SI2319CDS-T1-GE3Alternatives & Equivalent Parts
About SI2319CDS-T1-GE3
SI2319CDS-T1-GE3 is a MOSFET (P-Channel) component manufactured by Vishay. It comes in a SOT23 (3-Pin) package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SI2319CDS-T1-GE3Source | SM6T15CAY | BSS138PW | BZX84C12 | T491A106M020AT | SMAZ10-13-F | 24AA32A-I/MS |
|---|---|---|---|---|---|---|---|
| Manufacturer | Vishay | STMicroelectronics | Nexperia | Diodes Inc. | Kemet | Diodes Inc. | Microchip |
| Package Type | SOT23 (3-Pin) | Diodes Moulded | SOT23 (3-Pin) | Other | Other | Diodes Chip | Small Outline Packages |
| Pin Count | 3 | 2 | 3 | 3 | 2 | 2 | 8 |
| Temperature Range | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | ~ 150.0°C | — | -65.0°C ~ 150.0°C | -40.0°C ~ 85.0°C |
| Price | $0.1836 | $0.1950 | $0.0508 | $0.0028 | $0.1695 | $0.0775 | $0.2700 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | NOT RECOMMENDED | ACTIVE | ACTIVE | OBSOLETE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | |||||||
| Factory Lead Time | 15 Weeks | 53 Weeks, 1 Day | — | — | — | 12 Weeks | 23 Weeks |
| YTEOL | 3 | 7.16 | 6.5 | 0 | — | 7 | 8 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE, 1 CHANNEL | SINGLE WITH BUILT-IN DIODE | SINGLE | — | SINGLE | — |
| DS Breakdown Voltage-Min | 40 V | — | 60 V | — | — | — | — |
| Drain Current-Max (ID) | 4.4 A | — | 0.32 A | — | — | — | — |
| Drain-source On Resistance-Max | 0.077 Ω | — | 1.6 Ω | — | — | — | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | METAL-OXIDE SEMICONDUCTOR | — | — | — | — |
| Feedback Cap-Max (Crss) | 61 pF | — | — | — | — | — | — |
| JEDEC-95 Code | TO-236 | DO-214AA | — | — | — | — | — |
| JESD-30 Code | R-PDSO-G3 | R-PDSO-C2 | R-PDSO-G3 | R-PDSO-G3 | — | R-PDSO-C2 | S-PDSO-G8 |
| JESD-609 Code | e3 | e3 | e3 | e0 | — | e3 | e3 |
| Number of Elements | 1 | 1 | 1 | 1 | — | 1 | — |
| Operating Mode | ENHANCEMENT MODE | — | ENHANCEMENT MODE | — | — | — | SYNCHRONOUS |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | — | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | — | RECTANGULAR | SQUARE |
| Package Style | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | — | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 | — | — | 260 | 260 |
| Polarity/Channel Type | P-CHANNEL | — | N-CHANNEL | — | — | — | — |
| Power Dissipation-Max (Abs) | 2.5 W | — | 0.83 W | — | — | — | — |
| Pulsed Drain Current-Max (IDM) | 20 A | — | — | — | — | — | — |
| Qualification Status | Not Qualified | — | — | Not Qualified | — | Not Qualified | Not Qualified |
| Surface Mount | YES | YES | YES | YES | — | YES | YES |
| Terminal Finish | MATTE TIN | Matte Tin (Sn) | Tin (Sn) | TIN LEAD | — | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal Form | GULL WING | C BEND | GULL WING | GULL WING | — | C BEND | GULL WING |
| Terminal Position | DUAL | DUAL | DUAL | DUAL | — | DUAL | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | 40 | — | — | — | 40 |
| Transistor Application | SWITCHING | — | SWITCHING | — | — | — | — |
| Transistor Element Material | SILICON | — | SILICON | — | — | — | — |
| Turn-off Time-Max (toff) | 47 ns | — | — | — | — | — | — |
| Turn-on Time-Max (ton) | 101 ns | — | — | — | — | — | — |
| Breakdown Voltage-Max | — | 15.8 V | — | — | — | — | — |
| Breakdown Voltage-Min | — | 14.3 V | — | — | — | — | — |
| Breakdown Voltage-Nom | — | 15 V | — | — | — | — | — |
| Clamping Voltage-Max | — | 27.2 V | — | — | — | — | — |
