SI2343CDS-T1-GE3Alternatives & Equivalent Parts

About SI2343CDS-T1-GE3

SI2343CDS-T1-GE3 is a MOSFET (P-Channel) component manufactured by Vishay. It comes in a SOT23 (3-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSI2343CDS-T1-GE3SourceDMP2035U-7TLV341IDBVR24LC64T-I/MCAD8556ARZAT24C16C-STUM-T
ManufacturerVishayDiodes Inc.Texas InstrumentsMicrochipAnalog DevicesMicrochip
Package TypeSOT23 (3-Pin)OtherSOT23 (6-Pin)Small Outline No-leadSmall Outline PackagesSOT23 (5-Pin)
Pin Count336885
Temperature Range-55.0°C ~ 150.0°C-55.0°C ~ 150.0°C-40.0°C ~ 125.0°C-40.0°C ~ 85.0°C-40.0°C ~ 140.0°C-40.0°C ~ 85.0°C
Price$0.1137$0.0612$0.5280$0.5000$4.8200$0.3150
StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleNOT RECOMMENDEDACTIVEACTIVEACTIVEACTIVEACTIVE
Electrical Parameters
Pbfree CodeYesYesYesYesNoYes
Factory Lead Time12 Weeks12 Weeks23 Weeks7 Weeks
YTEOL351581014
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V20 V
Drain Current-Max (ID)5.9 A4.9 A
Drain-source On Resistance-Max0.045 Ω0.045 Ω
FET TechnologyTRENCH MOSFETMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)93 pF145 pF
JEDEC-95 CodeTO-236
JESD-30 CodeR-PDSO-G3R-PDSO-G3R-PDSO-G6R-PDSO-N8R-PDSO-G8R-PDSO-G5
JESD-609 Codee3e3e4e3e3e3
Number of Elements11
Operating ModeENHANCEMENT MODEENHANCEMENT MODESYNCHRONOUSSYNCHRONOUS
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package StyleSMALL OUTLINESMALL OUTLINESMALL OUTLINE, LOW PROFILE, SHRINK PITCHSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILESMALL OUTLINESMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel)260260260260260260
Polarity/Channel TypeP-CHANNELP-CHANNEL
Power Dissipation-Max (Abs)2.5 W1.2 W
Pulsed Drain Current-Max (IDM)25 A24 A
Reference StandardIEC-61249-2-21MIL-STD-202
Surface MountYESYESYESYESYESYES
Terminal FinishMatte Tin (Sn)MATTE TINNickel/Palladium/Gold (Ni/Pd/Au)Matte Tin (Sn)Matte Tin (Sn)Matte Tin (Sn)
Terminal FormGULL WINGGULL WINGGULL WINGNO LEADGULL WINGGULL WING
Terminal PositionDUALDUALDUALDUALDUALDUAL
Time@Peak Reflow Temperature-Max (s)30303040
Transistor ApplicationSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICON
Turn-off Time-Max (toff)40 ns
Turn-on Time-Max (ton)83 ns
Qualification StatusNot QualifiedNot QualifiedNot QualifiedNot Qualified
Amplifier TypeOPERATIONAL AMPLIFIER
ArchitectureVOLTAGE-FEEDBACK
Average Bias Current-Max (IIB)0.003 µA
Bias Current-Max (IIB) @25C0.0002 µA
Common-mode Reject Ratio-Min50 dB
Common-mode Reject Ratio-Nom90 dB
Frequency CompensationYES
Input Offset Voltage-Max4000 µV
Low-BiasYES
Low-OffsetNO
MicropowerYES
Number of Functions1111
Package Equivalence CodeTSOP6,.11,37SOLCC8,.12,20SOP8,.25TSOP5/6,.11,37
Packing MethodTR
PowerNO
Programmable PowerNO
Slew Rate-Nom0.9 V/us
SubcategoryOperational Amplifier
Supply Current-Max0.2 mA0.003 mA0.003 mA
Supply Voltage Limit-Max5.5 V
Supply Voltage-Nom (Vsup)1.8 V4.5 V3 V
TechnologyCMOSCMOSCMOS
Temperature GradeAUTOMOTIVEINDUSTRIALAUTOMOTIVEINDUSTRIAL
Terminal Pitch0.95 mm0.5 mm1.27 mm0.95 mm
Unity Gain BW-Nom2200
Voltage Gain-Min562.34
WidebandNO
## TLV341IDBVR Alternates Showing resultsImage
Manufacturer Package CodeDFN-8R-8TSOT-5
Clock Frequency-Max (fCLK)0.4 MHz1 MHz
Data Retention Time-Min200100
Endurance1000000 Write/Erase Cycles1000000 Write/Erase Cycles
I2C Control Byte1010DDDR1010DDDR
Memory Density65536 bit16384 bit
Memory IC TypeEEPROMEEPROM
Memory Width88
Number of Ports11
Number of Words8192 words2048 words
Number of Words Code80002000
Organization8KX82KX8
Output CharacteristicsOPEN-DRAINOPEN-DRAIN
Parallel/SerialSERIALSERIAL
Programming Voltage4.5 V3 V
Serial Bus TypeI2CI2C
Standby Current-Max0.000001 A0.000006 A
Supply Voltage-Max (Vsup)5.5 V5.5 V5.5 V
Supply Voltage-Min (Vsup)2.5 V2.7 V2.5 V
Write Cycle Time-Max (tWC)5 ms5 ms
Write ProtectionHARDWAREHARDWARE
Analog IC - Other TypeANALOG CIRCUIT
Supply Current-Max (Isup)2.8 mA
## AD8556ARZ Alternates Showing resultsImage
Date Of Intro2016-12-07
Additional FeatureALSO OPERATES AT 0.4MHZ AT 1.7-5.5 SUPPLY VOLTAGE
Screening LevelTS 16949

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 5 alternatives for SI2343CDS-T1-GE3 — response within 24 hours.

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Why Look for Alternatives?

Finding alternatives for SI2343CDS-T1-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating SI2343CDS-T1-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to SI2343CDS-T1-GE3?

Known equivalents for SI2343CDS-T1-GE3 include DMP2035U-7, TLV341IDBVR, 24LC64T-I/MC. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of SI2343CDS-T1-GE3?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify SI2343CDS-T1-GE3 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.