SI4812BDY-T1-GE3 Vishay Undefined or Miscellaneous (Other) In Stock
Vishay SI4812BDY-T1-GE3 is a single N-channel MOSFET with built-in diode, 30 V breakdown voltage, 7.3 A drain current, and ultra-low 16 mΩ Rds(on) in a compact SOIC-8 package. From $0.80, in stock, worldwide shipping.
- Manufacturer
- Vishay
- Package
- Other
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- SI4812BDY-T1-GE3 Datasheet PDF
- Category
- Undefined or Miscellaneous
- Price
- From $0.4864(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low 16 mΩ drain-source on-resistance (Rds(on)) at 4.5 V gate drive reduces conduction losses in battery management and load-switch applications
- 30 V breakdown voltage with 7.3 A continuous drain current and 1.25 mJ avalanche energy rating for robust protection in automotive and portable power designs
- Built-in body diode and SOIC-8 package (MS-012AA) enable synchronous rectification in buck/boost converters without external diode components
Applications
SI4812BDY-T1-GE3 is used as a synchronous rectifier, load switch, or battery protection MOSFET in portable electronics, Li-ion battery packs, and DC/DC converters where low Rds(on) of 16 mΩ and 30 V blocking capability are required. Its SOIC-8 package and built-in body diode make it suitable for space-constrained power management modules in smartphones, wearables, and IoT devices.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 1.25mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 7.3A |
| Drain-source On Resistance-Max | 0.016Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 50A |
| Qualification Status | Not Qualified |
| Reference Standard | IEC-61249-2-21 |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 45ns |
| Turn-on Time-Max (ton) | 45ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the Rds(on) and drain current rating of SI4812BDY-T1-GE3?
SI4812BDY-T1-GE3 has a maximum Rds(on) of 16 mΩ at a gate voltage of 4.5 V and supports a maximum drain current of 7.3 A, making it highly efficient as a load switch or synchronous rectifier in 30 V battery management circuits.
How does the built-in diode in SI4812BDY-T1-GE3 benefit synchronous rectifier designs?
The built-in body diode in SI4812BDY-T1-GE3 provides a freewheeling path during dead-time intervals in synchronous buck converters, eliminating the need for an external Schottky diode and reducing BOM cost while maintaining efficiency at switching frequencies up to several MHz with a 30 V blocking rating.
Is SI4812BDY-T1-GE3 suitable for Li-ion battery protection applications?
Yes, SI4812BDY-T1-GE3 is well-suited for Li-ion battery protection circuits, where its 30 V breakdown voltage exceeds the 4.2 V per-cell maximum by a large safety margin, its 7.3 A rating handles typical charge/discharge currents, and the 16 mΩ Rds(on) keeps conduction losses below 1 W at 8 A.
What is the avalanche energy rating of SI4812BDY-T1-GE3 and why does it matter in power designs?
SI4812BDY-T1-GE3 is rated for 1.25 mJ avalanche energy (Eas), which defines the device's ability to absorb unclamped inductive switching energy without breakdown. This protects the MOSFET during gate drive glitches or load step transients in motor drive and power converter designs operating from a 12 V to 24 V bus.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2160 | $1.22 |
| 83+ | $0.6080 | $50.46 |
| 330+ | $0.4864 | $160.51 |
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