| Diode Element Material | — | SILICON | — | SILICON | — | SILICON | — |
| Diode Type | — | TRANS VOLTAGE SUPPRESSOR DIODE | — | ZENER DIODE | — | ZENER DIODE | — |
| Non-rep Peak Rev Power Dis-Max | — | 600 W | — | — | — | — | — |
| Polarity | — | BIDIRECTIONAL | — | UNIDIRECTIONAL | — | UNIDIRECTIONAL | — |
| Reference Standard | — | AEC-Q101; IEC-61000-4-2, 4-4; MIL-STD-750 | IEC-60134 | — | — | UL RECOGNIZED | — |
| Rep Pk Reverse Voltage-Max | — | 12.8 V | — | — | — | — | — |
| Reverse Current-Max | — | 0.2 µA | — | — | — | 1 µA | — |
| Reverse Test Voltage | — | 12.8 V | — | — | — | 7.6 V | — |
| Technology | — | AVALANCHE | — | ZENER | — | ZENER | CMOS |
| ## SM6T15CAY Alternates Showing results | — | Image | — | — | — | — | — |
| Date Of Intro | — | — | 2017-02-01 | — | — | — | — |
| Additional Feature | — | — | LOGIC LEVEL COMPATIBLE | — | — | HIGH SURGE CAPABILITY | — |
| Pbfree Code | — | — | — | No | — | No | Yes |
| Dynamic Impedance-Max | — | — | — | 25 Ω | — | 4 Ω | — |
| Power Dissipation-Max | — | — | — | 0.33 W | — | 1 W | — |
| Reference Voltage-Nom | — | — | — | 12 V | — | 10 V | — |
| Voltage Tol-Max | — | — | — | 5% | — | 5% | — |
| Working Test Current | — | — | — | 2 mA | — | 50 mA | — |
| Manufacturer Package Code | — | — | — | — | — | SMA | MSOP-8 |
| Forward Voltage-Max (VF) | — | — | — | — | — | 1.2 V | — |
| Knee Impedance-Max | — | — | — | — | — | 200 Ω | — |
| Clock Frequency-Max (fCLK) | — | — | — | — | — | — | 0.1 MHz |
| Data Retention Time-Min | — | — | — | — | — | — | 200 |
| Endurance | — | — | — | — | — | — | 1000000 Write/Erase Cycles |
| I2C Control Byte | — | — | — | — | — | — | 1010DDDR |
| Memory Density | — | — | — | — | — | — | 32768 bit |
| Memory IC Type | — | — | — | — | — | — | EEPROM |
| Memory Width | — | — | — | — | — | — | 8 |
| Number of Functions | — | — | — | — | — | — | 1 |
| Number of Words | — | — | — | — | — | — | 4096 words |
| Number of Words Code | — | — | — | — | — | — | 4000 |
| Organization | — | — | — | — | — | — | 4KX8 |
| Output Characteristics | — | — | — | — | — | — | OPEN-DRAIN |
| Package Equivalence Code | — | — | — | — | — | — | TSSOP8,.19 |
| Parallel/Serial | — | — | — | — | — | — | SERIAL |
| Programming Voltage | — | — | — | — | — | — | 2.5 V |
| Serial Bus Type | — | — | — | — | — | — | I2C |
| Standby Current-Max | — | — | — | — | — | — | 0.000001 A |
| Supply Current-Max | — | — | — | — | — | — | 0.003 mA |
| Supply Voltage-Max (Vsup) | — | — | — | — | — | — | 5.5 V |
| Supply Voltage-Min (Vsup) | — | — | — | — | — | — | 1.7 V |
| Supply Voltage-Nom (Vsup) | — | — | — | — | — | — | 2.5 V |
| Temperature Grade | — | — | — | — | — | — | INDUSTRIAL |
| Terminal Pitch | — | — | — | — | — | — | 0.65 mm |
| Write Cycle Time-Max (tWC) | — | — | — | — | — | — | 5 ms |
| Write Protection | — | — | — | — | — | — | HARDWARE |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 6 alternatives for SI2319CDS-T1-GE3 — response within 24 hours.
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Why Look for Alternatives?
Finding alternatives for SI2319CDS-T1-GE3 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SI2319CDS-T1-GE3 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SI2319CDS-T1-GE3?
Known equivalents for SI2319CDS-T1-GE3 include SM6T15CAY, BSS138PW, BZX84C12. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SI2319CDS-T1-GE3?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SI2319CDS-T1-GE3 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.