SI7461DP-T1-GE3Alternatives & Equivalent Parts
About SI7461DP-T1-GE3
SI7461DP-T1-GE3 is a MOSFET (P-Channel) component manufactured by Vishay. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SI7461DP-T1-GE3Source | SIR662DP-T1-GE3 | 2SC3325 | SI3460DDV-T1-GE3 | SI7450DP-T1-E3 |
|---|---|---|---|---|---|
| Manufacturer | Vishay | Vishay | Toshiba | Vishay | Vishay |
| Package Type | Other | Other | Other | SOT23 (6-Pin) | Other |
| Pin Count | 8 | 8 | 3 | 6 | 11 |
| Temperature Range | ~ 150.0°C | ~ 150.0°C | ~ 150.0°C | -55.0°C ~ 150.0°C | ~ 150.0°C |
| Price | $1.0750 | $0.8400 | — | $0.1310 | $0.7522 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | NOT RECOMMENDED | NOT RECOMMENDED | ACTIVE | ACTIVE |
| Electrical Parameters | |||||
| YTEOL | 5 | 3 | 3 | 5 | 6 |
| Avalanche Energy Rating (Eas) | 125 mJ | 80 mJ | — | 3.2 mJ | — |
| Case Connection | DRAIN | DRAIN | — | — | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V | 60 V | — | 20 V | 200 V |
| Drain Current-Max (ID) | 8.6 A | 60 A | — | 7.9 A | 3.2 A |
| Drain-source On Resistance-Max | 0.0145 Ω | 0.0048 Ω | — | 0.028 Ω | 0.09 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — | TRENCH MOSFET | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-XDSO-C5 | R-XDSO-C5 | R-PDSO-G3 | R-PDSO-G6 | R-XDSO-C5 |
| JESD-609 Code | e3 | e3 | — | e3 | e3 |
| Number of Elements | 1 | 1 | 1 | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | — | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED | UNSPECIFIED | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | 260 | NOT SPECIFIED | 260 | 260 |
| Polarity/Channel Type | P-CHANNEL | N-CHANNEL | NPN | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 5.4 W | 104 W | 0.2 W | 2.7 W | 5.2 W |
| Pulsed Drain Current-Max (IDM) | 60 A | 100 A | — | 20 A | 40 A |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified | — | Not Qualified |
| Surface Mount | YES | YES | YES | YES | YES |
| Terminal Finish | Pure Matte Tin (Sn) - annealed | Matte Tin (Sn) | — | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal Form | C BEND | C BEND | GULL WING | GULL WING | C BEND |
| Terminal Position | DUAL | DUAL | DUAL | DUAL | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | NOT SPECIFIED | 30 | 30 |
| Transistor Element Material | SILICON | SILICON | SILICON | SILICON | SILICON |
| Factory Lead Time | — | 29 Weeks | — | 14 Weeks | 13 Weeks |
| Transistor Application | — | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Collector Current-Max (IC) | — | — | 0.5 A | — | — |
| Collector-Emitter Voltage-Max | — | — | 50 V | — | — |
| DC Current Gain-Min (hFE) | — | — | 25 | — | — |
| Power Dissipation Ambient-Max | — | — | 0.2 W | — | — |
| Transition Frequency-Nom (fT) | — | — | 300 MHz | — | — |
| VCEsat-Max | — | — | 0.25 V | — | — |
| Pbfree Code | — | — | — | Yes | — |
| Feedback Cap-Max (Crss) | — | — | — | 41 pF | — |
| JEDEC-95 Code | — | — | — | MO-193AA | — |
| Reference Standard | — | — | — | IEC-61249-2-21 | — |
| Turn-off Time-Max (toff) | — | — | — | 48 ns | — |
| Turn-on Time-Max (ton) | — | — | — | 32 ns | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 4 alternatives for SI7461DP-T1-GE3 — response within 24 hours.
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Why Look for Alternatives?
Finding alternatives for SI7461DP-T1-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SI7461DP-T1-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SI7461DP-T1-GE3?
Known equivalents for SI7461DP-T1-GE3 include SIR662DP-T1-GE3, 2SC3325, SI3460DDV-T1-GE3. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SI7461DP-T1-GE3?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SI7461DP-T1-GE3 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.