SI7850DP-T1-E3Alternatives & Equivalent Parts

About SI7850DP-T1-E3

SI7850DP-T1-E3 is a MOSFET (N-Channel) component manufactured by Vishay. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSI7850DP-T1-E3SourceL78M24ABDT-TRSTD20NF06LAGDR127-330-RSTD10P10F6SBR0560S1-7B82731H2701A030
ManufacturerVishaySTMicroelectronicsSTMicroelectronicsCOILTRONICSSTMicroelectronicsDiodes Inc.EPCOS
Package TypeOtherOtherOtherOtherOtherSmall Outline DiodeOther
Pin Count8332324
Temperature Range-55.0°C ~ 150.0°C——-40.0°C ~ 125.0°C~ 175.0°C-65.0°C ~ 150.0°C-40.0°C ~ 125.0°C
Price$0.5460$0.1467$0.3307$0.4920$0.2722$0.0504$1.1500
StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleNOT RECOMMENDEDACTIVEACTIVETRANSFERREDACTIVEACTIVEACTIVE
Electrical Parameters
Factory Lead Time13 Weeks12 Weeks13 Weeks—13 Weeks12 Weeks18 Weeks
YTEOL36.16——5.666
Avalanche Energy Rating (Eas)11 mJ——————
Case ConnectionDRAIN———DRAIN——
ConfigurationSINGLE WITH BUILT-IN DIODE———SINGLE WITH BUILT-IN DIODESINGLE—
DS Breakdown Voltage-Min60 V———100 V——
Drain Current-Max (ID)6.2 A———10 A——
Drain-source On Resistance-Max0.022 Ω———0.18 Ω——
FET TechnologyMETAL-OXIDE SEMICONDUCTOR———METAL-OXIDE SEMICONDUCTOR——
JESD-30 CodeR-PDSO-F8R-PSSO-G2——R-PSSO-G2R-PDSO-G2—
JESD-609 Codee3e3e3—e3e3e3
Number of Elements1———11—
Operating ModeENHANCEMENT MODE———ENHANCEMENT MODE——
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXY——PLASTIC/EPOXYPLASTIC/EPOXY—
Package ShapeRECTANGULARRECTANGULAR——RECTANGULARRECTANGULAR—
Package StyleSMALL OUTLINESMALL OUTLINE, HEAT SINK/SLUG—SMTSMALL OUTLINESMALL OUTLINEPCB Mount
Peak Reflow Temperature (Cel)260260260—260260—
Polarity/Channel TypeN-CHANNEL———P-CHANNEL——
Power Dissipation-Max (Abs)1.8 W——————
Pulsed Drain Current-Max (IDM)40 A———40 A——
Qualification StatusNot QualifiedNot Qualified———Not Qualified—
Surface MountYESYES—YESYESYESNO
Terminal FinishMatte Tin (Sn)Matte Tin (Sn)Matte Tin (Sn) - annealed—Matte Tin (Sn)MATTE TINTIN
Terminal FormFLATGULL WING——GULL WINGGULL WING—
Terminal PositionDUALSINGLE——SINGLEDUAL—
Time@Peak Reflow Temperature-Max (s)3030———30—
Transistor ApplicationSWITCHING———SWITCHING——
Transistor Element MaterialSILICON———SILICON——
Turn-off Time-Max (toff)74 ns——————
Turn-on Time-Max (ton)40 ns——————
Adjustability—FIXED—————
Dropout Voltage1-Nom—2 V—————
Input Voltage Absolute-Max—40 V—————
Input Voltage-Max—38 V—————
Input Voltage-Min—27 V—————
Line Regulation-Max—0.1%—————
Load Regulation-Max—0.48%—————
Number of Functions—1—1——2
Number of Outputs—1—————
Operating Temperature TJ-Max—125 °C—————
Operating Temperature TJ-Min—-40 °C—————
Output Current1-Max—0.5 A—————
Output Voltage1-Max—25 V—————
Output Voltage1-Min—23 V—————
Output Voltage1-Nom—24 V—————
Package Equivalence Code—SMSIP3H,.38,90TB—————
Packing Method—TR—TR, 13 Inch——Tray
Regulator Type—FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR—————
Technology—BIPOLAR—————
Terminal Pitch—2.28 mm—————
Voltage Tolerance-Max—4.17%—————
## L78M24ABDT-TR Alternates Showing results—Image—————
## STD20NF06LAG Alternates Showing results——Image————
Case/Size Code———4949———
Construction———Rectangular——Rectangular
Core Material———FERRITE——FERRITE
DC Resistance———0.06 Ω——1 Ω
Inductance-Nom (L)———33 µH——27000 µH
Inductor Application———POWER INDUCTOR——POWER INDUCTOR
Inductor Type———GENERAL PURPOSE INDUCTOR——GENERAL PURPOSE INDUCTOR
Package Height———8 mm——15.5 mm
Package Length———12.5 mm——21 mm
Package Width———12.5 mm——20 mm
Rated Current-Max———3.23 A——0.7 A
Shape/Size Description———RECTANGULAR PACKAGE——RECTANGULAR PACKAGE
Shielded———YES——NO
Terminal Placement———DUAL ENDED——RADIAL
Terminal Shape———WRAPAROUND——FLAT
Test Frequency———0.1 MHz——0.01 MHz
Tolerance———20%——50%
JEDEC-95 Code————TO-252——
Pbfree Code—————Yes—
Application—————GENERAL PURPOSE—
Diode Element Material—————SILICON—
Diode Type—————RECTIFIER DIODE—
Forward Voltage-Max (VF)—————0.44 V—
Non-rep Pk Forward Current-Max—————15 A—
Number of Phases—————1—
Output Current-Max—————0.5 A—
Rep Pk Reverse Voltage-Max—————60 V—
Lead Length——————3 mm
Special Feature——————INDUCTANCE IS MEASURED AT 0.1 mA

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

Need pricing on these alternatives?

Get one quote covering all 6 alternatives for SI7850DP-T1-E3 — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for SI7850DP-T1-E3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating SI7850DP-T1-E3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to SI7850DP-T1-E3?

Known equivalents for SI7850DP-T1-E3 include L78M24ABDT-TR, STD20NF06LAG, DR127-330-R. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of SI7850DP-T1-E3?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify SI7850DP-T1-E3 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.