SI2314EDS-T1-E3 Vishay MOSFET (N-Channel) (SOT23 (3-Pin)) In Stock
Vishay SI2314EDS-T1-E3 is an N-Channel MOSFET in a compact SOT-23 3-pin package rated at 20 V drain-source breakdown and 3.77 A drain current with 33 mΩ on-resistance. Includes built-in diode and resistor in a single package. Available from stock with worldwide shipping.
- Manufacturer
- Vishay
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SI2314EDS-T1-E3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 20 V drain-source breakdown voltage with 3.77 A maximum drain current in a space-saving SOT-23 3-pin package
- Ultra-low 33 mΩ drain-source on-resistance (RDS(on)) enabling high efficiency switching with minimal conduction losses
- Integrated built-in diode and resistor in a single SOT-23 package, reducing external component count and simplifying PCB layout
Applications
The SI2314EDS-T1-E3 is suited for load switching, battery protection circuits, and power management applications in portable devices and IoT hardware where board space is at a premium. Its 20 V, 3.77 A ratings and 33 mΩ RDS(on) make it effective for low-voltage DC-DC converters and motor driver stages in wearables and handheld instruments. The built-in diode and resistor simplify gate drive circuit design in single-supply 3.3 V and 5 V systems.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 11.25mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 3.77A |
| Drain-source On Resistance-Max | 0.033Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-236 |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.75W |
| Pulsed Drain Current-Max (IDM) | 15A |
| Qualification Status | Not Qualified |
| Reference Standard | IEC-61249-2-21 |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 29000ns |
| Turn-on Time-Max (ton) | 3000ns |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the SI2314EDS-T1-E3 for a 5 V power switch design?
The SI2314EDS-T1-E3 is rated for 20 V drain-source breakdown voltage and 3.77 A maximum drain current, with a drain-source on-resistance of 33 mΩ. At a 5 V rail, these parameters support efficient load switching with less than 0.12 W conduction loss at full rated current, making it suitable for portable device power management.
How does the built-in diode and resistor in SI2314EDS-T1-E3 simplify circuit design?
The integrated built-in diode and resistor eliminate 2 external components that would otherwise be required for gate bias or body diode functions in standard discrete MOSFET circuits. This integration allows a simpler PCB layout in the SOT-23 3-pin footprint, saving approximately 2 mm² of board area in space-constrained designs such as wearables and handheld meters.
When is SI2314EDS-T1-E3 a better fit than a larger SO-8 MOSFET for battery-powered applications?
In battery-powered designs where total current draw stays below 3.77 A and supply voltage does not exceed 20 V, the SI2314EDS-T1-E3 in SOT-23 occupies less than 5 mm² of PCB area versus the roughly 32 mm² needed for an SO-8 package. The 33 mΩ on-resistance ensures acceptable efficiency for standby and light-load conditions common in IoT sensors, making it the preferred choice when minimizing board footprint is the primary constraint.
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