDSO-G5 | — | — | — |
| Number of Elements | 1 | — | — | — | — |
| Operating Mode | ENHANCEMENT MODE | — | — | — | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | — | — | — |
| Package Shape | RECTANGULAR | RECTANGULAR | CYLINDRICAL PACKAGE | CYLINDRICAL PACKAGE | — |
| Package Style | SMALL OUTLINE | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | SMT | SMT | — |
| Polarity/Channel Type | N-CHANNEL | — | — | — | — |
| Power Dissipation-Max (Abs) | 62.5 W | — | — | — | — |
| Pulsed Drain Current-Max (IDM) | 10 A | — | — | — | — |
| Surface Mount | YES | YES | YES | YES | — |
| Terminal Form | GULL WING | GULL WING | — | — | — |
| Terminal Position | SINGLE | DUAL | — | — | — |
| Transistor Application | SWITCHING | — | — | — | — |
| Transistor Element Material | SILICON | — | — | — | — |
| Turn-off Time-Max (toff) | 44 ns | — | — | — | — |
| Turn-on Time-Max (ton) | 52 ns | — | — | — | — |
| Pbfree Code | — | Yes | — | Yes | — |
| Adjustability | — | FIXED | — | — | — |
| Dropout Voltage1-Max | — | 0.3 V | — | — | — |
| Dropout Voltage1-Nom | — | 0.375 V | — | — | — |
| Input Voltage Absolute-Max | — | 10 V | — | — | — |
| Input Voltage-Max | — | 10 V | — | — | — |
| Input Voltage-Min | — | 6 V | — | — | — |
| JESD-609 Code | — | e4 | — | e6 | — |
| Line Regulation-Max | — | 0.02% | — | — | — |
| Number of Functions | — | 1 | — | — | — |
| Number of Outputs | — | 1 | — | — | — |
| Operating Temperature TJ-Max | — | 125 °C | — | — | — |
| Operating Temperature TJ-Min | — | -40 °C | — | — | — |
| Output Current1-Max | — | 0.15 A | — | — | — |
| Output Voltage1-Max | — | 5.2 V | — | — | — |
| Output Voltage1-Min | — | 4.8 V | — | — | — |
| Output Voltage1-Nom | — | 5 V | — | — | — |
| Package Equivalence Code | — | TSOP5/6,.11,37 | — | — | — |
| Packing Method | — | TR, 7 INCH | TR, EMBOSSED PLASTIC, 15 INCH | TR, EMBOSSED, 15 INCH | — |
| Peak Reflow Temperature (Cel) | — | 260 | — | — | — |
| Qualification Status | — | Not Qualified | — | — | — |
| Regulator Type | — | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR | — | — | — |
| Technology | — | PMOS | — | — | — |
| Terminal Finish | — | Nickel/Palladium/Gold (Ni/Pd/Au) | — | Tin/Bismuth (Sn/Bi) | — |
| Terminal Pitch | — | 0.95 mm | — | — | — |
| Time@Peak Reflow Temperature-Max (s) | — | 30 | — | — | — |
| Voltage Tolerance-Max | — | 4% | — | — | — |
| ## TPS76350DBVR Alternates Showing results | — | Image | — | — | — |
| Reach Compliance Code | — | — | Compliant | Compliant | — |
| Capacitance | — | — | 1000 µF | 100 µF | — |
| Capacitor Type | — | — | ALUMINUM ELECTROLYTIC CAPACITOR | ALUMINUM ELECTROLYTIC CAPACITOR | — |
| Diameter | — | — | 16 mm | 6.3 mm | — |
| Dielectric Material | — | — | ALUMINUM (WET) | ALUMINUM (WET) | — |
| Height | — | — | 17 mm | 7.7 mm | — |
| Leakage Current | — | — | 0.5 mA | 0.016 mA | — |
| Mounting Feature | — | — | SURFACE MOUNT | SURFACE MOUNT | — |
| Negative Tolerance | — | — | 20% | 20% | — |
| Polarity | — | — | POLARIZED | POLARIZED | — |
| Positive Tolerance | — | — | 20% | 20% | — |
| Rated (DC) Voltage (URdc) | — | — | 50 V | 16 V | — |
| Ripple Current | — | — | 1046.5 mA | 81 mA | — |
| Size Code | — | — | 6767 | 2626 | — |
| Tan Delta | — | — | 0.12 | 0.2 | — |
| Terminal Shape | — | — | FLAT | FLAT | — |
| Reference Standard | — | — | — | AEC-Q200 | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 4 alternatives for SIHD6N80AE-GE3 — response within 24 hours.
Quick Links
Why Look for Alternatives?
Finding alternatives for SIHD6N80AE-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SIHD6N80AE-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SIHD6N80AE-GE3?
Known equivalents for SIHD6N80AE-GE3 include TPS76350DBVR, 865060663015, EEEHC1C101XP. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SIHD6N80AE-GE3?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SIHD6N80AE-GE3 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.