SI2365EDS-T1-GE3Alternatives & Equivalent Parts
About SI2365EDS-T1-GE3
SI2365EDS-T1-GE3 is a MOSFET (P-Channel) component manufactured by Vishay. It comes in a SOT23 (3-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SI2365EDS-T1-GE3Source | ERJP14F6801U | 0ZCF0050FF2C | SDR2207-100ML | SI7129DN-T1-GE3 |
|---|---|---|---|---|---|
| Manufacturer | Vishay | Panasonic | Stewart Connector | Bourns | Vishay |
| Package Type | SOT23 (3-Pin) | Other | Fuses Chip | Other | Other |
| Pin Count | 3 | 2 | 2 | 2 | 8 |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 155.0°C | -40.0°C ~ 85.0°C | -40.0°C ~ 125.0°C | ~ 150.0°C |
| Price | $0.0734 | $0.0532 | $0.1168 | $0.5252 | $0.1778 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||
| Pbfree Code | Yes | Yes | — | Yes | — |
| Factory Lead Time | 14 Weeks | 22 Weeks | 15 Weeks | 14 Weeks | 15 Weeks |
| YTEOL | 7 | 12 | 8.25 | 6.6 | 5.4 |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | — | — | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 V | — | — | — | 30 V |
| Drain Current-Max (ID) | 5.9 A | — | — | — | 35 A |
| Drain-source On Resistance-Max | 0.041 Ω | — | — | — | 0.0114 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-236AB | — | — | — | — |
| JESD-30 Code | R-PDSO-G3 | — | — | — | S-XDSO-C5 |
| JESD-609 Code | e3 | e3 | e3 | e3 | e3 |
| Number of Elements | 1 | — | — | — | 1 |
| Operating Mode | ENHANCEMENT MODE | — | — | — | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | — | — | — | UNSPECIFIED |
| Package Shape | RECTANGULAR | RECTANGULAR PACKAGE | RECTANGULAR PACKAGE | — | SQUARE |
| Package Style | SMALL OUTLINE | SMT | SMT | SMT | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | — | — | — | 260 |
| Polarity/Channel Type | P-CHANNEL | — | — | — | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.7 W | — | — | — | 52.1 W |
| Surface Mount | YES | YES | YES | YES | YES |
| Terminal Finish | Matte Tin (Sn) | Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) | TIN | Matte Tin (Sn) |
| Terminal Form | GULL WING | — | — | — | C BEND |
| Terminal Position | DUAL | — | — | — | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | — | — | — | 40 |
| Transistor Application | SWITCHING | — | — | — | SWITCHING |
| Transistor Element Material | SILICON | — | — | — | SILICON |
| Reach Compliance Code | — | Compliant | Compliant | — | — |
| Construction | — | Rectangular | — | Rectangular | — |
| Mounting Feature | — | SURFACE MOUNT | SURFACE MOUNT | — | — |
| Package Height | — | 0.6 mm | 1.15 mm | 7 mm | — |
| Package Length | — | 3.2 mm | 7.98 mm | 22 mm | — |
| Package Width | — | 2.5 mm | 5.44 mm | 15 mm | — |
| Packing Method | — | TR, EMBOSSED, 7 INCH | TR, 7 INCH | TR, EMBOSSED, 13 INCH | — |
| Rated Power Dissipation (P) | — | 0.5 W | — | — | — |
| Rated Temperature | — | 70 °C | — | — | — |
| Reference Standard | — | AEC-Q200, IEC60115-8 | AEC-Q200; CUL; TUV; UL | — | — |
| Resistance | — | 6800 Ω | 0.3 Ω | — | — |
| Resistor Type | — | FIXED RESISTOR | PTC RESETTABLE FUSE | — | — |
| Size Code | — | 1210 | — | — | — |
| Technology | — | METAL GLAZE/THICK FILM | — | — | — |
| Temperature Coefficient | — | 100 ppm/°C | — | — | — |
| Terminal Shape | — | WRAPAROUND | WRAPAROUND | WRAPAROUND | — |
| Tolerance | — | 1% | — | 20% | — |
| Working Voltage | — | 200 V | 60 V | — | — |
| Additional Feature | — | — | RMIN AT 23 DEG CEL | — | — |
| Terminal Placement | — | — | DUAL ENDED | DUAL ENDED | — |
| Thermistor Application | — | — | TEMPERATURE SENSING | — | — |
| Case/Size Code | — | — | — | 8759 | — |
| Core Material | — | — | — | FERRITE | — |
| DC Resistance | — | — | — | 0.0172 Ω | — |
| Inductance-Nom (L) | — | — | — | 10 µH | — |
| Inductor Application | — | — | — | POWER INDUCTOR | — |
| Inductor Type | — | — | — | GENERAL PURPOSE INDUCTOR | — |
| Number of Functions | — | — | — | 1 | — |
| Rated Current-Max | — | — | — | 6.5 A | — |
| Self Resonance Frequency | — | — | — | 20 MHz | — |
| Shape/Size Description | — | — | — | RECTANGULAR PACKAGE | — |
| Shielded | — | — | — | NO | — |
| Test Frequency | — | — | — | 0.1 MHz | — |
| Avalanche Energy Rating (Eas) | — | — | — | — | 31.25 mJ |
| Case Connection | — | — | — | — | DRAIN |
| Pulsed Drain Current-Max (IDM) | — | — | — | — | 60 A |
| Qualification Status | — | — | — | — | Not Qualified |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 4 alternatives for SI2365EDS-T1-GE3 — response within 24 hours.
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Why Look for Alternatives?
Finding alternatives for SI2365EDS-T1-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SI2365EDS-T1-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SI2365EDS-T1-GE3?
Known equivalents for SI2365EDS-T1-GE3 include ERJP14F6801U, 0ZCF0050FF2C, SDR2207-100ML. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SI2365EDS-T1-GE3?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SI2365EDS-T1-GE3 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.