SI2329DS-T1-GE3Alternatives & Equivalent Parts
About SI2329DS-T1-GE3
SI2329DS-T1-GE3 is a MOSFET (P-Channel) component manufactured by Vishay. It comes in a SOT23 (3-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SI2329DS-T1-GE3Source | SM05T1G | TG110-AEX50N5LF | MCR18EZPF2201 |
|---|---|---|---|---|
| Manufacturer | Vishay | ON Semiconductor | Halo Electronics | ROHM Semiconductor |
| Package Type | SOT23 (3-Pin) | SOT23 (3-Pin) | Small Outline Packages | Resistor Chip |
| Pin Count | 3 | 3 | 16 | 2 |
| Temperature Range | ~ 150.0°C | -55.0°C ~ 150.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 155.0°C |
| Price | $0.1490 | $0.0187 | $1.8080 | $0.0064 |
| Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | ||||
| YTEOL | 7.07 | 6.46 | 7.29 | 9 |
| Configuration | SINGLE WITH BUILT-IN DIODE | COMMON ANODE, 2 ELEMENTS, 2 CHANNEL | — | — |
| DS Breakdown Voltage-Min | 8 V | — | — | — |
| Drain Current-Max (ID) | 6 A | — | — | — |
| Drain-source On Resistance-Max | 0.03 Ω | — | — | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | — | — |
| JEDEC-95 Code | TO-236AB | TO-236AB | — | — |
| JESD-30 Code | R-PDSO-G3 | R-PDSO-G3 | — | — |
| JESD-609 Code | e3 | e3 | — | — |
| Number of Elements | 1 | 2 | — | — |
| Operating Mode | ENHANCEMENT MODE | — | — | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | — | — |
| Package Shape | RECTANGULAR | RECTANGULAR | — | — |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | — | SMT |
| Peak Reflow Temperature (Cel) | 260 | 260 | — | — |
| Polarity/Channel Type | P-CHANNEL | — | — | — |
| Power Dissipation-Max (Abs) | 2.5 W | — | — | — |
| Qualification Status | Not Qualified | Not Qualified | — | — |
| Surface Mount | YES | YES | YES | YES |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) - annealed | — | Tin (Sn) - with Nickel (Ni) barrier |
| Terminal Form | GULL WING | GULL WING | — | — |
| Terminal Position | DUAL | DUAL | — | — |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | — | — |
| Transistor Application | SWITCHING | — | — | — |
| Transistor Element Material | SILICON | — | — | — |
| Pbfree Code | — | Yes | — | Yes |
| Manufacturer Package Code | — | 318 | — | — |
| Breakdown Voltage-Max | — | 7.3 V | — | — |
| Breakdown Voltage-Min | — | 6.2 V | — | — |
| Breakdown Voltage-Nom | — | 6.7 V | — | — |
| Clamping Voltage-Max | — | 9.8 V | — | — |
| Diode Element Material | — | SILICON | — | — |
| Diode Type | — | TRANS VOLTAGE SUPPRESSOR DIODE | — | — |
| Non-rep Peak Rev Power Dis-Max | — | 300 W | — | — |
| Polarity | — | UNIDIRECTIONAL | — | — |
| Power Dissipation-Max | — | 0.225 W | — | — |
| Reference Standard | — | IEC-61000-4-2, 4-4, 4-5 | — | — |
| Rep Pk Reverse Voltage-Max | — | 5 V | — | — |
| Reverse Current-Max | — | 10 µA | — | — |
| Reverse Test Voltage | — | 5 V | — | — |
| Technology | — | AVALANCHE | — | METAL GLAZE/THICK FILM |
| Factory Lead Time | — | — | 14 Weeks | — |
| Additional Feature | — | — | HEIGHT DIMENSION INCLUDES TERMINALS | — |
| Application | — | — | 10/100 BASE-TX; ETHERNET | — |
| Approvals | — | — | AEC-Q200; UL | — |
| Height | — | — | 6.35 mm | — |
| Isolation Voltage | — | — | 1500 V | — |
| Mounting Feature | — | — | SURFACE MOUNT | SURFACE MOUNT |
| Number of Functions | — | — | 1 | — |
| Primary Inductance | — | — | 350 µH | — |
| Transformer Type | — | — | DATACOM TRANSFORMER | — |
| Reach Compliance Code | — | — | — | Compliant |
| Construction | — | — | — | Rectangular |
| Package Height | — | — | — | 0.55 mm |
| Package Length | — | — | — | 3.2 mm |
| Package Width | — | — | — | 1.6 mm |
| Packing Method | — | — | — | TR, Paper, 7 Inch |
| Rated Power Dissipation (P) | — | — | — | 0.25 W |
| Rated Temperature | — | — | — | 70 °C |
| Resistance | — | — | — | 2200 Ω |
| Resistor Type | — | — | — | FIXED RESISTOR |
| Size Code | — | — | — | 1206 |
| Terminal Shape | — | — | — | WRAPAROUND |
| Tolerance | — | — | — | 1% |
| Working Voltage | — | — | — | 200 V |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 3 alternatives for SI2329DS-T1-GE3 — response within 24 hours.
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Why Look for Alternatives?
Finding alternatives for SI2329DS-T1-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SI2329DS-T1-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SI2329DS-T1-GE3?
Known equivalents for SI2329DS-T1-GE3 include SM05T1G, TG110-AEX50N5LF, MCR18EZPF2201. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SI2329DS-T1-GE3?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SI2329DS-T1-GE3 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.