SI2333CDS-T1-E3 Vishay Integrated Circuit (SOT23 (3-Pin)) In Stock

Vishay SI2333CDS-T1-E3 is a P-channel MOSFET in a SOT-23 3-pin package with 12 V drain-source breakdown voltage, 7.1 A maximum drain current, and 35 mΩ on-resistance. Its integrated built-in diode and compact footprint suit load switching in portable and space-constrained designs. Available in stock worldwide with competitive pricing.

ACTIVEIntegrated CircuitVerified Jun 2026
Package / Visual Reference
SI2333CDS-T1-E3SOT23 (3-Pin)
Quick Facts
Manufacturer
Vishay
Package
SOT23 (3-Pin)
Pin Count
3
Lifecycle
ACTIVE
Category
Integrated Circuit
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 7.1 A maximum drain current with 35 mΩ on-resistance enables efficient load switching in compact portable devices
  • 12 V drain-source breakdown rating covers single-cell Li-ion and USB power management applications
  • SOT-23 3-pin package with integrated built-in diode reduces external component count in P-channel switch circuits

Applications

The SI2333CDS-T1-E3 is suited for load switching, reverse-polarity protection, and power multiplexing in portable consumer electronics, wearable devices, and battery-powered IoT nodes operating from single-cell Li-ion or USB 5 V rails. Its 35 mΩ on-resistance and 7.1 A drain current capacity minimize conduction losses in high-current load paths within compact SOT-23 PCB layouts. Engineers also use it in battery charger circuits and power management modules where a P-channel FET with a built-in body diode simplifies the switch topology.

Specifications

Factory Lead Time15Weeks
YTEOL5
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min12V
Drain Current-Max (ID)7.1A
Drain-source On Resistance-Max0.035Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)260pF
JEDEC-95 CodeTO-236AB
JESD-30 CodeR-PDSO-G3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeP-CHANNEL
Power Dissipation-Max (Abs)2.5W
Pulsed Drain Current-Max (IDM)20A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMatte Tin (Sn)
Terminal FormGULL WING
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)90ns
Turn-on Time-Max (ton)80ns
PackageSOT23 (3-Pin)

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99

Datasheet

SI2333CDS-T1-E3 Datasheet Download

Official datasheet from Vishay

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for SI2333CDS-T1-E3:

Frequently Asked Questions

What on-resistance and current rating does the SI2333CDS-T1-E3 offer for load switching?

The SI2333CDS-T1-E3 features a maximum drain-source on-resistance of 35 mΩ and a maximum drain current of 7.1 A. At 35 mΩ, conduction losses in a 5 A load path are only 0.875 W, making this P-channel MOSFET efficient for battery-powered load switches in portable electronics and IoT devices.

Is the SI2333CDS-T1-E3 suitable for single-cell Li-ion or USB power management circuits?

Yes, the SI2333CDS-T1-E3 is well matched to single-cell Li-ion battery packs (typically 2.7 V to 4.2 V) and USB 5 V power paths, well within its 12 V drain-source breakdown rating. Its low 35 mΩ on-resistance and 7.1 A current capability handle the switching demands of charger input selectors and load disconnect circuits in compact portable devices.

What advantage does the built-in diode in SI2333CDS-T1-E3 provide in switch circuit designs?

The SI2333CDS-T1-E3 integrates a built-in body diode across its drain and source terminals, which provides an inherent reverse-current path during switching transitions. This eliminates the need for an external protection diode in P-channel load switch designs, reducing the component count and saving board area in 3-pin SOT-23 circuit layouts.

How compact is the SI2333CDS-T1-E3, and in which space-constrained designs does it fit best?

The SI2333CDS-T1-E3 uses a SOT-23 3-pin package (TO-236AB), one of the smallest standard MOSFET footprints available, with a typical body size of approximately 3 mm x 1.75 mm. This makes it an ideal P-channel switch for wearable electronics, wireless earbuds, miniature IoT sensor nodes, and any portable design where PCB area below 10 mm² per FET is required.

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About Vishay

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AvailabilityIn Stock
Reference Price (USD)
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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

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Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy