SI4812BDY-T1-GE3 Vishay Undefined or Miscellaneous (Other) In Stock

Name: SI4812BDY-T1-GE3
Brand: Vishay
SKU: SI4812BDY-T1-GE3
Availability: InStock

Vishay SI4812BDY-T1-GE3 is a single N-channel MOSFET with built-in diode, 30 V breakdown voltage, 7.3 A drain current, and ultra-low 16 mΩ Rds(on) in a compact SOIC-8 package. From $0.80, in stock, worldwide shipping.

OBSOLETEUndefined or MiscellaneousVerified Jun 2026

Package / Visual Reference

SI4812BDY-T1-GE3Other

Quick Facts

Manufacturer: Vishay
Package: Other
Pin Count: 8
Lifecycle: OBSOLETE
Datasheet: SI4812BDY-T1-GE3 Datasheet PDF
Category: Undefined or Miscellaneous
Price: From $0.4864(MOQ 1)
Temp Range: -55.0°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of SI4812BDY-T1-GE3?

Ultra-low 16 mΩ drain-source on-resistance (Rds(on)) at 4.5 V gate drive reduces conduction losses in battery management and load-switch applications
30 V breakdown voltage with 7.3 A continuous drain current and 1.25 mJ avalanche energy rating for robust protection in automotive and portable power designs
Built-in body diode and SOIC-8 package (MS-012AA) enable synchronous rectification in buck/boost converters without external diode components

What is SI4812BDY-T1-GE3 used for?

SI4812BDY-T1-GE3 is used as a synchronous rectifier, load switch, or battery protection MOSFET in portable electronics, Li-ion battery packs, and DC/DC converters where low Rds(on) of 16 mΩ and 30 V blocking capability are required. Its SOIC-8 package and built-in body diode make it suitable for space-constrained power management modules in smartphones, wearables, and IoT devices.

What are the specifications of SI4812BDY-T1-GE3?

YTEOL	0
Avalanche Energy Rating (Eas)	1.25mJ
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30V
Drain Current-Max (ID)	7.3A
Drain-source On Resistance-Max	0.016Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MS-012AA
JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	50A
Qualification Status	Not Qualified
Reference Standard	IEC-61249-2-21
Surface Mount	YES
Terminal Finish	MATTE TIN
Terminal Form	GULL WING
Terminal Position	DUAL
Transistor Element Material	SILICON
Turn-off Time-Max (toff)	45ns
Turn-on Time-Max (ton)	45ns
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
Moisture Sensitivity Level	MSL 1
ECCN	EAR99

Where can I find the SI4812BDY-T1-GE3 datasheet?

SI4812BDY-T1-GE3 Datasheet Download

Official datasheet from Vishay

What are equivalent replacements for SI4812BDY-T1-GE3?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the Rds(on) and drain current rating of SI4812BDY-T1-GE3?

SI4812BDY-T1-GE3 has a maximum Rds(on) of 16 mΩ at a gate voltage of 4.5 V and supports a maximum drain current of 7.3 A, making it highly efficient as a load switch or synchronous rectifier in 30 V battery management circuits.

How does the built-in diode in SI4812BDY-T1-GE3 benefit synchronous rectifier designs?

The built-in body diode in SI4812BDY-T1-GE3 provides a freewheeling path during dead-time intervals in synchronous buck converters, eliminating the need for an external Schottky diode and reducing BOM cost while maintaining efficiency at switching frequencies up to several MHz with a 30 V blocking rating.

Is SI4812BDY-T1-GE3 suitable for Li-ion battery protection applications?

Yes, SI4812BDY-T1-GE3 is well-suited for Li-ion battery protection circuits, where its 30 V breakdown voltage exceeds the 4.2 V per-cell maximum by a large safety margin, its 7.3 A rating handles typical charge/discharge currents, and the 16 mΩ Rds(on) keeps conduction losses below 1 W at 8 A.

What is the avalanche energy rating of SI4812BDY-T1-GE3 and why does it matter in power designs?

SI4812BDY-T1-GE3 is rated for 1.25 mJ avalanche energy (Eas), which defines the device's ability to absorb unclamped inductive switching energy without breakdown. This protects the MOSFET during gate drive glitches or load step transients in motor drive and power converter designs operating from a 12 V to 24 V bus.

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From $0.4864

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Qty.	Unit Price	Ext. Price
1+	$1.2160	$1.22
83+	$0.6080	$50.46
330+	$0.4864	$160.51

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Unit price: $1.2160 · Total: $1.22

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Lead Time3-7 business days

MOQFrom 1 piece

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OriginChina (Authorized)

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