SI2333CDS-T1-E3 Vishay Integrated Circuit (SOT23 (3-Pin)) In Stock
Vishay SI2333CDS-T1-E3 is a P-channel MOSFET in a SOT-23 3-pin package with 12 V drain-source breakdown voltage, 7.1 A maximum drain current, and 35 mΩ on-resistance. Its integrated built-in diode and compact footprint suit load switching in portable and space-constrained designs. Available in stock worldwide with competitive pricing.
- Manufacturer
- Vishay
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- SI2333CDS-T1-E3 Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $0.3000(MOQ 25)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SI2333CDS-T1-E3?
- 7.1 A maximum drain current with 35 mΩ on-resistance enables efficient load switching in compact portable devices
- 12 V drain-source breakdown rating covers single-cell Li-ion and USB power management applications
- SOT-23 3-pin package with integrated built-in diode reduces external component count in P-channel switch circuits
What is SI2333CDS-T1-E3 used for?
The SI2333CDS-T1-E3 is suited for load switching, reverse-polarity protection, and power multiplexing in portable consumer electronics, wearable devices, and battery-powered IoT nodes operating from single-cell Li-ion or USB 5 V rails. Its 35 mΩ on-resistance and 7.1 A drain current capacity minimize conduction losses in high-current load paths within compact SOT-23 PCB layouts. Engineers also use it in battery charger circuits and power management modules where a P-channel FET with a built-in body diode simplifies the switch topology.
What are the specifications of SI2333CDS-T1-E3?
| Factory Lead Time | 15Weeks |
| YTEOL | 5 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 12V |
| Drain Current-Max (ID) | 7.1A |
| Drain-source On Resistance-Max | 0.035Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 260pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2.5W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 90ns |
| Turn-on Time-Max (ton) | 80ns |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the SI2333CDS-T1-E3 datasheet?
SI2333CDS-T1-E3 Datasheet DownloadOfficial datasheet from Vishay
What are equivalent replacements for SI2333CDS-T1-E3?
Compatible alternatives and drop-in replacements for SI2333CDS-T1-E3:
suggested
suggested
suggested
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Frequently Asked Questions
What on-resistance and current rating does the SI2333CDS-T1-E3 offer for load switching?
The SI2333CDS-T1-E3 features a maximum drain-source on-resistance of 35 mΩ and a maximum drain current of 7.1 A. At 35 mΩ, conduction losses in a 5 A load path are only 0.875 W, making this P-channel MOSFET efficient for battery-powered load switches in portable electronics and IoT devices.
Is the SI2333CDS-T1-E3 suitable for single-cell Li-ion or USB power management circuits?
Yes, the SI2333CDS-T1-E3 is well matched to single-cell Li-ion battery packs (typically 2.7 V to 4.2 V) and USB 5 V power paths, well within its 12 V drain-source breakdown rating. Its low 35 mΩ on-resistance and 7.1 A current capability handle the switching demands of charger input selectors and load disconnect circuits in compact portable devices.
What advantage does the built-in diode in SI2333CDS-T1-E3 provide in switch circuit designs?
The SI2333CDS-T1-E3 integrates a built-in body diode across its drain and source terminals, which provides an inherent reverse-current path during switching transitions. This eliminates the need for an external protection diode in P-channel load switch designs, reducing the component count and saving board area in 3-pin SOT-23 circuit layouts.
How compact is the SI2333CDS-T1-E3, and in which space-constrained designs does it fit best?
The SI2333CDS-T1-E3 uses a SOT-23 3-pin package (TO-236AB), one of the smallest standard MOSFET footprints available, with a typical body size of approximately 3 mm x 1.75 mm. This makes it an ideal P-channel switch for wearable electronics, wireless earbuds, miniature IoT sensor nodes, and any portable design where PCB area below 10 mm² per FET is required.
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Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 25+ | $0.7280 | $18.20 |
| 50+ | $0.6040 | $30.20 |
| 100+ | $0.4780 | $47.80 |
| 250+ | $0.4620 | $115.50 |
| 500+ | $0.3268 | $163.40 |
| 670+ | $0.3000 | $201.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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