SI3127DV-T1-GE3Alternatives & Equivalent Parts
About SI3127DV-T1-GE3
SI3127DV-T1-GE3 is a MOSFET (P-Channel) component manufactured by Vishay. It comes in a SOT23 (6-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SI3127DV-T1-GE3Source | DDTD113ZC-7-F | ICM-20789 | CL10B103KB8NNNC |
|---|---|---|---|---|
| Manufacturer | Vishay | Diodes Inc. | TDK | Samsung Electro-Mechanics |
| Package Type | SOT23 (6-Pin) | SOT23 (3-Pin) | Other | Capacitor Chip Non-polarised |
| Pin Count | 6 | 3 | 24 | 2 |
| Temperature Range | — | ~ 150.0°C | -40.0°C ~ 85.0°C | -55.0°C ~ 125.0°C |
| Price | $0.1880 | $0.0302 | $5.4900 | $0.0018 |
| Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | OBSOLETE | ACTIVE |
| Electrical Parameters | ||||
| YTEOL | 7 | 7 | 0 | 7 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN RESISTOR | — | — |
| DS Breakdown Voltage-Min | 60 V | — | — | — |
| Drain Current-Max (ID) | 5.1 A | — | — | — |
| Drain-source On Resistance-Max | 0.089 Ω | — | — | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — |
| JEDEC-95 Code | MO-193AA | — | — | — |
| JESD-30 Code | R-PDSO-G6 | R-PDSO-G3 | S-XBGA-B24 | — |
| JESD-609 Code | e3 | e3 | — | e3 |
| Number of Elements | 1 | 1 | — | — |
| Operating Mode | ENHANCEMENT MODE | — | — | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED | — |
| Package Shape | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR PACKAGE |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | GRID ARRAY, LOW PROFILE, FINE PITCH | SMT |
| Peak Reflow Temperature (Cel) | 260 | 260 | — | — |
| Polarity/Channel Type | P-CHANNEL | NPN | — | — |
| Surface Mount | YES | YES | YES | YES |
| Terminal Finish | Matte Tin (Sn) | MATTE TIN | — | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal Form | GULL WING | GULL WING | BUTT | — |
| Terminal Position | DUAL | DUAL | BOTTOM | — |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | — | — |
| Transistor Application | SWITCHING | — | — | — |
| Transistor Element Material | SILICON | SILICON | — | — |
| Pbfree Code | — | Yes | — | Yes |
| Reach Compliance Code | — | Compliant | — | Compliant |
| Factory Lead Time | — | 12 Weeks | — | 20 Weeks |
| Additional Feature | — | BUILT IN BIAS RESISTOR RATIO IS 10 | — | — |
| Collector Current-Max (IC) | — | 0.5 A | — | — |
| Collector-Emitter Voltage-Max | — | 50 V | — | — |
| DC Current Gain-Min (hFE) | — | 56 | — | — |
| Power Dissipation-Max (Abs) | — | 0.2 W | — | — |
| Qualification Status | — | Not Qualified | — | — |
| Transition Frequency-Nom (fT) | — | 200 MHz | — | — |
| Analog IC - Other Type | — | — | ANALOG CIRCUIT | — |
| Number of Functions | — | — | 1 | — |
| Supply Voltage-Max (Vsup) | — | — | 3.45 V | — |
| Supply Voltage-Min (Vsup) | — | — | 1.71 V | — |
| Supply Voltage-Nom (Vsup) | — | — | 1.8 V | — |
| Technology | — | — | CMOS | — |
| Temperature Grade | — | — | INDUSTRIAL | — |
| Terminal Pitch | — | — | 0.5 mm | — |
| Capacitance | — | — | — | 0.01 µF |
| Capacitor Type | — | — | — | CERAMIC CAPACITOR |
| Dielectric Material | — | — | — | CERAMIC |
| Height | — | — | — | 0.8 mm |
| Mounting Feature | — | — | — | SURFACE MOUNT |
| Multilayer | — | — | — | Yes |
| Negative Tolerance | — | — | — | 10% |
| Packing Method | — | — | — | TR, CARDBOARD PAPER, 7 INCH |
| Positive Tolerance | — | — | — | 10% |
| Rated (DC) Voltage (URdc) | — | — | — | 50 V |
| Size Code | — | — | — | 0603 |
| Temperature Characteristics Code | — | — | — | X7R |
| Temperature Coefficient | — | — | — | 15% ppm/°C |
| Terminal Shape | — | — | — | WRAPAROUND |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 3 alternatives for SI3127DV-T1-GE3 — response within 24 hours.
Quick Links
Why Look for Alternatives?
Finding alternatives for SI3127DV-T1-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SI3127DV-T1-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SI3127DV-T1-GE3?
Known equivalents for SI3127DV-T1-GE3 include DDTD113ZC-7-F, ICM-20789, CL10B103KB8NNNC. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SI3127DV-T1-GE3?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SI3127DV-T1-GE3 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.